MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor
IPD_S110N12N3G
DataSheet
Rev.2.4
Final
Industrial&Multimarket
IPD110N12N3 G
IPS110N12N3 G
OptiMOS
TM
3Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen free according to IEC61249-2-21 *
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25 °C 75 A
T
C
=100 °C 54
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C 300
Avalanche energy, single pulse E
AS
I
D
=75 A, R
GS
=25 Ω120 mJ
Gate source voltage
3)
V
GS
±20 V
P
tot
T
C
=25 °C 136 W
Operating and storage temperature T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
3
)
T
jmax
=150°C and duty cycle D=0.01 for V
gs
<-5V
* Except package TO251-3
Value
1)
J-STD20 and JESD22
2)
see figure 3
V
DS
120 V
RDS(on),max 11 m
Ω
I
D
75
A
Product Summar
Type IPS110N12N3 G IPD110N12N3 G
Package PG-TO251-3 PG-TO252-3
Marking 110N12N 110N12N
R
ev. 2.4 page 1 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.1 K/W
RthJA minimal footprint - - 75
6 cm2 cooling area4) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 120 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=83 µA 234
Zero gate voltage drain current IDSS VDS=100 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=100 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=75 A - 9.2 11 mΩ
Gate resistance RG- 1.5 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=75 A 42 83 - S
Values
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance, junction -
ambient
Rev. 2.4 page 2 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics6)
Input capacitance Ciss - 3240 4310 pF
Output capacitance Coss - 408 543
Reverse transfer capacitance Crss -22-
Turn-on delay time td(on) -16-ns
Rise time tr-16-
Turn-off delay time td(off) -24-
Fall time tf-8-
Gate Char
g
e Characteristics5)
Gate to source charge Qgs -18-nC
Gate to drain charge Qgd -12-
Switching charge Qsw -20-
Gate charge total6) Qg-4965
Gate plateau voltage Vplateau - 5.6 - V
Output charge6) Qoss VDD=60 V, VGS=0 V -5675nC
Reverse Diode
Diode continous forward current IS- - 75 A
Diode pulse current IS,pulse - - 300
Diode forward voltage VSD VGS=0 V, IF=75 A,
Tj=25 °C - 1 1.2 V
trr -90 ns
Reverse recovery charge Qrr - 249 nC
5) See figure 16 for gate charge parameter definition
6) Defined by design. Not subject to production test
VR=60 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=60 V,
f=1 MHz
VDD=60 V, VGS=10 V,
ID=75 A, RG,ext=1.6 Ω
VDD=60 V, ID=75 A,
VGS=0 to 10 V
Rev. 2.4 page 3 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
0
20
40
60
80
100
120
140
0 50 100 150 200
Ptot [W]
TC[°C]
0
10
20
30
40
50
60
70
80
0 50 100 150 200
ID[A]
TC[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102103
10-1
100
101
102
103
ID[A]
VDS [V]
Rev. 2.4 page 4 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V 5 V
5.5 V
6 V
10 V
0
5
10
15
20
25
30
0 20406080
RDS(on) [mΩ]
ID[A]
25 °C
175 °C
0
50
100
150
200
02468
ID[A]
VGS [V]
0
20
40
60
80
100
0 20406080
gfs [S]
ID[A]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
8 V
10 V
0
50
100
150
200
250
012345
ID[A]
VDS [V]
Rev. 2.4 page 5 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=75 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
5
10
15
20
25
-60 -20 20 60 100 140 180
RDS(on) [mΩ]
Tj[°C]
83 µA
830 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
0 20406080100
C[pF]
VDS [V]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev. 2.4 page 6 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=67 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
24 V
60 V
96 V
0
2
4
6
8
10
0 1020304050
VGS [V]
Qgate [nC]
105
110
115
120
125
130
135
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
100101102103
100
101
102
103
IAS [A]
tAV [µs]
Rev. 2.4 page 7 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
PG-TO-251SL : Outline
Rev. 2.4 page 8 2015-06-24
IPD110N12N3 G
IPS110N12N3 G
PG-TO252-3: Outline
Rev. 2.4 page 9 2015-06-24
11
OptiMOS™3Power-Transistor
IPD_S110N12N3G
Rev.2.4,2015-07-16
RevisionHistory
IPD_S110N12N3 G
Revision:2015-07-16,Rev.2.4
Previous Revision
Revision Date Subjects (major changes since last revision)
2.4 2015-07-16 Update VGS(th) and package outline TO252-3
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