QFET FQB7N65C (R) 650V N-Channel MOSFET Features Description * * * * * * * These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 7A, 650V, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D D G G S D2-PAK FQB Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) IDM Drain Current - Pulsed FQB7N65C - Continuous (TC = 100C) (Note 1) Units 650 V 7 A 4.45 A 28 A 30 V 212 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 17.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25C 4.5 V/ns 173 W 1.38 W/C -55 to +150 C 300 C Thermal Characteristics FQB7N65C Units RJC Symbol Thermal Resistance, Junction-to-Case Parameter 0.75 C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 C/W (c)2008 Fairchild Semiconductor Corporation FQB7N65C Rev. A1 1 www.fairchildsemi.com FQB7N65C 650V N-Channel MOSFET October 2008 Device Marking Device Package Reel Size Tape Width Quantity FQB7N65C FQB7N65CTM D2-PAK 330mm 24mm 800 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 650 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.8 IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 A VDS = 520 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A gFS Forward Transconductance VDS = 40 V, ID =3.5 A (Note 4) -- 1.2 1.4 -- 8 -- S -- 955 1245 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 100 130 pF -- 12 16 pF -- 20 50 ns -- 50 110 ns -- 90 190 ns -- 55 120 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 325 V, ID = 7A, RG = 25 (Note 4, 5) VDS = 520 V, ID = 7A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7 A -- -- 1.4 V trr Reverse Recovery Time -- 400 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 7 A, dIF / dt = 100 A/s -- 3.3 -- C (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQB7N65C Rev. A1 2 www.fairchildsemi.com FQB7N65C 650V N-Channel MOSFET Package Marking and Ordering Information FQB7N65C 650V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom: 5.0 V Top : ID, Drain Current [A] ID, Drain Current [A] 1 10 1 10 0 10 o 150 C o 0 10 -55 C o 25 C Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 -1 10 0 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 3.0 2.5 VGS = 10V 2.0 1.5 VGS = 20V 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 1.0 -1 0 5 10 10 15 0.2 0.4 ID, Drain Current [A] 1.2 1.4 1.6 1.8 2.0 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 130V 10 VGS, Gate-Source Voltage [V] Ciss 1200 Coss 800 Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 400 1.0 Figure 6. Gate Charge Characteristics 1600 Capacitances [pF] 0.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 2000 0.6 VDS = 325V 8 VDS = 520V 6 4 2 Note : ID = 7A 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] FQB7N65C Rev. A1 0 4 8 12 16 20 24 28 QG, Total Gate Charge [nC] 3 www.fairchildsemi.com FQB7N65C 650V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2 8 10 10 s 100 s ID, Drain Current [A] 6 ID, Drain Current [A] 1 10 1ms 10ms 100ms 0 10 Operation in This Area is Limited by R DS(on) DC -1 * Notes : o 1. TC = 25 C 10 4 2 o 2. TJ = 150 C 3. Single Pulse -2 10 10 0 10 1 2 10 10 0 25 3 50 75 VDS, Drain-SourceVoltage[V] 100 125 150 o TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 Z? JC(t), Thermal Response 10 D=0.5 0.2 0.1 -1 10 0.05 PDM 0.02 t1 0.01 single pulse -2 10 -5 10 -4 10 -3 10 t2 * Notes : 0 1. ZJC(t) = 0.75 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Z? JC(t) -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FQB7N65C Rev. A1 4 www.fairchildsemi.com FQB7N65C 650V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB7N65C Rev. A1 5 www.fairchildsemi.com FQB7N65C 650V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB7N65C Rev. A1 6 www.fairchildsemi.com FQB7N65C 650V N-Channel MOSFET Mechanical Dimensions D2 - PAK Dimensions in Millimeters FQB7N65C Rev. 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