W986416EB/W9864G6EB Data Sheet
1M × 4 BANKS × 16 BITS SDRAM
Publication Release Date: Sep. 23, 2005
- 1 - Revision P06
Table of Contents-
1. GENERAL DESCRIPTION ......................................................................................................... 3
2. FEATURES ................................................................................................................................. 3
3. AVAILABLE PART NUMBER ..................................................................................................... 3
4. PIN CONFIGURATION...............................................................................................................4
5. PIN DESCRIPTION..................................................................................................................... 5
6. BLOCK DIAGRAM ...................................................................................................................... 6
7. FUNCTIONAL DESCRIPTION ................................................................................................... 7
7.1 Power Up and Initialization ............................................................................................. 7
7.2 Programming Mode Register.......................................................................................... 7
7.3 Bank Activate Command ................................................................................................ 7
7.4 Read and Write Access Modes ...................................................................................... 7
7.5 Burst Read Command .................................................................................................... 8
7.6 Burst Command.............................................................................................................. 8
7.7 Read Interrupted by a Read ........................................................................................... 8
7.8 Read Interrupted by a Write............................................................................................ 8
7.9 Write Interrupted by a Write............................................................................................ 8
7.10 Write Interrupted by a Read............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 9
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode ..................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command.................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode.................................................................................................... 11
8. TABLE OF OPERATING MODES ............................................................................................ 12
8.1 Simplified State Diagram .............................................................................................. 13
9. ABSOLUTE MAXIMUM RATING.............................................................................................. 14
10. RECOMMENDED DC OPERATING CONDITIONS................................................................. 14
11. CAPACITANCE......................................................................................................................... 14
W986416EB/W9864G6EB
- 2 -
12. DC CHARACTERISTICS.......................................................................................................... 15
13. RECOMMENDED DC OPERATING CONDITIONS................................................................. 15
14. AC CHARACTERISTICS .......................................................................................................... 16
15. TIMING WAVEFORMS ............................................................................................................. 19
15.1 Command Input Timing ................................................................................................ 19
15.2 Read Timing.................................................................................................................. 20
15.3 Control Timing of Input Data......................................................................................... 21
15.4 Control Timing of Output Data...................................................................................... 22
15.5 Mode Register Set Cycle .............................................................................................. 23
16. OPERATING TIMING EXAMPLE ............................................................................................. 24
16.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 24
16.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)............ 25
16.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 26
16.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge)............ 27
16.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 28
16.6 Interleaved Bank Write (Burst Length = 8, Autoprecharge) ......................................... 29
16.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 30
16.8 Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)..................................... 31
16.9 Autoprecharge Read (Burst Length = 4, CAS Latency = 3) ......................................... 32
16.10 Autoprecharge Write (Burst Length = 4) ..................................................................... 33
16.11 Autorefresh Cycle........................................................................................................ 34
16.12 Self-refresh Cycle........................................................................................................ 35
16.13 Bust Read and Single Write (Burst Length = 4, CAS Latency = 3)............................. 36
16.14 Power-down Mode ...................................................................................................... 37
16.15 Auto-precharge Timing (Write Cycle).......................................................................... 38
16.16 Auto-precharge Timing (Read Cycle) ......................................................................... 39
16.17 Timing Chart of Read to Write Cycle........................................................................... 40
16.18 Timing Chart of Write to Read Cycle........................................................................... 41
16.19 Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 42
16.20 CKE/DQM Input Timing (Write Cycle)......................................................................... 43
16.21 CKE/DQM Input Timing (Read Cycle)......................................................................... 44
16.22 Self Refresh/Power Down Mode Exit Timing .............................................................. 45
17. PACKAGE DIMENSIONS......................................................................................................... 46
17.1 VFBGA 60 balls pitch=0.65mm .................................................................................... 46
18. VERSION HISTORY .................................................................................................................47
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 3 - Revision P06
1. GENERAL DESCRIPTION
W986416EB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words × 4 banks × 16 bits. Using pipelined architecture and 0.13 μm process technology,
W986416EB delivers a data bandwidth of up to 286M bytes per second (-7). The -7 parts can run up
to 143MHz/CL3. For special application, we provide extended temperature option the grade of -7E
can work well in wide temperature from -25° C to 85° C.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance..
2. FEATURES
• 2.7V ~3.6V power supply
• 1048576 words × 4 banks × 16 bits organization
• Self Refresh Current: Standard and Low Power
• CAS latency: 2 and 3
• Burst Length: 1, 2, 4, 8, and full page
• Sequential and Interleave burst
• Burst read, single write operation
• Byte data controlled by DQM
• Power-down Mode
• Auto-precharge and controlled precharge
• 4K refresh cycles/64 mS
• Interface: LVTTL
• Package: VFBGA 60 balls pitch=0.6
• W9864G6EB is using lead free materials with RoHS
3. AVAILABLE PART NUMBER
PART NUMBER SPEED (CL = 3) SELF REFRESH CURRENT
(MAX.) OPERATING
TEMPERATURE
W986416EB-7 143 MHz 3mA 0°C ~ 70°C
W986416EB-7E 143 MHz 3mA -25°C ~ 85°C
W986416EB/W9864G6EB
- 4 -
4. PIN CONFIGURATION
Top View
762
1
C
B
A
P
N
G
D
E
M
H
L
F
K
R
J
VSS
VSS
DQ14
DQ13
DQ12
DQ10
DQ8
NC
NC
NC
CKE
A
11
A
8
A
6
DQ9
DQ15
A
4
VSSQ
VDDQ
DQ11
VSSQ
NC
VSS
UDQM
CLK
NC
A
9
A
7
A
5
VDDQ
VDD
VDD
DQ1
DQ2
DQ3
DQ5
DQ7
NC
WE#
CAS#
CS#
BS0
A
10
A
1
DQ6
DQ0
A
3
VDDQ
VSSQ
DQ4
VDDQ
NC
VDD
LDQM
RAS#
NC
BS1
A
0
A
2
VSSQ
VSS
VSS
DQ14
DQ13
DQ12
DQ10
DQ8
NC
NC
NC
CKE
A
11
A
8
A
6
DQ9
DQ15
A
4
VSSQ
VDDQ
DQ11
VSSQ
NC
VSS
UDQM
CLK
NC
A
9
A
7
A
5
VDDQ
VDD
VDD
DQ1
DQ2
DQ3
DQ5
DQ7
NC
WE#
CAS#
CS#
BS0
A
10
A
1
DQ6
DQ0
A
3
VDDQ
VSSQ
DQ4
VDDQ
NC
VDD
LDQM
RAS#
NC
BS1
A
0
A
2
VSSQ
7 6 2 1
Bottom View
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 5 - Revision P06
5. PIN DESCRIPTION
BALL LOCATION PIN NAME FUNCTION DESCRIPTION
M1,M2,N1,N2,N6,
N7,P1,P2,P6,P7,R
6,
A0−A11 Address
Multiplexed pins for row and column address. Row
address: A0−A11. Column address: A0−A7. A10 is
sampled during a precharge command to determine
if all banks are to be precharged or bank selected
by BS0, BS1.
M6,M7 BS0, BS1 Bank Select
Select bank to activate during row address latch
time, or bank to read/write during address latch
time.
A2,A6,B1,B7,C1,C
7,D1,D2,D6,D7,E1
,E7,F1,F7,G1,G7
DQ0−DQ15 Data Input/
Output Multiplexed pins for data output and input.
L7 CS Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
K6 RAS Row Address
Strobe
Command input. When sampled at the rising edge
of the clock RAS , CAS and WE define the
operation to be executed.
K7 CAS
Column
Address
Strobe
Referred to RAS
J7 WE Write Enable Referred to RAS
J2,J6 UDQM
LDQM
Input/output
mask
The output buffer is placed at Hi-Z (with latency of
2) when DQM is sampled high in read cycle. In
write cycle, sampling DQM high will block the write
operation with zero latency.
K2 CLK Clock Inputs System clock used to sample inputs on the rising
edge of clock.
L1 CKE Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend
mode, or Self Refresh mode is entered.
A7,H6,R7 VDD
Power
(+3.3V)
Power for input buffers and logic circuit inside
DRAM.
A1,H2,R1 VSS Ground
Ground for input buffers and logic circuit inside
DRAM.
B6,C2,E6,F2 VDDQ
Power
(+3.3V) for
I/O buffer
Separated power from VDD, to improve DQ noise
immunity.
B2,C6,E2,F6 VSSQ Ground for
I/O buffer
Separated ground from VSS, to improve DQ noise
immunity.
G2,G6,H1,H7,J1,K
1,L2,L6 NC No
Connection No connection
W986416EB/W9864G6EB
- 6 -
6. BLOCK DIAGRAM
DQ0
DQ15
UDQM
LDQM
CLK
CKE
A10
CLOCK
BUFFER
COMMAND
DECODER
ADDRESS
BUFFER
REFRESH
COUNTER
COLUMN
COUNTER
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #2
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #0
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #3
DATA CONTROL
CIRCUIT
DQ
BUFFER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #1
NOTE:
The cell array configuration is 4096 * 256 * 16
ROW DECODER ROW DECODER
ROW DECODERROW DECODER
A0
A9
BS0
BS1
CS
RAS
CAS
WE
A11
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 7 - Revision P06
7. FUNCTIONAL DESCRIPTION
7.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs.
During power up, all VCC and VCCQ pins must be ramp up simultaneously to the specified voltage
when the input signals are held in the "NOP" state. The power up voltage must not exceed VCC +0.3V
on any of the input pins or VCC supplies. After power up, an initial pause of 200 μS is required
followed by a precharge of all banks using the precharge command. To prevent data contention on
the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial
pause period. Once all banks have been precharged, the Mode Register Set Command must be
issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required
before or after programming the Mode Register to ensure proper subsequent operation.
7.2 Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data
during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A
new command may be issued following the mode register set command once a delay equal to tRSC has
elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3 Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as TRAS (max.).
7.4 Read and Write Access Modes
After a bank has been activated, a read or write cycle can be followed. This is accomplished by setting
RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin voltage level
defines whether the access cycle is a read operation ( WE high), or a write operation ( WE low). The
address inputs determine the starting column address. Reading or writing to a different row within an
activated bank requires the bank be precharged and a new Bank Activate command be issued. When
more than one bank is activated, interleaved bank Read or Write operations are possible. By using the
programmed burst length and alternating the access and precharge operations between multiple
banks, seamless data access operation among many different pages can be realized. Read or Write
Commands can also be issued to the same bank or between active banks on every clock cycle.
W986416EB/W9864G6EB
- 8 -
7.5 Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS and WE high at the rising edge of the clock. The address inputs determine the starting column
address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst
length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page
explain the address sequence of interleave mode and sequence mode.
7.6 Burst Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while
holding RAS high at the rising edge of the clock. The address inputs determine the starting column
address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle
that the Write Command is issued. The remaining data inputs must be supplied on each subsequent
rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes
will be ignored.
7.7 Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS latency from the
interrupting Read Command the is satisfied.
7.8 Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
7.9 Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 9 - Revision P06
7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank
open for future Read or Write Commands to the same page of the active bank, if the burst length is full
page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop
Command is defined by having RAS and CAS high with CS and WE low at the rising edge of
the clock. The data DQs go to a high impedance state after a delay, which is equal to the CAS
Latency in a burst read cycle, interrupted by Burst Stop. If a Burst Stop Command is issued during a
full page burst write operation, then any residual data from the burst write cycle will be ignored.
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 n BL = 2 (disturb address is A0)
Data 1 n + 1 No address carry from A0 to A1
Data 2 n + 2 BL = 4 (disturb addresses are A0 and A1)
Data 3 n + 3 No address carry from A1 to A2
Data 4 n + 4
Data 5 n + 5 BL = 8 (disturb addresses are A0, A1 and A2)
Data 6 n + 6 No address carry from A2 to A3
Data 7 n + 7
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA ACCESS ADDRESS BUST LENGTH
Data 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 BL = 2
Data 1 A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2 A8 A7 A6 A5 A4 A3 A2 A1 A0 BL = 4
Data 3 A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4 A8 A7 A6 A5 A4 A3 A2 A1 A0 BL = 8
Data 5 A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6 A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7 A8 A7 A6 A5 A4 A3 A2 A1 A0
W986416EB/W9864G6EB
- 10 -
7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is
entered. During auto-precharge, a Read Command will execute as normal with the exception that the
active bank will begin to precharge automatically before all burst read cycles have been completed.
Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled
burst cycle. The number of clocks is determined by CAS latency.
A Read or Write Command with auto-precharge cannot be interrupted before the entire burst
operation is completed for the same bank. Therefore, use of a Read, Write, or Precharge Command is
prohibited during a read or write cycle with auto-precharge. Once the precharge operation has started,
the bank cannot be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-
Precharge command is illegal if the burst is set to full page length. If A10 is high when a Write
Command is issued, the Write with Auto-Precharge function is initiated. The SDRAM automatically
enters the precharge operation two clocks delay from the last burst write cycle. This delay is referred
to as write tDPL. The bank undergoing auto-precharge cannot be reactivated until tWR and tRP are
satisfied. This is referred to as tDAL, Data-in to Active delay (tDAL = tWR + tRP). When using the Auto-
precharge Command, the interval between the Bank Activate Command and the beginning of the
internal precharge operation must satisfy tRAS (min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising
edge of the clock. The Precharge Command can be used to precharge each bank separately or all
banks simultaneously. Three address bits, A10, BS0, and BS1 are used to define which bank(s) is to
be precharged when the command is issued. After the Precharge Command is issued, the precharged
bank must be reactivated before a new read or write access can be executed. The delay between the
Precharge Command and the Activate Command must be greater than or equal to the Precharge time
(tRP).
7.16 Self Refresh Command
The Self Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE
high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command.
Once the command is registered, CKE must be held low to keep the device in Self Refresh mode.
When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are
disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will
exit Self Refresh operation after CKE is returned high. A minimum delay time is required when the
device exits Self Refresh Operation and before the next command can be issued. This delay is equal
to the tAC cycle time plus the Self Refresh exit time.
If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly
distributed), a burst of 4,096 AUTO REFRESH cycles should be completed just prior to entering and
just after exiting the self refresh mode.
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 11 - Revision P06
7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations,
therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the
device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on tCK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS (min.) + tCK (min.).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS , CAS , and WE held high at the rising edge of
the clock. A No Operation Command will not terminate a previous operation that is still executing,
such as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS , CAS , and WE signals become don't
cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode
deactivates the internal clock and suspends any clocked operation that was currently being executed.
There is a one clock delay between the registration of CKE low and the time at which the SDRAM
operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay
from when CKE returns high to when Clock Suspend mode is exited.
W986416EB/W9864G6EB
- 12 -
8. TABLE OF OPERATING MODES
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.
Table 1 shows the truth table for the operation commands.
TABLE 1 TRUTH TABLE (NOTE (1), (2))
COMMAND DEVICE
STATE CKEN-1 CKEN DQM BS0, 1 A10 A0-A9 CS RAS CAS WE
Bank Active Idle H x x v v V L L H H
Bank Precharge Any H x x v L x L L H L
Precharge All Any H x x x H x L L H L
Write Active (3) H x x v L v L H L L
Write with Autoprecharge Active (3) H x x v H v L H L L
Read Active (3) H x x v L v L H L H
Read with Autoprecharge Active (3) H x x v H v L H L H
Mode Register Set Idle H x x v v v L L L L
No-Operation Any H x x x x x L H H H
Burst Stop Active (4) H x x x x x L H H L
Device Deselect Any H x x x x x H x x x
Auto-Refresh Idle H H x x x x L L L H
Self-Refresh Entry Idle H L x x x x L L L H
Self Refresh Exit idle
(S.R)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock suspend Mode
Entry
Active H L x x x x x x x x
Power Down Mode Entry Idle
Active (5)
H
H
L
L
x
x
x
x
x
x
x
x
H
L
x
H
x
H
X
H
Clock Suspend Mode
Exit
Active L H x x x x x x x X
Power Down Mode Exit Any
(power
down)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
X
H
Data write/Output Enable Active H x L x x x x x x x
Data Write/Output
Disable
Active H x H x x x x x x x
Notes:
(1) v = valid, x = Don't care, L = Low Level, H = High Level
(2) CKEn signal is input leve l when commands are provided.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 13 - Revision P06
8.1 Simplified State Diagram
Mode
Register
Set
IDLE CBR
Refresh
Self
Refresh
ROW
ACTIVE
Power
Down
Precharge
POWER
ON
Active
Power
Down
WRITE
WRITE
SUSPEND
WRITEA
WRITEA
SUSPEND
READ
SUSPEND
READ
READA
SUSPEND
READA
Precharge
MRS REF
ACT
CKE
CKE
CKE
CKE
CKE
CKE
CKE
CKE
CKE
CKE
SELF
SELF exit
CKE
CKE
Write with
Read
Write
Auto precharge
Auto precharge
Read with
Write
Write
Read
PRE(precharge termination)
PRE(precharge termination)
Read
BST
BST
PRE
Manual input
Automatic sequence
Notes:
MRS = Mode Register Set
REF = Refresh
ACT = Active
PRE = Precharge
WRITEA = Write with Auto precharge
READA = Read with Auto precharge
W986416EB/W9864G6EB
- 14 -
9. ABSOLUTE MAXIMUM RATING
PARAMETER SYM. RATING UNIT NOTES
Input, Column Output Voltage VIN, VOUT -0.3 − VCC +0.3 V 1
Power Supply Voltage VCC, VCCQ -0.3 − 4.6 V 1
Operating Temperature(-7) TOPR 0 − 70 °C 1
Operating Temperature(-7E) TOPR -25− 85 °C 1
Storage Temperature TSTG -55 − 150 °C 1
Soldering Temperature (10s) TSOLDER 260 °C 1
Power Dissipation PD 1 W 1
Short Circuit Output Current IOUT 50 mA 1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
10. RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to 70°C for -7, TA =-25 to 85°C for -7E)
PARAMETER SYM. MIN. TYP. MAX. UNIT NOTES
Supply Voltage (Normal operation) VCC 2.7 3.3 3.6 V 2
Supply Voltage for I/O Buffer VCCQ 2.7 3.3 3.6 V 2
Input High Voltage VIH 2.0 - VCC +0.3 V 2
Input Low Voltage VIL -0.3 - 0.8 V 2
Note: VIH (max.) = VCC/VCCQ+1.2V for pulse width < 5 nS
V
IL (min.) = VSS/VSSQ-1.2V for pulse width < 5 nS
11. CAPACITANCE
(VCC = 2.7~3.3V, TA = 25 °C, f = 1 MHz)
PARAMETER SYM. MIN. MAX. UNIT
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , , CKE)
Ci1 2.5 4 pf
Input Capacitance (CLK) CCLK 2.5 4 pf
Input/Output Capacitance (DQ0−DQ15) Co 4 6.5 pf
Input Capacitance DQM Ci2 3.0 5.5 pf
Note: These parameters are periodically sampled and not 100% tested
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 15 - Revision P06
12. DC CHARACTERISTICS
(VCC 2.7V~3.6V, TA = 0 to 70°C , TA =-25 to 85°C for -7E)
PARAMETER SYM. -7 ( MAX.) UNIT NOTES
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst operation
1 bank operation ICC1 80 3
Standby Current
tCK = min., CS = VIH
VIH/L = VIH (min.)/VIL (max.)
CKE = VIH ICC2 30 3
Bank: Inactive State CKE = VIL (Power
Down mode) ICC2P 3 3
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
CKE = VIH ICC2S 8
BANK: Inactive State CKE = VIL (Power
Down mode) ICC2PS 3 mA
No Operating Current
tCK = min., CS = VIH (min.) CKE = VIH ICC3 55
BANK: Active State (4 banks) CKE = VIL (Power
Down mode) ICC3P 5
Burst Operating Current (tCK = min.)
Read/Write command cycling ICC4 145 3, 4
Auto Refresh Current (tCK = min.)
Auto refresh command cycling ICC5 110 3
Self Refresh Current
Self refresh mode
(CKE = 0.2V)
Standard(-7/-7E) ICC6 3
13. RECOMMENDED DC OPERATING CONDITIONS
PARAMETER SYMBOL MIN. MAX. UNIT NOTES
Input Leakage Current
(0V ≤ VIN ≤ VCC, all other pins not under test = 0V) II(L) -5 5 µA
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VCCQ) VO(L) -5 5 µA
LVTTL Output ″H″ Level Voltage
(IOUT = -2 mA) VOH 2.4 - V
LVTTL Output "
L″ Level Voltage
(IOUT = 2 mA) VOL - 0.4 V
W986416EB/W9864G6EB
- 16 -
14. AC CHARACTERISTICS
(VCC = 2.7V~3.3V, VSS = 0V,TA = 0 to 70°C , TA =-25 to 85°C for -7E) (Notes: 5, 6.)
-7/-7E
PARAMETER SYM.
MIN. MAX.
UNIT NOTE
Ref/Active to Ref/Active Command Period tRC 65
Active to precharge Command Period tRAS 45 100000
Active to Read/Write Command Delay
Time tRCD 20
Ns
Read/Write(a) to Read/Write(b) Command
Period tCCD 1 Tck
Precharge to Active(b) Command Period tRP 18
Active(a) to Active(b) Command Period tRRD 14
Ns
Write Recovery Time CL* = 2
CL* = 3
tWR 2 Tck
CLK Cycle Time CL* = 2 tCK 8 1000
CL* = 3 7 1000
CLK High Level tCH 2
CLK Low Level tCL 2
Access Time from CLK CL* = 2 tAC 6
CL* = 3 5.5
Output Data Hold Time tOH 2
Output Data High Impedance Time tHZ 2 7
Output Data Low Impedance Time tLZ 0
Power Down Mode Entry Time tSB 0 7
Transition Time of CLK (Rise and Fall) tT 0.5 10
Data-in-Set-up Time tDS 1.5
Data-in Hold Time tDH 1
Address Set-up Time tAS 1.5
Address Hold Time tAH 1
CKE Set-up Time tCKS 1.5
CKE Hold Time tCKH 1
Command Set-up Time tCMS 1.5
Command Hold Time tCMH 1
Ns
Refresh Time tREF 64 Ms
Mode Register Set Cycle Time tRSC 14 Ns
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 17 - Revision P06
Notes:
1. Operation exceeds “ABSOLUTE MAXIMUM RATING” may cause permanent damage to the devices.
2. All voltages are referenced to VSS
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of Tck
and Trc.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power up Sequence
(1) Power up must be performed in the following sequence.
(2) Power must be applied to VCC and VCCQ (simultaneously) while all input signals are held in the “NOP” state. The
CLK signals must be started at the same time.
(3) After power-up a pause of at least 200 μseconds is required. It is required that DQM and CKE signals then be
held ’high‘ (VCC levels) to ensure that the DQ output is impedance.
(4) All banks must be precharged.
(5) The Mode Register Set command must be asserted to initialize the Mode Register.
(6) A minimum of eight Auto Refresh dummy cycles is required to stabilize the internal circuitry of the device.
6. AC Testing Conditions
PARAMETER CONDITIONS
Output Reference Level 1.4V
Output Load See diagram below
Input Signal Levels (VIH/VIL) 2.4V/0.4V
Transition Time (Rise and Fall) of Input Signal 1 Ns
Input Reference Level 1.4V
50 ohms
1.4 V
A
C TEST LOAD
Z = 50 ohmsoutput 30pF
1. Transition times are measured between VIH and VIL.
2. Thz defines the time at which the outputs achieve the open circuit condition and is not referenced to output
level.
3. These parameters account for the number of clock cycles and depend on the operating frequency of the
clock, as follows the number of clock cycles = specified value of timing/ clock period
(count fractions as whole number)
W986416EB/W9864G6EB
- 18 -
(1) Tch is the pulse width of CLK measured from the positive edge to the negative edge referenced to VIH
(min.).
Tcl is the pulse width of CLK measured from the negative edge to the positive edge referenced to VIL
(max.).
(2) A.C Latency Characteristics
CKE to clock disable (CKE Latency) 1 Tck
DQM to output to HI-Z (Read DQM Latency) 2
DQM to output to HI-Z (Write DQM Latency) 0
Write command to input data (Write Data Latency) 0
CS to Command input ( CS Latency) 0
CL = 2 2 Precharge to DQ Hi-Z Lead time
CL = 3 3
CL = 2 1 Precharge to Last Valid data out
CL = 3 2
CL = 2 2 Bust Stop Command to DQ Hi-Z Lead time
CL = 3 3
CL = 2 1 Bust Stop Command to Last Valid Data out
CL = 3 2
CL = 2 BL + Trp Tck+ Ns Read with Auto-precharge Command to
Active/Ref Command CL = 3 BL + Trp Tck+ Ns
CL = 2 (BL+1) + Trp Tck+ Ns Write with Auto-precharge Command to Active/Ref
Command CL = 3 (BL+1) + Trp Tck+ Ns
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 19 - Revision P06
15. TIMING WAVEFORMS
15.1 Command Input Timing
t
CK
CLK
A0-A10
BS0, 1
V
IH
V
IL
t
CMH
t
CMS
t
CH
t
CL
t
T
t
T
t
CKS
t
CKH
t
CKH
t
CKS
t
CKS
t
CKH
CS
RAS
CAS
WE
CKE
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
W986416EB/W9864G6EB
- 20 -
Timing Waveforms, continued
15.2 Read Timing
Read CAS Latency
t
AC
t
LZ
t
AC
t
OH
t
HZ
t
OH
Burst Length
Read Command
CLK
CS
RAS
CAS
WE
A0-A10
BS0, 1
DQ
Valid
Data-Out
Valid
Data-Out
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 21 - Revision P06
Timing Waveforms, continued
15.3 Control Timing of Input Data
*DQM2,3="L"
CLK
(Word Mask)
t
CMH
t
CMS
t
CMH
t
CMS
DQM0
t
CMS
t
CMH
t
CMH
DQM1
DQ0 -DQ7
DQ16 -DQ23
DQ8-DQ15
DQ24-DQ31
t
DH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
DS
t
DH
Valid
Data-in
Valid
Data-in
t
DH
Valid
Data-in
t
DH
t
DS
t
DH
t
DS
Valid
Data-in
Valid
Data-in
t
DH
Valid
Data-in
t
DH
Valid
Data-in
t
DS
t
DH
t
DS
t
DH
t
DS
Valid
Data-in
Valid
Data-in
t
DH
Valid
Data-in
t
DH
Valid
Data-in
t
DS
t
DH
t
DS
t
DH
t
DH
t
DH
t
DS
t
DS
t
DS
t
DS
DQ0 -DQ7
CLK
CKE
t
CKH
t
CKS
t
CKH
t
CKS
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
DQ24 -DQ31
DQ16 -DQ23
DQ8 -DQ15
(Clock Mask)
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
DS
t
DH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
DS
t
DS
t
DS
Valid
Data-in
Valid
Data-in
Valid
Data-in
t
CMS
W986416EB/W9864G6EB
- 22 -
Timing Waveforms, continued
15.4 Control Timing of Output Data
DQ0 -DQ7
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
t
OH
t
AC
t
OH
t
AC
t
OH
t
HZ
t
LZ
t
AC
t
OH
t
AC
OPEN
CLK
(Output Enable)
DQM0
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
DQM1
t
OH
t
AC
t
AC
t
HZ
t
AC
t
AC
Valid
Data-Out
Valid
Data-Out
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
DQ8 -DQ15
t
AC
t
HZ
t
LZ
OPEN
DQ24 -DQ31
DQ16 -DQ23
Valid
Data-Out
Valid
Data-Out
t
OH
t
AC
t
OH
t
AC
t
OH
t
HZ
t
AC
t
OH
t
AC
t
OH
Valid
Data-Out
Valid
Data-Out
t
OH
t
OH
t
LZ
t
OH
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
DQ16 -DQ23
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
DQ24 -DQ31
t
CKH
t
CKS
t
CKH
t
CKS
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
DQ0 -DQ7
CKE
CLK
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
t
OH
t
AC
Valid
Data-Out
Valid
Data-Out
Valid
Data-Out
DQ8 -DQ15
(Clock Mask)
*DQM2,3="L"
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 23 - Revision P06
Timing Waveforms, continued
15.5 Mode Register Set Cycle
A0
A1
A2
A3
A4
A5
A6
Burst Length
Addressing Mode
CAS Latency
(Test Mode)
A8 Reserved
A0
A7
A0
A9 A0
Write Mode
A10
BS0
A0A11
A0BS1
"0"
"0"
A0
A3 A0
Addressing Mode
A00 A0Sequential
A01 A0Interleave
A0A9 Single Write Mode
A00 A0Burst read and Burst write
A01 A0Burst read and single write
A0
A0A2 A1 A0
A00 0 0
A0
0 0 1
A00 1 0
A00 1 1
A01 0 0
A0
1 0 1
A0
1 1 0
A01 1 1
A0Burst Length
A0Sequential A0Interleave
1 A01
A0
2A0
2
A04 A04
A08 A08
A0
Reserved A0
Reserved
A0Full Page
A0CAS Latency
A0Reserved
A0Reserved
2
A03
Reserved
A0A6 A5 A4
A00 0 0
A0
0 1 0
A00 1 1
A01 0 0
A00 0 1
t
RSC
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
CLK
CS
RAS
CAS
WE
A0-A10
BS0,1
Register
set data
next
command
A0
Reserved
"0"
"0"
"0"
"0"
W986416EB/W9864G6EB
- 24 -
16. OPERATING TIMING EXAMPLE
16.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9
A10
WE
CS
t
RC
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RP
t
RAS
t
RAS
t
RCD
t
RCD
t
RCD
t
RCD
t
AC
t
AC
t
AC
t
AC
t
RRD
t
RRD
t
RRD
t
RRD
Active Read
Active Read
Active
Active
Active
Read
Read
Precharge
Precharge
Precharge
RAa RBb RAc RBd RAe
RAa CAw RBb CBx RAc CAy RBd CBz RAe
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3 cy0 cy1 cy2 cy3
Bank #0
Idle
Bank #1
Bank #2
Bank #3
RAS
CAS
BS1
BS0
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 25 - Revision P06
Operating Timing Example, continued
16.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)
01234567891011 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
CKE
DQM
A0-A9
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
AC
t
AC
t
AC
t
AC
t
RRD
t
RRD
t
RRD
t
RRD
Active Read
Active Read
Active
Active
Active
Read
Read
t
RC
RAa RAc RBd RAe
DQ
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3 cy0 cy1 cy2 cy3 dz0
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP* AP*
RAa CAw RBb CBx RAc CAy RBd RAe
CBz
RBb
AP*
t
RCD
W986416EB/W9864G6EB
- 26 -
Operating Timing Example, continued
16.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
01 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa CAx
RBb
RBb CBy
RAc
RAc CAz
ax0 ax1 ax2 ax3 ax4 ax5 ax6 by0 by1 by4 by5 by6 by7 CZ0
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9
A10
BS1
WE
CAS
RAS
CS
Active Read
Precharge Active Read
Precharge Active
t
AC
t
AC
Read
Precharge
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
BS0
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 27 - Revision P06
Operating Timing Example, continued
16.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge)
A0-A9
Bank #0
Idle
Bank #1
Bank #2
Bank #3
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
ax0 ax1 ax2 ax3 ax4 ax5 ax6 ax7 by0 by1 by4 by5 by6 CZ0
RAa
RAa
CAx
RBb
RBb CBy
(CLK = 100 MHz)
RAc
RAc CAz
* AP is the internal precharge start timing
Active Read
Active
Active Read
t
CAC
t
CAC
t
CAC
CLK
DQ
CKE
DQM
A10
WE
CAS
RAS
CS
Read
AP*
AP*
BS1
BS0
W986416EB/W9864G6EB
- 28 -
Operating Timing Example, continued
16.5 Interleaved Bank Write (Burst Length = 8)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RC
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
RCD
t
RRD
t
RRD
RAa
RAa CAx
RBb
RBb CBy
RAc
RAc CAz
ax0 ax1 by4 by5 by6 by7 CZ0 CZ1 CZ2
(CLK = 100 MHz)
Write
Precharge
Active
Active Write
Precharge
Active Write
CLK
DQ
CKE
DQM
A0-A9
A10
BS1
WE
CAS
RAS
CS
Idle
Bank #0
Bank #1
Bank #2
Bank #3
BS0
ax4 ax5 ax6 ax7 by0 by1 by2 by3
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 29 - Revision P06
Operating Timing Example, continued
16.6 Interleaved Bank Write (Burst Length = 8, Autoprecharge)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
tRC
t
RAS tRP
tRAS
t
RCD tRCD t
RCD
t
RRD tRRD
RAa
RAa CAx
RBb
RBb CBy
RAb
RAc
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
CAz
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A
0-A9
A
10
BS1
WE
CAS
RAS
CS
A
ctive Write Write
A
ctive
Bank #0
Idle
Bank #1
Bank #2
Bank #3
A
P*
A
ctive Write
A
P*
BS0
W986416EB/W9864G6EB
- 30 -
Operating Timing Example, continued
16.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
CCD
t
CCD
t
CCD
t
RAS
t
RAS
t
RCD
t
RCD
t
RRD
RAa
RAa CAI
RBb
RBb CBx CAy CAm CBz
a0 a1 a2 a3 bx0 bx1 Ay0 Ay1 Ay2 am0 am1 am2 bz0 bz1 bz2 bz3
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9
A10
BS1
WE
CAS
RAS
CS
Active Read
Active Read
Read Read
Read
Precharge
t
AC
t
AC
t
AC
t
AC
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
BS0
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 31 - Revision P06
Operating Timing Example, continued
16.8 Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
RAS
t
RP
t
RCD
t
WR
RAa
RAa CAx CAy
ax0 ax1 ax2 ax3 ax4 ax5 ay1
ay0 ay2 ay4
ay3
QQ Q Q Q Q DDD
D
D
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read Write Precharge
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416EB/W9864G6EB
- 32 -
Operating Timing Example, continued
16.9 Autoprecharge Read (Burst Length = 4, CAS Latency = 3)
01 2 3 456789 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9
A10
WE
CAS
RAS
CS
BS1
t
RC
t
RAS
t
RP
t
RAS
t
RCD
t
RCD
t
AC
t
AC
Active Read AP* Active Read AP*
RAa RAb
RAa CAw RAb CAx
aw0 aw1 aw2 aw3
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
BS0
bx0 bx2bx1 bx3
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 33 - Revision P06
Operating Timing Example, continued
16.10 Autoprecharge Write (Burst Length = 4)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
RAa
t
RCD
t
RCD
RAb RAc
RAa CAw RAb CAx RAc
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
Active
Active Write AP* Active Write AP*
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W986416EB/W9864G6EB
- 34 -
Operating Timing Example, continued
16.11 Autorefresh Cycle
0123456789 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
All Banks
Prechage
Auto
Refresh Auto Refresh (Arbitrary Cycle)
t
RC
t
RP
t
RC
CLK
DQ
CKE
DQM
A0-A9
A10
WE
CAS
RAS
CS
BS0,1
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 35 - Revision P06
Operating Timing Example, continued
16.12 Self-refresh Cycle
0123456789 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9
A10
BS0,1
WE
CAS
RAS
CS
t
CKS
t
SB
t
CKS
t
CKS
All Banks
Precharge Self Refresh
Entry
Arbitrary Cycle
t
RP
Self Refresh Cycle
t
RC
No Operation Cycle
W986416EB/W9864G6EB
- 36 -
Operating Timing Example, continued
16.13 Bust Read and Single Write (Burst Length = 4, CAS Latency = 3)
0123456789 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
(CLK = 100 MHz)
QQ Q Q D DDQQQQ
Read Read
Single WriteActive
Bank #0
Idle
Bank #1
Bank #2
Bank #3
CS
RAS
CAS
WE
BS1
A10
A0-A9
DQM
CKE
DQ
t
RCD
RBa
RBa
CBv CBw CBx CBy CBz
av0 av1 av2 av3 aw0 ax0 ay0 az0 az1 az2 az3
t
AC
t
AC
BS0
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 37 - Revision P06
Operating Timing Example, continued
16.14 Power-down Mode
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
RAa CAa RAa CAx
RAa RAa
ax0 ax1 ax2 ax3
t
SB
t
CKS
t
CKS
t
CKS
t
SB
t
CKS
Active Standby
Power Down mode
Precharge Standby
Power Down mode
Active NOP Precharge NOPActive
Note: The PowerDown Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the PowerDown mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
CLK
DQ
CKE
DQM
A0-A9
A10
BS
WE
CAS
RAS
CS
Read
W986416EB/W9864G6EB
- 38 -
Operating Timing Example, continued
16.15 Auto-precharge Timing (Write Cycle)
Act
01 32
(1) CAS Latency = 2
(a) burst length = 1
DQ
45 76891110
Write
D0
ActAP
Command
(b) burst length = 2
DQ
Write
D0
ActAP
Command
tRP
tRP
D1
(c) burst length = 4
DQ
Write
D0
ActAP
Command
tRP
D1
(d) burst length = 8
DQ
Write
D0
ActAP
Command
tRP
D1
D2 D3
D2 D3 D4 D5 D6 D7
(2) CAS Latency = 3
(a) burst length = 1
DQ
Write
D0
ActAP
Command
(b) burst length = 2
DQ
Write
D0
ActAP
Command
tRP
tRP
D1
(c) burst length = 4
DQ
Write
D0
ActAP
Command
tRP
D1
(d) burst length = 8
DQ
Write
D0
AP
Command
tRP
D1
D2 D3
D2 D3 D4 D5 D6 D7
tWR
tWR
tWR
tWR
tWR
tWR
tWR
tWR
12
Act
represents the Write with Auto precharge command.
represents the start of internal precharing.
represents the Bank Active command.
Write
AP
Act
Act
When the /auto precharge command is asserted,the period from Bank Activate
command to the start of intermal precgarging must be at least tRAS (min).
Note )
CLK
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 39 - Revision P06
Operating Timing Example, continued
16.16 Auto-precharge Timing (Read Cycle)
Read AP
0 1110987654321
Q0
Q0
Read AP Act
Q1
Read AP Act
Q1 Q2
AP ActRead
Act
Q0
Q3
(1) CAS
Latency=2
Read
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least t
RAS
(min).
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note:
t
RP
t
RP
t
RP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
t
RP
Q0
Read AP Act
Q0
Read AP Act
Q1
Q0
Read AP Act
Q1 Q2 Q3
Read AP Act
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
(2) CAS
Latency=3
t
RP
t
RP
t
RP
t
RP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
W986416EB/W9864G6EB
- 40 -
Operating Timing Example, continued
16.17 Timing Chart of Read to Write Cycle
Note: The Output data must be masked by DQM to avoid I/O conflict.
Read Write
1110987654321
Read
Read
Read Write
Write
D0 D1 D2 D3
Write
DQ
DQ
( a ) Command
0
DQ
DQ
DQM
( b ) Command
DQM
( b ) Command
DQM
DQM
D0 D1 D2 D3
D0 D1 D2 D3
D0 D1 D2 D3
(1) CAS Latency=2
( a ) Command
(2) CAS Latency=3
In the case of Burst Length = 4
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 41 - Revision P06
Operating Timing Example, continued
16.18 Timing Chart of Write to Read Cycle
01110987654321
In the case of Burst Length = 4
Q0
Read
Q1 Q2 Q3
Read
Write
Write
D0 D1
DQ
DQ
( a ) Command
( b ) Command
DQM
DQM
(2) CAS Latency = 3
Q0 Q1 Q2 Q3D0
ReadWrite
Read
Write
Q0 Q1 Q2 Q3
Q0 Q1 Q2 Q3
( a ) Command
DQ
DQ
DQM
( b ) Command
DQM
(1) CAS Latency = 2
D0
D0 D1
W986416EB/W9864G6EB
- 42 -
Operating Timing Example, continued
16.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)
Read BST
0 1110987654321
DQ
Q0 Q1 Q2 Q3
BST
( a ) CAS latency =2
Command
( b )CAS latency = 3
(1) Read cycle
Q4
(2) Write cycle
Command
Read
Command
Q0 Q1 Q2 Q3 Q4
Q0 Q1 Q2 Q3 Q4
DQ
DQ
Write BST
Note: represents the Burst stop command
BST
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 43 - Revision P06
Operating Timing Example, continued
16.20 CKE/DQM Input Timing (Write Cycle)
7
6
5432
1
CKE MASK
( 1 )
D1 D6D5D3D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
7
6
5432
1
( 2 )
D1 D6
D5
D3D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
76
5432
1
( 3 )
D1 D6D5D4
D3D2
CLK cycle No.
External
CKE
DQM
DQ
DQM MASK
DQM MASK CKE MASK
CKE MASK
Internal
CLK
CLK
CLK
W986416EB/W9864G6EB
- 44 -
Operating Timing Example, continued
16.21 CKE/DQM Input Timing (Read Cycle)
7
6
5432
1
( 1 )
Q1 Q6
Q4Q3Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Open Open
7
6
5432
1
Q1 Q6
Q3
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Open
( 2 )
765432
1
Q1 Q6
Q3
Q2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Q5Q4
( 3 )
Q4
CLK
CLK
CLK
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 45 - Revision P06
Operating Timing Example, continued
16.22 Self Refresh/Power Down Mode Exit Timing
Asynchronous Control
Input Buffer turn on time (Power down mode exit time) is specified by
Command
NOP
CLK
CKE
Command
A ) t CK
< t CKS (min.) + t CK (min.)
Input Buffer Enable
Command
CLK
CKE
Command
B) tCK >= tCKS (min.) + t CK(min.)
Input Buffer Enable
Note:
Command
NOP
All Input Buffer (Include CLK Buffer) are turned off in the Power Down mode
and Self Refresh mode
Represents the No-Operation command
Represents one command
tCK
tCK
tCKS(min)+tCK(min)
tCKS(min)+tCK(min)
CKS
t (min.) + tCK (min.)
W986416EB/W9864G6EB
- 46 -
17. PACKAGE DIMENSIONS
17.1 VFBGA 60 balls pitch=0.65mm
W986416EB/W9864G6EB
Publication Release Date: Sep. 23, 2005
- 47 - Revision P06
18. VERSION HISTORY
VERSION DATE PAGE DESCRIPTION
P01 5/07/2003 ALL NEW
P02 8/1/2003 DELETE –5,-6,-6I SPEC
P03 11/20/2003 1,15 ICC2P, ICC2PS,ICC6 SPE
P04 12/04/2003 14,27,31 CORRECT TIMING CHART,TRP SPEC
P05 1/6/2004 REMOVE –7L SPEC
P06 9/23/2005 3,14-16 ADD -7E GRADE
Important Notice
Winbond products are not designed, intended, authorized or w arranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications w herein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
ow n risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
