FEATURES
• HIGH ISOLATION VOLTAGE
BV: 5 k Vr.m.s. MIN
• HIGH COLLECTOR TO EMITTER VOLTAGE
VCEO: 300 V MIN
• ULTRA HIGH CURRENT TRANSFER RATIO
CTR: 1000% MIN
• HIGH SPEED SWITCHING
tr,tf = 100 µs TYP
DESCRIPTION
PS2633, PS2633L, PS2634, and PS2634L are optically
coupled isolators containing a GaAs light emitting diode and
an NPN silicon Darlington-connected phototransistor.
PS2633 and PS2634 are in a plastic DIP (Dual In-Line
Package). Ps2633L and PS2634L are lead bending type
(Gull-wing) for surface mount. PS2633 and PS2633L have a
base pin and PS2634 and PS2634L have no base pin.
PS2633
PS2633L
PS2634
PS2634L
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER
VOLTAGE DARLINGTON TYPE
6 PIN OPTOCOUPLER
PART NUMBER PS2633, PS2633L, PS2634, PS2634L
SYMBOLS PARAMETERS UNITS MIN TYP MAX
VFForward Voltage, IF = 10 mA V 1.15 1.4
IRReverse Current, VR = 5 V µA5
C Junction Capacitance, V = 0, f = 1.0 MHz pF 30
ICEO Collector to Emitter Dark Current nA 400
VCE = 300 V, IF = 0
BVCEO Collector to Emitter Breakdown V oltage V 300
IC = 1 mA, IB = 0
BVEBO Emitter to Base Breakdown V oltage1V6
IE = 100 µA, IC = 0
CTR Current Transfer Ratio, IF =1 mA, V CE = 2 V % 1000 4000 15000
VCE(sat) Collector Saturation Voltage, IF =1 mA, IC = 2 mA V 1.0
R1-2 Isolation Resistance, Vin-out = 1.0 k VDC Ω1011
C1-2 Isolation Capacitance, V = 0, f = 1.0 MHz pF 0.6
trRise T ime2, VCC = 5 V, IC = 10 mA µs 100
tfFall T ime2, VCC = 5 V, IC = 10 mA µs 100
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Diode
Coupled Transistor
1. Only PS2633, PS2633L 2. Test Circuit for Switching Time
APPLICATIONS
• TELEPHONE/TELEGRAPH LINE RECEIVER
• POWER SUPPLY
PULSE INPUT
PW = 100 µs
Duty Cycle = 1/10
()
I
F
V
out
R
L
= 100 Ω
50 Ω
1
2
5
4
V
CC
654
123
654
123
PS2633 PS2634PS2634 PS2633
PULSE INPUT
PW = 100 µs
Duty Cycle = 1/10
()
I
F
V
out
R
L
= 100 Ω
50 Ω
1
2
5
4
6
V
CC
California Eastern Laboratories
PS2633, PS2633L, PS2634, PS2634L
SYMBOLS PARAMETERS UNITS RATINGS
Diode
VRReverse Voltage V 6
IFForward Current (DC) mA 80
PDPower Dissipation mW 15 0
IF (Peak) Peak Forward Current A 1
PW = 100 µs, Duty Cycle 1%
Transistor
VCEO Collector to Emitter V oltage V 30 0
VEBO Emitter to Base V oltage2V6
ICCollector Current mA 15 0
PCPower Dissipation mW 30 0
Coupled
BV Isolation V oltage3Vr.m.s. 5000
TSTG Storage T emperature °C -55 to +150
TOP Operating Temperature °C -55 to +100
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Only PS2633, PS2633L
3. AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input
(Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common).
OUTLINE DIMENSIONS (Units in mm)
PS2633, PS2634 PS2633L, PS2634L
10.16 MAX
64
13
φ 1
7.62
6.5
0.9± 0.25
9.60 ± 0.4
0.05 to 0.2
2.54
MAX
1.34 ± 0.10
3.8 MAX
0.25 M
2.54
0.65
64
13
φ 1
2.8 MIN 4.55 MAX
2.54
MAX
0.50 ± 0.10
1.34
3.8
MAX 7.62
6.5
0 to 15˚
10.16 MAX
0.25 M
2.54
PIN CONNECTIONS (Top View)
PS2633, PS2633L PS2634, PS2634L
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. NC
654
123
654
123
TYPICAL PERFORMANCE CUR VES (TA = 25 °C)
DIODE POWER DISSIP A TION
vs. AMBIENT TEMPERA TURE
Diode Power Dissipation, PD (mW)
Ambient Temperature, T A (°C)
Ambient Temperature, T A (°C)
Forward Current, IF (mA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERA TURE
Forward V oltage, VF ( V)
Collector to Emitter Dark Current, ICEO (nA)
FORW ARD CURRENT vs.
FORW ARD VOL T AGE
TRANSISTOR POWER DISSIP ATION
vs. AMBIENT TEMPERA TURE
T ransistor Power Dissipation, PC (mW)
Collector Saturation V oltage, VCE(sat) (V)
Collector Current, IC (mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURA TION VOL T AGE
Collector to Emitter V oltage, VCE (V)
Collector Current, IC (mA)
Ambient T emperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLT AGE
200
150
100
50
0 25 50 75 100
T
A
= 100 ˚C
75 ˚C
50 ˚C 25 ˚C
0 ˚C
-25 ˚C
-55 ˚C
100
10
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6
400
300
200
100
0 25 50 75 100
5.0 mA 4.0 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
I
F
= 0.5 mA
4.5 mA
3.5 mA
4.0 mA
120
100
80
60
40
01234
160
140
20
5678
10 µ
-50 -25 02550
V
CE
= 300 V
1 µ
100 n
10 n
1 n
100 p
75 100
300
00.2 0.40.6 0.8
100
50
10
5
1
1.0 1.2
5.0 mA
2.0 mA
2.0 mA
I
F
= 0.5 mA
0.5
0.1
PS2633, PS2633L, PS2634, PS2634L
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERA TURE
∆CTR, Normalized Output Current
Ambient T emperature, TA (°C)
T ime (HR)
Switching T ime, t (µs)
Load Resistance, RL (Ω)
∆CTR, Normalized
SWITCHING TIME
vs. LOAD RESIST ANCE
CURRENT TRANSFER RATIO (CTR)
vs. FORW ARD CURRENT
Current T ransfer Ratio, CTR (%)
Forward Current, IF (mA)
V oltage Gain, AV (dB)
Frequency , f (kHz)
PS2633, PS2633L, PS2634, PS2634L
Normalized to 1.0
at T
A
= 25 ˚C
I
F
= 1 mA, V
CE
= 2 V
1.2
-50 -25 025 50
1.0
0.8
0.6
0.4
0.2
75 100
0
V
CE
= 2 V
4000
3000
2000
1000
0.1 0.5 1
5000
0510 20
Sample A
Sample B
100
50
10
5
20 50 100
300
1
500 1 k 2 k
V
CC
= 10 V, I
C
= 10 mA
Pulse Width = 5 ms
Duty Cycle = 1/2
t
r
t
d
t
f
t
s
FREQUENCY RESPONSE
V
CE
= 4 V, I
C
= 10 mA
V
IN
= 0.1 V
P-P
1 kΩ
V
IN
1
µF47 ΩV
OUT
R
L
1 kΩ
100 Ω
10 Ω
-5
-10
-15
-20
-25
0.01 0.1 1
0
-30 10 100
CTR DEGRADA TION
I
F
= 1 mA
0.8
0.6
0.4
0.2
0
10 10
2
1.2
1.0
10
3
10
4
10
5
10
6
T
A
= 25 ˚C
T
A
= 60 ˚C
TYPICAL PERFORMANCE CUR VES (TA = 25 °C)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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PRINTED IN USA ON RECYCLED PAPER -3/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE