TELEDYNE COMPONENTS ag D Mm B917b02 COOLbS2 2 mm, . T-OT ~ CF VOLTAGE-VARIABLE-CAPACITANCE DIODES CV830 SILICON PASSIVATED thru CV830 Series replaces MV830 Series CV840 GEOMETRY 415 SILICON VOLTAGE-VARIABLE-CAPACITANCE DIODES MECHANICAL DATA ... designed for electronic-tuning applications from 15 to 100 pf. DO-7 PACKAGE @ Guaranteed C; versus Vx Slope e 100% Hermetic-Seat Check Glass Body @ Guaranteed High-Frequency Q e 100% High-Temperature Bake Oumet Leads, Tinned @ Wide Tuning Range @ Solid-State Reliability to Replace Mechanical Tuning Methods | 0.096 +0011 DIA MAXIMUM RATINGS: T. = 25C (UNLESS OTHERWISE NOTED) CASE CAPACITY (| Characteristic Symbol Rating Unit =: 2 TB PE 1 Reverse Voltage Ve 30 Volts 0.265 0.035 Forward Current Ie 250 mA Cathode Device Dissipation @T, = 25C Po 400 mW (widle cotor band) Derate above 25C 2.67 mW /*C Device Dissipation @ Te = 25C Po 2 W 0.020 * 0,002 . , 1.0 MIN, Derate above 25C 13.3 mW/7C Lead Diameter > ~~ MIN Junction Temperature Ty +175 C \ Storage Temperature Range Tyg | 65 to +200 rc All Dimensions in Inches [ELECTRICAL CHARACTERISTICS: T, = 25C (UNLESS OTHERWISE NOTED) SEE NOTES Characteristic All Types Symbol Test Conditions Min Typ Max Unit Reverse Breakdown Voltage BVa bk = 10 pAde 30 _ _ Vde Reverse Voitage Leakage Current Ik Va == 25 Vde _ _ 0.2 u Ade Series Inductance Ls f = 250 me, L = 1/16" _ 5 10 nhy Case Capacitance Cc f=l1mc,Ll 0 _ 0.25 0.3 pf , fod A , . . . . Tt Ge Sage re ng vats gue ot Mert a Device Min Typ Max Min Typ Min Typ Min tp CcVva30 13.5 15.0 16.5 1.8 2.00 30 35 0.32 0.375 i CV831 16.2 18.0 19.8 1.8 2.00 25 30 0.32 0.375 CV832 19.8 22.0 24.2 18 2.10 25 30 0.32 0.40 cv833 24.3 27.0 29,7 1.8 2.10 25 30 0.32 0.40 CV834 29.7 33.0 36.3 1.9 2.12 20 25 0.35 0.41 CV835 35.1 39.0 42.9 19 2.12 20 25 0.35 0.41 CV836 42.3 47.0 517 19 2.15 15 20 0.35 0.415 * CV837 50.4 56.0 61.6 19 2.15 15 20 0.35 0.415 . : CV838 61.2 68.0 74.8 2.0 2.18 15 20 0.375 0.425 cVv839 73.8 82.0 90.2 2.0 2.18 10 i5 0.375 0.425 cvs40 90.0 100.0 110.0 2.0 2.18 10 15 0.375 0.425 PARAMETER TEST METHODS . Ly SE DUCTANCE 5. Q, FIGURE OF MERIT 1 Ls, SERIES INDU cTANG package at 250me using an impedance Q'is calculated by taking the G and C readings of an admittance bridge (Boonton Radio Model 250A RX Meter). L_ tead length. eee eS ons the Pp freq and in the f ig = 22S 2. Ce, CASE CAPACITANCE @ G Cc is measurad on an open package at 1 mc using a capacitance (Booriton Electronics Model 33B1 or equivalent). bridge (Boonton Electronics Model 754 of equivalent), 6. , DIODE CAPACITANCE REVERSE VOLTAGE SLOPE The diode capacitance, Cr (as measured at Va 4 Vde, f= 1 me) is 3. C;, DIODE CAPACITANCE compared to Cr (as measured at Ve 30 Vde, f: 1 me) by the fol- (Cr = Cc & Cy). Cr is measured at 1 mc using a capacitance towing equation which defines a. 1 bridge (Boonton Electronics Model 33AS9 or equivalent). = 28. Gxt) tog C5). 9; log Note that a Cr versus Va law is assumed as shown In the followin: 4. TR, TUNING RATIO equation where Cc is included. a8 tthe ratio of Cr measured at 4 Vde divided by Cr measured at Cr=a . Va 130 4184 E-07TELEDYNE COMPONENTS c6E D Mm 4917bUe CO0bbLS3 y mm T OT-49 CV1006,08,10, 12,14,16 VOLTAGE VARIABLE CAPACITORS Replaces Fairchild FV1006-FV1016, FV1106-FV1116 CV1106,08,10, 12,14,16 LOW LEAKAGE e HIGH Q @ HIGH CAPACITANCE RATIO GEOMETRY 415 Applications: A.F.C. circuits, electronic tuning circuits, filters and voltage-controlled crystal oscillators. ELECTRICAL DATA: ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Low Voltage Series MWV 60 Vv High Voltage Series MWV 100 Vv Forward Current be 250 mA Power Dissipation P 400 mW Operating Temperature TA -65 to +150 c Storage Temperature Tsta -65 - +150 c MECHANICAL DATA 00-7 PACKAGE Glass Body Dumet Leads, Tern | 0.096 * 0.011 {| OIA. CASE CAPACITY il = .25 pt. 0.265 0 035 Cathode (wide color band) 0.020 * 0.002 1 | Lead Diameter at LOMIN All Oimensions tn Inches LOW VOLTAGE SERIES ELECTRICAL SPECIFICATIONS: (Ta = 25 Unless Otherwise Noted) PARAMETER SYMBOL | TEST CONDITIONS MIN. | TYP. | MAX. | UNITS Breakdown Voltage BV in =10uA 65 Vv Reverse Leakage Current ta VA =60V 50 nA Reverse Leakage Current In Va = 60 V Ta = 150C 50 HA Figure of Merit a Va =4Vf=50 MHz 150 250 PARAMETER | SYMBOL TEST CONDITIONS UNITS |CV1006 | CV1008 | CV1010 | CV1012 | CV1014 |cV1016 Nominal _ Capacitance Va 4.0 V, f= 1.0 MHz pF 6.8 10 15 22 33 47 Minimum Capacitance Vr 0.1 V, f = 1.0 MHz (C4) Ratio C1 Va 4.0 V, = 1.0 MHz (Ca) 2.2 2.2 2.2 2.2 2.2 2.2 C4 Minimum Capacitance Va 4.0 V, f = 1.0 MHz (C4) Ratio C4, Va | 60V, f= 1.0 MHz (Ceo) 287 29 7 30) 34 7 31] 34 ot) 6@- TELEDYNE CRYSTALONICS 147 Sherman Street, Cambridge, MA 02440 USA Fel: (617) 494-4670 FAX: 617/547-6419 TWX: 710-320-1496 E-08 134TELEDYNE COMPONENTS 23 D M@ 4917602 OOObbS4 & Mm. HIGH VOLTAGE SERIES -07-19 ELECTRICAL SPECIFICATIONS: (Ta = 25C Unless Otherwise Noted) PARAMETER SYMBOL| TEST CONDITIONS MIN. | TYP. | MAX, | UNITS Breakdown Voltage BV la =10 uA 110 Vv Reverse Leakage Current Ir Vr =100V 4100 oA Reverse Leakage Current In Vr = 100 V, Ta = 150c BA Figure of Merit (Note 1) Q Va =4V f= 50 MHz 150 250 PARAMETER | SYMBOL TEST CONDITIONS UNITS | cV1106 | CV1108 |CV1110 | CV1112 |CV1114 | CV1116 Nominal VA 4.0 V, f= 1.0 MHz pF 6.8 10 15 22 33 47 Capacitance Minimum Capacitance VR 0.1 V, f = 1.0 MHz (C, 4) 2.2 2.2 2.2 2.2 2.2 2.2 | Ratio C4 Va 4.0 V, f = 1.0 MHz (C4) C4 | Minimum | Capacitance Va 4.0 V, f = 1.0 MHz (C4) . | Ratio C4 VR 100 V, f - 1.0 MHz (C190) 3.4 3.6 3.8 3.9 4.0 41 C100 Note (1) Q is measured on a Boonton 33A Admittance Bridge. Part numbers shown have 20% tolerance or +10%, 45%, 2%, and 1% specify part number with A, B, C and D suffixes, respectively. TELEDYNE CRYSTALONICS si ciritsrire ini irsrat sti r0sz0.49e 432 4186 -09 anwee wa anti 8 it TELEDYNE COMPONENTS cdse D 4917b02 OOObbSS & mm T-O1=19 6.8 100 pF 20 VOLTS VOLTAGE-VARIABLE-CAPACITANCE DIODES CV 1620 Series replaces MV 1620 Series CV1620 thru CV1650 GEOMETRY 415 ... epitaxial passivated tuning diodes designed for AFC applications in radio, TV, and general electronic-tuning. @ Maximum Working Voitage of 20 V Excellent Q Factor at High Frequencies 100% Hermetic Sea! Check Solid-State Reliability to Replace Mechanical Tuning Methods MAXIMUM RATINGS: T. = 25C (UNLESS OTHERWISE NOTED) MECHANICAL DATA 00-7 PACKAGE Glass Body Dumet Leads, Terns Charactaristic Symbol Rating Unit Reverse Voltage Va 20 Volts a 0.096 Fo Forward Current te 250 mA CASE CAPACITY Device Dissipation @ Ta - 28C Po 400 mW * 25. Derate above 25C 2.67 mw/c __~ 0.265 + 0.035 PMherate above 26 Pe 13.3 mWic tout ee ne Junction Temperature Ts +175 C Storage Temperature Range Thtg -65 to 4200 Cc 2.020 0002 ede ban. ELECTRICAL CHARACTERISTICS: 1, 25C (UNLESS OTHERWISE NOTED) { Characteristic All Types Test Conditions Symbol} Min} Typ | Max | Unit All Dimensions in Inches Reverse Breakdown Voltage ta = 10 pAde BYs 20] | | Vde Reverse Voltage Leakage Current Va = 15 Vde h }| ~] 0.1 Fedde Serles Inductance f + 260 MHz, lead length = 1/16 Ls 1]5.0] to | nH Cas Capacitance f ~ 1 MHz, fead tength = 1/16 Cc |0.25} 0.3 | pF pr Dade capacitance a, yiure of we TR, ve ate Device pF f = 50 MHz f = 1 MHz Mia Mom Max Min Min Max cv1620 6.1 68 75 300 2.0 3.2 CV1622 74 8.2, 9.0 300 2.0 3.2 CV1624 9.0 10.0 11.0 300 2.0 3.2 CV1626 10.8 12.0 13.2 300 2.0 3.2 cv1628 13.5 15.0 16.5 250 2.0 3.2 CV1630 16.2 18.0 19.8 250 2.0 3.2 CV1632 18.0 20.0 22.0 250 2.0 3.2 CV1634 19.8 22.0 24,2 250 2.0 3.2 CV1636 24.3 27.0 29.7 200 2.0 3.2 CV1638 29,7 33.0 36.3 200 2.0 3.2 cv1640 35.1 39.0 42.9 200 2.0 3.2 CVv1642 42.3 47.0 51.7 200 2.0 3.2 CVv1644 50.4 56.0 61.6 150 2.0 3.2 CV1646 61.2 68.0 74.8 150 2.0 3.2 Cv1648 73.8 82.0 90.2 150 2.0 3.2 CV1650 90.0 100.0 110.0 150 2.0 3.2 TR, Tuning Ratio, is the ratio of C; measured at 2 Vde divided by C: measured at 20 Vdc. TELEDYNE CRYSTALONICS 147 Sherman Sireet, Cambridge, MA 02440 USA Tel: (617) 494-4670 FAX: 617/547-6149 TWX: 740-320-1196 41 t- 87. =10 4335 TELEDYNE COMPONENTS VOLTAGE-VARIABLE-CAPACITANCE DIODES 120-330 pF 20/15 VOLTS CV 1652 Series replaces MV 1652 Series 26 D mM 8447602 OOObbSL T TOT CV1652 thru CV1666 ... @pitaxial passivated tuning dicdes designed for general tuning, trimming and AFC GEOMETRY 415 applications at low radio frequencies. @ Standard Capacitance Values to 330 pF @ Solid-State Reliability to Replace Mechanical Tuning Methads 100% Hermetic Seal Check @ Maximum Working Voltage of 20 Y e Excellent Q Factor at High Frequencies MAXIMUM RATINGS =T- Rating symbol | CVIGS2/ | EVIEE2/ | unit 7h un Gvieso | CVv1G86 Reverse Voltage Ve 20 15 Vde { Forward Current fr 400 mAdec 25 7 * MAX "OX Total Device Disipation @Ta~ 25C | Fe 5 | ath more | Junction Temperature Ts 175 C y-~ Storage Temperature Range Tits ~65to +200 C Ola MAY VARY TO attow 2 hy FOR LEAD FINISH ANO OTHER IRAEGULARITIES eae 1.00 MIN ELECTRICAL CHARACTERISTICS: T, ~ 25C (UNLESS OTHERWISE NOTED) All Dimensions in Inches Characteristic Symbol | Mia | Typ | Max Unit Reverse Breakdown Voltage BVr Vde [ a_] 8] tow a ind ES the YEE Bl =/= Car aaa Reverse Current In Adc Wa = 18 veo CV1652 thru CV1660 ~~ _ 0.1 Wa= dc) CV1662 thru CV1666 =_ _ 01 Series inductance CV1652 thru CV 1666 us - 50 | nH ,, Diode Capacitance Q, Figure of Merit Capacitance Ratio Device Ve = 4.0 Vde, f = 1.0 MHz Yn 40 Vide, C2/C20 Min Nom Max f = 20 Miz Typical CV1652 108 120 135 250 2.6 CV1654 132 150 165 250 2.6 CV1656 162 180 198 200 2.6 CV1658 180 200 220 200 2.6 CV1660 198 220 242 150 2.6 C2/Cis CV1662 225 250 275 150 2.3 CV1664 243 270 300 100 2.3 tee CV1666 297 330 363 100 2.3 PARAMETER TEST METHODS 1, bs, SERIES INDUCTANCE Ls, is determined from the self resonant frequency and the junctian capacity of the device. 1 bs= 02 a! 2. Cs, DIODE CAPACITANCE (Cr = Cc + Ci. Cr is measured at 1.0 MHz using a capacitance bridge iBoonten Electronics Model 75A or equivalent). 3. TR, TUNING RATIO TR is the ratio of Cr d at 2.0 Vde divided by Cr d at 20 Vde or at 15 Vde. 3 to uteutaved by ta taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: 2nfc Q - 2nfC {Boonton Electronics Model 3381 with range extender or equivalent), 434 4188 E-11