19-1252; Rev 0; 7/97 General Description The MAX4565/MAX4566/MAX4567 are low-voltage T-switches designed for switching RF and video signals from DC to 350MHz in 50Q and 75Q systems. The MAX4565 contains four normally open single-pole/single- throw (SPST) switches. The MAX4566 contains two dual SPST switches (one normally open, one normaily closed.) The MAX4567 contains two single-pole/double-throw (SPDT) switches. Each switch is constructed. ina T configuration, ensuring excellent high-frequency off isolation and crosstalk of -83d0B at 10Mrz. They can handle Rail-to-Rail@ analog sig- nals in either direction. On-resistance (609 max) is matched between switches to 2.59 max and is flat (2Q max) over the specified signal range, using +5V supplies. The off leakage current is less than 5nA at +25C and 50nA at +85C. These CMOS switches can operate with duat power sup- plies ranging from #2.7V to +6V or a single supply between +2.7V and +12V. Ail digital inputs have 0.8V/2.4V logic thresholds, ensuring both TTL- and CMOS-logic com- patibility when using +5V or a single +5V supply. Applications RF Switching Video Signal Routing High-Speed Data Acquisition Test Equipment ATE Equipment MA AXiIMA Quad/Dual, Low-Voltage, _ Bidirectional RF/Video Switches Features High 50 Off isolation: -83dB at 10MHz Low 500 Crosstalk: -87dB at 10MHz DC to 350MHz -3dB Signal Bandwidth 602 Signal Paths with +5V Supplies 2.5Q Signal-Path Matching with =5V Supplies 22 Signal-Path Flatness with +5V Supplies Low 50Q Insertion Loss: 2.5dB at 100MHz +2.7V to +6V Dual Supplies +2.7V to +12V Single Supply @ Low Power Consumption: <1pW # Rail-to-Rail Bidirectional Signal Handling # Pin Compatible with Industry-Standard DG540, DG542, DG643 # >2kV ESD Protection per Method 3015.7 * TTL/CMOS-Compatible Inputs ?+-fete with Single +5V or +5V Ordering Information PART TEMP. RANGE PIN-PACKAGE MAX4565CPP OC to +70C 20 Plastic DIP MAX4565C WP OC to +70C 20 Wide SO Ordering information continued at end of data sheet. Networkin 9 Pin Configurations/Functional Diagrams/Truth Tables TOP VIEW MAAXMIAA AAAXLAA wifte p> <}4a)] ne MAX4566 MAXA567 com [2 SK o~[15] come | 4 nor [3] 8] ane mitt Z2000V Continuous Power Dissipatio: 16-Pin Plastic DIP (derate 10. 53mWPC above +70C) eects 842mW 16-Pin Narrow SO (derate 8.70MW/C above +70C) ek cceecee 16-Pin QSOP (derate 8.3mW/C above +70C).......... 20-Pin Plastic DIP (derate 8.OmW/C above +70C) ... 20-Pin Wide SO (derate 10.00mW/C above +70C) .. 800mW 20-Pin SSOP (derate 8.0mWPC above +70C) .......... 640mWw Operating Temperature Ranges MAX456_C_ Eo ce ccccescer sersescenesesenseseerenes OC to +70C MAX456_E_ E -40C to +85C Storage Temperature Range............ -65C to +150C Lead Temperature (soldering, 10sec)... ee +300C Note 1: Voltages on all other pins exceeding V+ or V- are clamped by internal diodes. Limit forward diode current to maximum cur- rent rating Stresses beyond thase listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICSDual Supplies (V+ = +4.5V to +5,5V, V- = -4.5V to -5.5V, Vin, = 0.8V, ViNH = 2.4V. VaND_ = OV, Ta = Tain to TMax, unless otherwise noted. Typical values are at Ta = +25C.) PARAMETER SYMBOL CONDITIONS Ta MIN Note 2) MAX | units ANALOG SWITCH . Vcoom_. Analog Signal Range VNO_VNC. (Note 3) CE Vv V+ V . . V+ = 4.5V, V- = -4.5V, +25C 46 60 Signal-Path On-Resistance Ron Voom. = 2V, Icom, = 10mA CE 80 Q Signal-Path On-Resistance Match ARON V+ = 4.5V, V- = -4.5V, +26C 1 2.5 a Between Channels (Note 4) 0 Voom_= 2V, Icom_ = 10mA CE 3 Signal-Path On-Resistance V+ = 5V; V- = -5V; Voom_ = 1V, > Flatness (Note 5) RELATION) | ov. -4V: Icom = 10mA +25C 03 2 a NO_, NC_ Off Leakage Current INO_(OFF). | V+ = 5.5V, V- = -6.5V, +26C -1 0.02 1 nA {Nate 6) INC_(OFF) | VCOM_ = #4.5V, VN_=#4.5V CE -10 1c COM_ Off Leakage Current V+ = 5.5V, V- = -5.5V, +25C 4 0.02 1 A (Note 6) ICOM(OFF) | Voy = 4.5V, Vn_ =*4.5V GE | 10 7 |" COM_ On Leakage Current V+ = 5.5V, V- = -5.5V, +26C -2 0.04 2 nA (Note 6) ICOM{ON) | Vogy_ = +4.5V CE -20 20 LOGIC INPUT IN_ Input Logic Threshold High VINLH CLE 15 2.4 Vv IN_ Input Logic Thrashald Low VIN C,E 0.8 15 Vv Ne input Current Logic High or tinei.. line. | Vin. = 0.8V or 2.4V CE 4 0.03 1 pA 1-94 MAAXIAAELECTRICAL CHARACTERISTICSDual Supplies (continued) Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches (V+ = +4.5V to +5.5V, V- = -4.5V fo -5.5V, Vint = 0.8V, Vin = 2.4V, Von. = OV, Ta = TINn to Tmax, unless otherwise noted. Typical values are at TA = +25C.) TYP MAX MAAKIAN PARAMETER SYMBOL CONDITIONS Ta (Note 2) UNITS SWITCH DYNAMIC CHARACTERISTICS ont Voom. = +3V, V+ = 5V, V- = -5V, [| +25C 75 150 Turn-On Time ton Figure 3 CE 200 ns . . Voom, = 3V. V+ = 5V, V- = -5V, | +26C 30 400 Turn-Off Time {OFF Figure 3 CE 130 ns Break-Before-Make Time Delay VooM_ = 23V, V+ = SV, V- = -5V, (MAX4566/MAX4567 only) 'BBM | Figure 4 +25C 5 30 ns Charge Injection CL = 1.0nF, Vn. = OV, Rg = 02, o (Note 3) Q | Figure +25C 25 80 | pe NO_. NC_ Off Capacitance Cn_(OFF) | VNO_ = GND, f= 1MHz, Figure 7 | +25C 25 pF Voom, = OV. COM_ Off Capacitance Ccom_ore)| f= 1MHz, MAX4565, |, 259G 25 oF : MAX4566 Figure 7 Vy v ov MAX4565 6 F COM_ = YNO_ = UV, a, COM_ On Capacitance CCOM_{(ON) f = 1MHz, Figure 7 MAX4566 +25C 6 pF MAX4567 7 R, = 500, MAX4565 83 Off tsotation (Note 7) Viso Vcom_ = 1VRMS. MAX4566 425C -82 dB f = 10MHz, Figure 6 MAX4567 -Ba RL = 502, Voom. = MAX4565 -92 Nowa) ene Crosstalk Ver | 1Vems. f= 10MH2, [MAX4566 | +25C 85 dB Figure 6 MAX4567 87 -3dB Bandwidth (Note 9) Bw Figure 6, Ri, = S09 +25C 350 MHz . . Vin = 5Vp-p, f < 20kHz, 3 Distortion THD+N 00Q in and out +26C 0.02 % POWER SUPPLY Power-Supply Range V+, V- CE -6 +6 Vv V+ Supply C V+ = 5.5V, all Vin, = OV or V. waste | 10.08 ; A + Supply Current + += 5.5V, all VIN, = r Ve GE 40 70 Ws +26C -4 0.05 1 - trent - = 8, A V - Supply Curren | V- = -5.5V CE t0 10 b 1-95 LOSPXVW/99SPXVW/SOSPXUWQuad/Dual, Low-Voltage, Bidirectional RF/Video Switches ELECTRICAL CHARACTERISTICSSingle +5V Supply (V+ = +4.5V to +5.5V, V- = OV, Vint = 0.8V, VinH = 2.4V, Vanb_ = OV, Ta = Tain to TMax, unless otherwise noted. Typical values are at Ta = +25C.) MAX4565/MAX4566/MAX4567 PARAMETER SYMBOL CONDITIONS Ta MIN Woe 2) MAX | units ANALOG SWITCH . Vcom_. 5 Analog Signal Range VNO., VNC. (Note 3) 425C 0 V+ Vv . V+ = 4.5V, Voom. = 3.5V, 425C 68 120) Signal-Path On-Resistance Ron Icom, = 1mA CE 150 Q Signal-Path On-Resistance AR V+ = 4.5V, Voom. = 3.5V, +26C 2 5 Match ON | Icom. = mA CE 2 NO_, NC_ Off Leakage Current INO_(OFF). | V+ = 5.5V, Vcom_ = 1V, +25C -1 1 aA (Notes 6, 10) INC_(OFF) | VN_ = 4.5V C.E -10 10 COM_, Off Leakage Current V+ = 5.5V, Voom. = 1V. +25C -1 1 (Notes 6, 10) ICOMOFF) | vy = 4. 5V CE 6 To 1 OTA COM_ On Leakage Current , _ , _ +25C -2 2 (Notes 6, 10) icom_(ON) | V+ = 5.5V; Voom_ = 1V, 4.5V CE 30 0 nA LOGIC INPUT IN_ Input Logic Threshold High VIN_H CE 1 24 Vv IN_ Input Logic Threshold Low VIN_L CLE 0.8 15 v Ne Input Current Logic High or yas tn | vin, = 0.8V or 2.4V CE 4 0001 4 uA SWITCH DYNAMIC CHARACTERISTICS - Voom. = 3V, V+ = 5V, +26C 130 200 Turn-On Time ton Figure 3 CE 350 ns i Voom, = 3V, V+ = 5V, 425C 30 120 Turn-Off Time tOFF Figure 3 C.E 150 ne Break-Before-Make Time Delay Voom. = 3V, V+ = SV, nee, 4 (MAX4566/MAX4567 only) (BBM | Figure 4 +25C a 9 ns , ae Cu = 1.0nF, Vno = 2.5V, Charge injection Q Rg = 00, Figure 5 +26C 7 25 pc cant Re = S09, f = 10MHz, noe Vigo Voom. = 1VaMs, +26C -81 dB (Note 7) Figure 6 Ry = 608, f = 10MHz, Spanner to-Channe! Crosstalk Vet Voom. = 1VAMS, 425C 86 aB (Note 8) Figure 6 -3dB Bandwidth (Note 9) BW Ry = 502, Figure 6 426C 320 MHz POWER SUPPLY | V+ = 5.5V, all Vin, = OVor V se6'e ft .08 ' A V+ Supply Current + + = 0.0V, aH VIN = OV oF VF CE 40 10 r 1-96 MAAXLMELECTRICAL CHARACTERISTICSSingle +3V Supply Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches (V+ = +2.7V to +3.6V, V- = OV, Vine = 0.8V, VINH = 2.4V, VaND_ = OV, Ta = TMIN to Tmax, unless otherwise noted. Typical values are at Ta = +25C.) PARAMETER SYMBOL CONDITIONS Ta MIN ! Note 2) MAX | untrs ANALOG SWITCH . Vcom_. Anatog Signal Range Vo. VNC. (Note 3} +25C 0 V+ v . . V+ =2.7V, Voom. = 1V, +26C 150 350 + ~ i R - Signal-Path On-Resistance ON Icom. = imA CE 450 Q LOGIC INPUT IN_ Input Logic Threshoid High VINLH (Note 3} C,E 1.0 2.4 v IN_ input Logic Threshold Low VIN_L (Note 3) CE 0.8 1.0 Vv ee input Current Logic High or jin tn | Vin. = 0.8V or 2.4V (Note 3) CE 4 { yA SWITCH DYNAMIC CHARACTERISTICS (Note 3) . . Voom_ = 1.5V, V+ =2.7V, 425C 270 500 Turn-On Time ton Figure 3 (Note 3) CE B00 ns . Voom, = 1.5V, V+ = 2.7V, +25C 40 100 Turn-Off Time {OFF Figure 3 (Note 3) CE 120 ns Break-Before-Make Time Delay Voom_ = 1.5V, V+ = 2.7V, e (MAX4566/MAX4567 only) BEM | Figure 4 (Note 3) 25C | 10 120 ns POWER SUPPLY 25 -1 0 1 V+ Supply Current 1+ V+ = 3.6V, ali VIN, = OV or V+ = 6 B08 10 pA Note 2: Note 3: Note 4: Note 5: sured over the specified analog signal range. Note 6: Note 7: Note 8: Note 9: The algebraic convention is used in this data sheet; the most negative vaiue is shown in the minimum cclumn. Guaranteed by des:gn. ARON = ARON(MAX) - ARON(MIN}- Resistance flatness is defined as the difference between the maximum and the minimum value of on-resistance as mea- Leakage parameters are 100% tested at the maximum rated hot temperature and guaranteed by correlation at +25C. Off isolation = 20!og10 [Voom / (VNC oF VNO)}, Vcom = output, VNc or VNo = input to off switch Batween any two switches. -3dB bandwidth is measured relative ta 100kHz. Note 10: Leakage testing for single-supply operation is guaranteed by testing with dua! supplies. 1-97 MAAXIMM LOSUXVW/99SPXVW/SOSPXUWMAX4565/MAX4566/MAX4567 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Typical Operating Characteristics (Vt = +5V, V- = -5V. Ta = +25C, GND = OV, packages are surface mount, unless otherwise noted.) ON-RESISTANCE vs. Voom ON RESISTANCE vs. Veom ON RESISTANCE vs. Veom AND TEMPERATURE (DUAL SUPPLIES) (SINGLE SUPPLY) (QUAL SUPPLIES) 1000 1000 65 Ve=t2, ; Yea ADV 56 = +425C Vee 27V, Ve =2V, 45 C a Ven -27 Vee -2 e ze za 100 106 2 35 25 15 10 10 5 4-32-76 $ 2034~5 6 { 2 3 4 5 6 7 8 9 10 Vcow (V) Veem (V) Von () ON-RESISTANCE vs, Vcom AND TEMPERATURE ON/OFF-LEAKAGE CURRENT vs. (SINGLE SUPPLY) TEMPERATURE CHARGE INJECTION vs. Voom 430 10 ] 7 4 60 | Ai 110 1 a : * | 40 " = a ON LEAKAGE | 4A _ DUAL $ a g x SUPPLIES = 3 , 3 z= 70 3 OFF LEAKAGE o * Tae 5 0.01 Ld 20 50 Wa SINGLE Ta = 85C A 10 SUPPLY. 0.001 30 W/) 0 0.0001 -10 6 05 10 15 20 25 30 35 40 45 50 75 -86 25 0 25 50 78 100 125 Veow (V) TEMPERATURE (C) ON/OFF TIME vs. ON/OFF TIME s. SUPPLY VOLTAGE TEMPERATURE 110 1 8 o4 4 3 90 ; AA 80 b Y, 2 z 2 00 Zn z B 7 zo ie are te Y "| = = 6 = YA 3 2 5 = 0.001 yA tore Y, 40 A 1 KL 30 tore 0001 TZ 20 ~~ 16 0.00001 i 715 -S0 +25 0 62 SO 75 100 125 715 -50 -26 9 25 50 75 100 125 V+, - () TEMPERATURE (C} TEMPERATURE (C} 1-98 MAAXLAAQuad/Dual, Low-Voltage, Bidirectional RF/Video Switches Typical Operating Characteristics (continued) (V+ = +5V, V- = -5V, Ta = +25C, GND = OV, packages are surface mount, unless otherwise noted.) MAX4567 LOGIC-LEVEL THRESHOLD VOLTAGE s. TOTAL HARMONIC DISTORTION V+ SUPPLY VOLTAGE vs. FREQUENCY 3.0 100 V4 = 45V z V- = -5V = 28 = SIGNAL = 5Vp-p 8 & 10 & BOC INAND OUT 2 20 S pe Q a oO = 45 21 z & a z 2 14 < g Z 01 05 = 0 001 10 100 tk 10k 100k FREQUENCY (H2} MAX4566 FREQUENCY RESPONSE 0 0 60 -10 10 50 a HANNE * _ ADJACENT B x CROSSTALK | S -10 g ~40 & B -50 1 on/paase: i B50 0 & 2 3 Bo 0 8 2 0 2 ~ 773 oS B30 S 80 -2 -%0 4 90 30 -100 CHANNEL TH -100 CHANNEL 40 110 CROSSTALK ~ 110 50 120 : 120 -60 1 10 100 1000 o1 1 10 100 1000 FREQUENCY (MHz) FREQUENCY (MHz) MAX4567 FREQUENCY RESPONSE 0 100 10 80 20 60 e 0 40 i gQ 40 a 8 8 a 2 0 wy E - -20 Fa 7 1g 0 3 ~60 -80 -100 1 10 100 1000 FREQUENCY (MHz) MA AXIMA 1-99 LOSPXVW/99SPXVW/SOSPXUWMAX4565/MAX4566/MAX4567 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Pin Description PIN NAME FUNCTION* MAX4565 | MAX4566 | MAX4567 OD ' 1, 16 1,9 INL Digital Control Input #8852 [arta1| aes 14] ano. | Bagctone Goud Ground ae no veraly comected each oe 16 12 7,15 Ve Positive Supply-Voltage Input (analog and digital) 5 5 3.11 V- Negative Supply-Veltage Input. Connect to ground plane for single-supply operation. 4,7, 14, 17 4,13 2,16 NO_ Analog Switch Normally Open** Terminals _ 6,14 8, 10 NC_ Analog Switch Normally Closed** Terminals 2,9,12,19 ] 2,8,9, 15 , 13 COM_ Analog Switch Common** Terminals * All pins have ESD diodes to V- and V+. ** NO_ (or NC_) and COM_ pins are identical and interchangeabie. Either may be considered as an input or output; signals pass equally well in either direction. Theory of Operation The MAX4565/MAX4566/MAX4567 are high-frequency T switches. Each T switch consists of two series CMOS switches, with a third N-channel switch at the junction that shunts capacitively-coupled signals to ground when the series switches are off. This produces superior high-frequency signal isolation when the switch is turned off. Logic-Levei Translators Tne MAX4565/MAX4566/MAX4567 are constructed as high-frequency T switches, as shown in Figure 1. The Jogic-level input, IN_, is translated by amplifier Ai into a V+ to V- logic signal that drives amplifier A2. (Amplifier A2 is an inverter for normally closed switches.) Amplifier A2 drives the gates of N-channel MOSFETs Ni and N2 from V+ to V-, turning them fully on or off. The same signal drives inverter A3 (which drives the P-channel MOSFETs P1 and P2) from V+ to V-, turning them fully on or off, and drives the N-channel MOSFET N3 off and on. The logic-level threshold is determined by V+ and GND_. The voltage on GND_ is usually at ground potential, but it may be set to any voltage between (V+ - 2V) and V-. When the voltage between V+ and GND_ is less than 2V, the level transiators become very slow and unreliable. Since individual switches in each package have individual GND_ pins, they may be set to different voltages. Normally, however, they should all be connected to the ground plane. 1-700 NORMALLY OPEN SWITCH CONSTRUCTION Nt Ne 2 No pl is ots - IN_ | COM_-NO_ Pp 1 0] OFF si fo fs D 1 ON \ mw 1 ES DIODES (ney ON GND. INL, + COM_,NO_"ANDNG., t i Figure 1, T-Switch Construction Switch On Condition When the switch is on, MOSFETs N1, N2, P1, and P2 are on and MOSFET N3 is off. The signal path is COM_ to NO_, and because both N-channel! and P-channel MOSFETs act as pure resistances, it is symmetrical (i... signals may pass in either direction). The off MOSFET, N3, has no DC conduction, but has a small PRAXLMAQuad/Dual, Low-Voltage, Bidirectional RF/Video Switches amount of capacitance to GND_. The four on MOSFETs also have capacitance to ground that, together with the series resistance, forms a lowpass fil- ter, All of these capacitances are distributed evenly along the series resistance, so they act as a transmis- sion line rather than a simple R-C filter. This helps to explain the exceptional 350MHz bandwidth when the switches are on. Typical attenuation in 500 systems is -2.5dB8 and is reasonably flat up to 300MHz. Higher-impedance cir- cuits show even fower attenuation (and vice versa), but slightly lower bandwidth due to the increased effect of the internal and external capacitance and the switchs internal resistance. The MAX4565/MAX4566/MAX4567 are optimized for +5V operation. Using lower supply voltages or a single supply increases switching time, increases on-resis- tance (and therefore on-state attenuation), and increas- es nontinearity. Switch Off Condition When the switch is off, MOSFETs Nt, N2, Pi, and P2 are off and MOSFET N@ is on. The signal path is through the off-capacitances of the series MOSFETs, but it is shunted to ground by N3. This forms a high- pass filter whose exact characteristics are dependent on the source and load impedances. In 509 systems, and below 10MHz, the attenuation can exceed 80dB. This value decreases. with increasing frequency and increasing circuit impedances. External capacitance and board layout have a major role in determining over- all performance. Applications Information Power-Supply Considerations Overview The MAX4565/MAX4566/MAX4567 construction is typi- cal of rnost CMOS analog switches. It has three supply pins: V+, V-, and GND. V+ and V- are used to drive the internal CMOS switches and set the limits of the analog voltage on any switch. Reverse ESD protection diodes are internally connected between each analog signal pin and both V+ and V-. If the voltage on any pin exceeds V+ or V-, one of these diodes will conduct. During normal operation these reverse-biased ESD diodes leak, forming the only current drawn from V-. Virtually all the analog leakage current is through the ESD diodes. Although the ESD diodes on a given sig- nal pin are identical, and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or V- and the analog signal. This means their PAAKXILM leakages vary as the signal varies. The difference in the two diode leakages from the signal path to the V+ and V- pins constitutes the analog signal-path leakage cur- rent. All analog leakage current flows to the supply ter- minals, not to the other switch terminal. This explains how both sides of a given switch can show leakage currents of either the same or opposite polarity. There is no connection between the analog signai paths and GND. The analog signal paths consist of an N-channel and P-channel MOSFET with their sources and drains paralfeled and their gates driven out of phase with V+ and V- by the logic-level transtators. V+ and GND power the internal logic and logic-level translators, and set the input logic thresholds. The logic-level translators convert the logic levels to switched V+ and V- signals to drive the gates of the analog switches. This drive signal is the oniy connec- tion between the logic supplies and the analog sup- plies. Ail pins have ESD protection to V+ and to V-. Increasing V- has no effect on the fogic-level thresh- olds, but it does increase the drive to the P-channel switches, reducing their on-resistance. V- also sets the negative limit of the analog signal voltage. The logic-level thresholds are CMOS and TTL compati- ble when V+ is +5V. As V+ is raised, the threshold increases slightly; when V+ reaches +12V, the Jevel threshold is about 3.1V, which is above the TTL output high-level minimum of 2.8V, but still compatible with CMOS outputs. Bipolar-Supply Operation The MAX4565/MAX4566/MAX4567 operate with bipolar supplies between +#2.7V and +6V. The V+ and V- sup- plies need not be symmetrical, but their sum cannot exceed the absolute maximum rating of 13.0V. Do not connect the MAX4565/MAX4566/MAX4567 V+ pin to +3V and connect the logic-ievel input pins to TTL jogic-level signals. TTL logic-level outputs can exceed the absolute maximum ratings, causing damage to the part and/or external circuits. CAUTION: The absolute maximum V+ to V- differential voltage is 13.0V. Typical 26-Voit or 12-Voit supplies with 10% tolerances can be as high ag 13.2V. This voltage can damage the MAX4565/MAX4566/MAX4567. Even +5% toler- ance supplies may have overshoot or noise spikes that exceed 13.0V. 1-101 LOSPUXVW/99SPXVW/S9OSPXUNMAX4565/MAX4566/MAX4567 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Single-Supply Operation The MAX4565/MAX4566/MAX4567 operate frorn a sin- gle supply between +2.7V and +12V when V- is con- nected to GND. All of the bipolar precautions must be observed. Note, however, that these parts are opti- mized for +5V operation, and most AC and DC charac- teristics are degraded significantly when departing from +5V. As the overall supply voltage (V+ to V-) is lowered, switching speed, on-resistance, off isolation, and distortion are degraded. (See Typical Operating Characteristics.) Single-supply operation also limits signal levels and interferes with grounded signals. When V- = OV, AC sig- nals are limited to -0.3V. Voltages below -0.3V can be clipped by the internal ESD-protection diodes, and the parts can be damaged if excessive current flows. Power Off When power to the MAX4565/MAX4566/MAX4567 is off (i.e., V+ = OV and V- = OV), the Absolute Maximum Ratings still apply. This means that neither logic-level inputs on IN_ nor signals on COM_, NO_, or NC_ can exceed +0.3V. Voltages beyond +0.3V cause the inter- nal ESD-protection diodes to conduct, and the parts can be damaged if excessive current flows. Grounding DC Ground Considerations Satisfactory high-frequency operation requires that careful consideration be given to grounding. For most applications, a ground plane is strongly recom- mended, and all GND_ pins should be connected to it with solid copper. While the V+ and V- power-supply pins are common to ail switches in a given package, each switch has separate ground pins that are not internally connected to each other. This contributes to the overall high-frequency performance and provides added flexibility in some applications, but it can cause problems if it is overlooked. All the GND_ pins have ESD diodes to V+ and V-. in systems that have separate digital and analog {sig- nal) grounds, connect these switch GND_ pins to ana- fog ground. Preserving a good signal ground is much more important than preserving a digital ground. The logic-level inputs, IN_, have voltage thresholds determined by V+ and GND_. (V- does not influence the logic-level threshold.) With +5V and OV applied to V+ and GND_, the threshold is about 1.6V, ensuring compatibility with TTL- and CMOS-logic drivers. The various GND_ pins can be connected to separate voltage potentials if any or all of the logic-level inputs is 1-102 not a normal logic signal. (The GND_ voltages cannot exceed (V+ - 2V) or V-.) Elevating GND_ reduces off isolation. For example, using the MAX4565, if GND2- GND6 are connected to OV and GND1 is connected to V-, then switches 2, 3, and 4 would be TTL/CMOS com- patible, but switch 1 (IN1} could be driven with the rail- to-rail output of an op amp operating from V+ and V-. Note, however, that IN_ can be driven more negative than GND_, as far as V-. GND_ does not have to be removed fram OV when IN_ is driven from bipolar sources, but the voltage on IN_ should never exceed V-. GND_ should be separated from OV only if the lagic- level threshold has to be changed. Any GND_ pin not connected to OV should be bypassed to the ground plane with a surface-mount 10nF capacitor to maintain good RF grounding. DC current in the IN_ and GND_ pins is less than 1nA, but increases with switching frequency. On the MAX4565 only, two extra ground pinsGND5 and GND6are provided te improve isolation and crosstalk. They are not connected to the logic-level cir- cuit. These pins should always be connected to the ground plane with solid copper. AC Ground and Bypassing A ground plane is mandatory for satisfactory high- frequency operation. (Prototyping using hand wiring or wire-wrap boards is strongly discouraged.) Connect all OV GND_ pins to the ground plane with solid copper. (The GND_ pins extend the high-frequency ground through the package wire-frame, into the silicon itself, thus improving isolation.) The ground plane should be salid metal underneath the device, without interruptions. There should be no traces under the device itself. For DIP packages, this applies to both sides of a two- sided board. Failure to observe this will have a minimai effect on the on characteristics of the switch at high frequencies, but it will degrade the off isclation and crosstalk. Bypass all V+ and V- pins to the ground piane with sur- face-mount 10nF capacitors. For DIP packages, mount the capacitors as close as possible to the pins on the same side of the board as the device. Do not use feedthroughs or vias for bypass capacitors. For surface-mount packages, bypass capacitors should be mounted on the opposite side of the board from the device. In this case, use short feedthroughs or vias, directly under the V+ and V- pins. Any GND_ pin not connected to OV should be similarly bypassed. If V- is OV, connect it directly to the ground plane with solid copper. Keep all leads short. MAAXIMThe MAX4567 has two V+ and two V- pins. Make DC connections to only one of each to minimize crosstalk. Do not route DC current into one of the V+ or V- pins and out the other V+ or V- pin to other devices. The second set of V+ and V- pins is for AC bypassing only. For dual-supply operation, the MAX4567 should have four 10nF bypass capacitors connected to each V+ and V- pin as close to the package as possible. For sin- gie-supply operation, the MAX4567 should have two 10nF bypass capacitors connected (one to each V+ pin) as close to the package as possible. On the MAX4565, GND5 and GND6 should always be connected to the ground plane with solid copper to improve isolation and crasstalk. Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Signal Routing Keep all signal leads as short as possible. Separate all signal leads from each other and other traces with the ground plane on both sides of the board. Where possible, use coaxial cable instead of printed circuit board traces. Board Layout iC sockets degrade high-frequency performance and should not be used if signal bandwidth exceeds 5MHz. Surface-mount parts, having shorter internal lead frames, provide the best high-frequency performance. Keep all bypass capacitors close to the device, and separate all signal leads with ground planes. Such grounds tend to be wedge-shaped as they get closer to the device. Use vias to connect the ground planes on each side of the board, and place the vias in the apex of the wedge-shaped grounds that separate signal leads. Logic-level signal lead placement is not critical. tone ve ; : 77 885 roy tt toe our! = MAXIM oe o ' [7] SNS aan 2 = ofy+2te ' = Icom : s PAAMIAA| 0) oeocrtrin : gy wot a S14 MAXASES i} ! : anor [_ ! gF7r Lota | out! ' > aa : : ay GP i Pe in coM2 int ~ ' _ zt, ae ee yt MAXUM | | pF NO2 ; s ' ' = ow? CS ; > ee ce ' ~ tt ' , ' ct : o ai Wi == yt Ade ' yh i _ NOB 50/752 ! ' i = GHOST Re OUTAN } = : ' = my "| ADDRESS ' : cOM4 of 14 | DECODING i> : + nn OT i : ' . gine |} Gf tNO4 To : : = sty 1 rth one e ners crt etre ' Lode eee ee ee eee a = [in rina po otoy gg t 1 : " wot lll: | our! : IN2 Bog ' & T al 7 : 2 = wat bY : one eo [o> G tO ADDITIONAL IN3 4 MAAMIAA | | MUXES iN3 af meet 1 i 1 1 : i : 3 MAX4565 ' Na ' : 'G WT 4 : Mm _ => Vv. ; = o Ge ' 10nF : = > : = : bine ne eee cee cee n ecw ele tenon eeeeeeeeee ; eee cece ween ene eeeeee 3 Figure 2. 4-Channef Multiplexer MAAKLM 1-103 LOSPXVIN/S9OSPXVW/S9OSPXVNMAX4565/MAX4566/MAX4567 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Multiplexer Stray capacitance of traces and the output capacitance With its excellent off isolation. the MAX4565 is ideal for of switches placed in parallel reduces bandwidth, so the use in high-frequency video multiplexers. Figure 2 outputs of na more than four individual switches should shows such an application for switching any one of four be placed in parallel to maintain a high bandwidth. If video inputs to a single output. The same circuit may more than four mux channels are needed, the 4-channe! be used as a demultiplexer by simply reversing the sig- circuit should be duplicated and cascaded. nal direction. Test Circuits/Timing Diagrams 1OnF 45V eH Ve NO_ORNC_ Ny Vin PAAXKLAA MAX4565 MAX4566 Ya is MAX4567 Your COM_ Vout Ry = 3000 500 }- 10nF ALL GND__ PINS ARE CONNECTED 10 GROUND PLANE (OV), REPEAT TEST FOR EACH SWITCH. V- IS CONNECTED TO GNC (QV) FOR SINGLE-SUPPLY OPERATION Figure 3. Switching Time 4-104 MA AXIMMAQuad/Dual, Low-Voltage, Bidirectional RF/Video Switches Test Circults/Timing Diagrams (continued) 10nF +5V fa *COM3 * COMZ PAAXLAA MAX4566 * nog 4 Vin_ *NC3 Vout ta <20ns GND - V+ te <20n T A, = 30082 Vin, 50% rs 50n Hy ov 4OnF = = ~5V " REPEAT TEST FOR OTHER PAIR OF SWITCHES. { [ Vout Jone +5 ou fan he NC_ W ALL GNO_ PINS ARE CONNECTED TO GROUND PLANE (QV). NOL, V+ IS CONNECTED TO GND (OV) FOR SINGLE-SUPPLY OPERATION. PAAXIAA Vx. MAX4567 ~ *COM_ Vout GND. V: RL = 3000 "ot 10nF = = AV ** REPEAT TEST FOR OTHER SWITCH. Figure 4. Break-Before-Make Interval (MAX4566/MAX4567 only) MAXUM 1-105 LOSUXVW/99SPXVW/SOSPXUWMAX4565/MAX4566/MAX4567 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Test Circuits/Timing Diagrams (continued) 10AF 45) 4 MAXIAN MAX4565 = MAX4566 vm MAX4567 . my GND. V- Et = -aV V- IS CONNECTED TO GND (OV) FOR SINGLE-SUPPLY OPERATION. NO_ OR NC_ Vwo = OV C, = 1000pF t Vour NN fer AVourt IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER ERROR G WHEN THE CHANNEL TURNS OFF. Q= AVoyt x Ch Figure . Charge Injection +5V 10nF Ce OV OR V+ -4 IN Vin < 502 5082 NO MAXIM ~ MAX4565 MAX4566 MAX4567 com. Vout MEAS GND. V- seh x (10nF -5V IHD IHD MEASUREMENTS ARE STANDARDIZED AGAINST SHORT AT IC TERMINALS. V- 1S CONNECTED TO GND (OV) FOR SINGLE-SUPPLY OPERATION. 502 OFF ISOLATION = 20log YOUL NETWORK VN ANALYZER __ ON LOSS = 20109 a CROSSTALK = 20!0g ut = REF nN 502 a HVA i OFF ISOLATION IS MEASURED BETWEEN COM_ AND OFF"NO_ ORNC_ TERMINAL ON EACH SWITCH. ON LOSS IS MEASURED BETWEEN COM_ AND "ON" NO_ OR NC_ TERMINAL ON EACH SWITCH CROSSTALK IS MEASURED FROM ONE CHANNEL TO ALL OTHER CHANNELS. SIGNAL DIRECTION THROUGH SWITCH IS REVERSED; WORST VALUES ARE RECORDED. Figure 6. On Loss, Off Isolation, and Crosstalk 1-106 MAAXKIAAQuad/Dual, Low-Voltage, Bidirectional RF/Video Switches Test Circuits/Timing Diagrams (continued) Chip Topographies MAX4565 TOnF +5V COM1 IN1 IN2 COM2 ov OR Vs FIN, Ve NOL we MAMMA | o GND2 maxases NC NDI MAXA56G ms Mo N02 1 Th MAXASE? ony proto CAPACITANCE a ae GND. ve L ANALYZER V- GND6 (2.0amm) GNDS Hos r 4 Nod 4OnF = HW eNDa GND: ALL GND_ PINS ARE CONNECTED TO GROUND PLANE (OV). | | N.C. Figure 7. NO_, NC., COM. Capacitance Om4 ee (1.83mm) MAX4566 MAX4567 COMI IN1 IN2 COM2 NO INT NOZ Vs A ci N.C. . : v- GnD2 NDI GNDi | 7 N.C. NOt N.C. + . j Ch NAc. 0.082" . ; 0.082" ve 58mm) NC. COM? 7 o8mm) Nc. HET com N.C, NCA N.C. N.C. NDA SND3 GND4 COM4 COM3 GND3 0.072" (1.83mm) Ve NCTIN2 NC2 0.072" (1.63mm) TRANSISTOR COUNT: 257 SUBSTRATE INTERNALLY CONNECTED TO V+ 1-107 MAAKIAA LOSPXVW/99SPXVW/SOSPXVNMAX4565/MAX4566/MAX4567 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches Ordering Information (continued) PART TEMP. RANGE PIN-PACKAGE PART TEMP. RANGE PIN-PACKAGE MAX4565CAP Orc to +70C 20 SSOP MAX4566EEE -40C to +85C 16 QSOP MAX4565C/D OC to +70C Dice* MAX4567CPE OC to +70C 16 Plastic DIP MAX4565EPP ~40C to +85C 20 Plastic DIP MAX4567CSE OC to +70C: 16 Narrow SO MAX4565EWP -40C to +85C 20 Wide SO MAX4567CEE OC to +70C 16 QSOP MAX4565EAP ~A0C to +85C 20 SSOP MAX4567C/D 0C to +70C Dice* MAX4566CPE OC ta +70C 16 Plastic DIP MAX4567EPE -40C to +85C 16 Plastic DIP MAX4566CSE OC to +70C 16 Narrow SO MAX4567ESE -40C to +85C 16 Narrow SO MAX4566CEE OC to +70C 16 QSOP MAX4567EEE -40C to +85C 16 QSOP MAX4566C/D OC to +70C Dice* *Contact factory for dice specifications. MAX4566EPE -40C to +85C 16 Plastic DIP MAX4566ESE -40C to +86C 16 Narrow SO 4-108 PAAXIAA