BYQ28E-200,127"" - NXP SEMICONDUCTORS

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

WWW - For www.nxp.com use www.ween-semi.com

Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com

For the copyright notice at the bottom of each page (or elsewhere in the document, depending

If you have any questions related to this document, please contact our nearest sales office via e-

mail or phone (details via salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

1. Product proﬁle

1.1 General description

Ultrafast, dual common cathode, epitaxial rectiﬁer diodes in a SOT78 (TO-220AB) and a

SOT428 (DPAK) plastic package.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to connect to pin 2 of the SOT428 package.

BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

Rev. 04 — 5 December 2007 Product data sheet

nFast switching nLow thermal resistance

nSoft recovery characteristic nLow forward voltage drop

nReverse surge capability nHigh thermal cycling performance

nOutput rectiﬁers in high-frequency switched-mode power supplies

nVRRM ≤200 V nIO(AV) ≤10 A

nVF≤0.895 V ntrr = 10 ns (typ)

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1 anode 1

SOT78 (3-lead TO-220AB)

SOT428 (DPAK)

2 cathode [1]

3 anode 2

mb mounting base; cathode

sym084

Product data sheet Rev. 04 — 5 December 2007 2 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

3. Ordering information

4. Limiting values

Table 2. Ordering information

Type number Package

Name Description Version

BYQ28E-200 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220AB SOT78

BYQ28ED-200 DPAK plastic single-ended surface-mounted package (DPAK); 3-leads (one lead

cropped) SOT428

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 200 V

VRWM crest working reverse voltage - 200 V

VRreverse voltage square waveform; δ= 1.0 - 200 V

IO(AV) average output current square waveform; δ= 0.5;

Tmb ≤119 °C; both diodes conducting -10A

IFRM repetitive peak forward current tp=25µs; square waveform; δ= 0.5;

Tmb ≤119 °C; per diode -10A

IFSM non-repetitive peak forward

current t = 10 ms; sinusoidal waveform; per

diode -50A

t = 8.3 ms; sinusoidal waveform; per

diode -55A

IRM peak reverse recovery current tp=2µs; δ= 0.001 - 0.2 A

IRSM non-repetitive peak reverse

current tp= 100 µs - 0.2 A

Tstg storage temperature −40 +150 °C

Tjjunction temperature - 150 °C

Electrostatic discharge

VESD electrostatic discharge voltage all pins; human body model;

C = 250 pF; R = 1.5 kΩ-8kV

Product data sheet Rev. 04 — 5 December 2007 3 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

5. Thermal characteristics

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to

mounting base with heatsink compound;

per diode; see Figure 1 - - 4.5 K/W

with heatsink compound;

both diodes conducting --3K/W

Rth(j-a) thermal resistance from junction to ambient in free air; SOT78 - 60 - K/W

SOT428 [1] - 50 - K/W

Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width

001aag979

10−1

10−2

Zth(j-mb)

(K/W)

10−3

tp (s)

10−61 1010−1

10−2

10−510−3

10−4

δ =

Product data sheet Rev. 04 — 5 December 2007 4 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

6. Characteristics

Table 5. Characteristics

= 25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VFforward voltage IF= 5 A; Tj= 150 °C; see Figure 2 - 0.8 0.895 V

IF= 5 A; see Figure 2 - 0.95 1.1 V

IF= 10 A; see Figure 2 - 1.1 1.25 V

IRreverse current VR= 200 V - 2 10 µA

VR= 200 V; Tj= 100 °C - 0.1 0.2 mA

Dynamic characteristics

Qrrecovered charge IF=2AtoV

R≥30 V; dIF/dt=20A/µs;

see Figure 3 - 49nC

trr reverse recovery time ramp recovery; IF= 1 A to VR≥30 V;

dIF/dt = 100 A/µs; see Figure 3 - 1525ns

step recovery; when switched from

IF= 0.5 A to IR= 1 A; measured at

IR= 0.25 A

- 1020ns

IRM peak reverse recovery

current IF=5AtoV

R≥30 V; dIF/dt=50A/µs;

see Figure 3 - 0.5 0.7 A

VFR forward recovery

voltage IF= 1 A; dIF/dt = 10 A/µs; see Figure 4 -1-V

(1) Tj= 150 °C; typical values

(2) Tj= 150 °C; maximum values

(3) Tj=25°C; maximum values

Fig 2. Forward current as a function of forward voltage

001aag978

VF (V)

0 1.51.00.5

(A)

(3)(2)(1)

Product data sheet Rev. 04 — 5 December 2007 5 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

Fig 3. Reverse recovery deﬁnitions Fig 4. Forward recovery deﬁnitions

001aab911

trr

time

100 %

10 %

IFdlF

IRIRM

001aab912

time

VFR

IF(AV) =I

F(RMS) ×√δ a = form factor = IF(RMS) /I

F(AV)

Fig 5. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig 6. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

IF(AV) (A)

08624

001aag976

Ptot

(W)

δ = 1

0.2

0.1

0.5

001aag977

IF(AV) (A)

0642

Ptot

(W)

a = 1.57

2.2

2.8

4.0

1.9

Product data sheet Rev. 04 — 5 December 2007 6 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

7. Package outline

Fig 7. Package outline SOT78 (TO-220AB)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-463-lead TO-220AB

123

0 5 10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

DIMENSIONS (mm are the original dimensions)

UNIT A1b1D1ep

mm 2.54

AbD

cL2

max.

3.0 3.8

3.5

15.0

12.8 3.30

2.79 3.0

2.7 2.6

2.2

0.7

0.4 16.0

15.2

0.9

0.6 1.45

1.00

4.7

4.1 1.40

1.25 6.6

5.9 10.3

9.7

05-03-22

05-10-25

mounting

base

Fig. 8. Package outline DPAK (SOT428)

Product data sheet Rev. 04 — 5 December 2007 7 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

Product data sheet Rev. 04 — 5 December 2007 8 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

8. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BYQ28_SER_E_ED_4 20071205 Product data sheet - BYQ28E_SERIES_3

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Limiting values table: some parameter descriptions amended to conform to latest

standards; IFRM conditions amended; VESD row added.

•Characteristics: Qrr changed to Qr ‘recovered charge’; trr1 and trr2 changed to trr with

‘ramp recovery’ and ‘step recovery’ added to conditions.

BYQ28E_SERIES_3 19981001 Product speciﬁcation - BYQ28E_SERIES_2

BYQ28E_SERIES_2 19980701 Product speciﬁcation - BYQ28E_SERIES_1;

BYQ28EB_SERIES_1

BYQ28E_SERIES_1;

BYQ28EB_SERIES_1 19960801 Product speciﬁcation - -

Product data sheet Rev. 04 — 5 December 2007 9 of 10

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

9.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

10. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors BYQ28 series E and ED

Rectiﬁer diodes ultrafast, rugged

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 5 December 2007

Document identifier: BYQ28_SER_E_ED_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

9.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10