DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
MODEM Protection against:
-TIA/EIA-IS-968 Type A & B surge
-UL 60950, Clause 6. power cross
-CSA 22.2 No. 60950, Clause 6. power cross
Low Differential Capacitance ................................... 23 pF typ.
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
After a TIA/EIA-IS-968 (replaces FCC Part 68) Type A surge the equipment can be faulty, provided that the fault mode causes the equipment to
be unusable. There are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. For modems with a
TISP4350T3BJ connected between the Ring and Tip wires (and without overvoltage protection to ground), the longitudinal 10/160 applied to
both Ring and Tip will not activate the TISP4350T3BJ, giving an operational pass. The metallic 10/560 is applied between Ring and Tip wires
and will operate the TISP4350T3BJ. As the TISP4350T3BJ has a current rating of 100 A, 10/560 it will survive the FCC Part Type A 100 A,
10/560 metallic surge giving an operational pass.
How to Order
Device Symbol
SMB Package (Top View)
Rated for International Surge Wave Shapes
12
MDXXCM
RT
T
R
SD4XAA
Wave Shape Standard IPPSM
A
2/10 GR-1089-CORE 250
8/20 IEC 61000-4-5 250
10/160 TIA/EIA-IS-968 150
10/700 ITU-T K.20/.21/.45 120
9/720 TIA/EIA-IS-968 120
10/560 TIA/EIA-IS-968 100
10/1000 GR-1089-CORE 80
.............................................. UL Recognized Component
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
*RoHS COMPLIANT
Device VDRM
V
V(BO)
V
’4290T3 220 290
’4350T3 275 350
’4400T3 335 400
Device Package Carrier
TISP4xxxT3BJ BJ (SMB/DO-214AA J-Bend) R (Embossed Tape Reeled) TISP4xxxT3BJR-S
Order As
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Description (Continued)
TISP4xxxT3BJ Overvoltage Protector Series
Overload Ratings, TA = 25 °C (Unless Otherwise Noted)
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
After a TIA/EIA-IS-968 Type B surge the equipment must be operational. As the TISP4350T3BJ has a current rating of 120 A, it will survive both
Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to FCC Part 68 Type B surges.
The TIA/EIA-IS-968 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350T3BJ will
not clip the B type ringing voltage as it has a high impedance up to 275 V.
Rating Symbol Value Unit
Peak overload on-state current, a.c. power line cross tests UL 60950 (see Note 4) IT(OV)M
See Figure 4
for current
versus time
A rms
NOTE 4: These electrical stress levels may damage the device silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
Rating Symbol Value Unit
Repetitive peak off-state voltage (see Note 1) ’4290T3
’4350T3 VDRM
±220
±275
’4400T3 ±335
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) ±250
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) ±250
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 voltage wave shape) ±150
5/310 (ITU-T K.44, 10/700 voltage wave shape used in K.20/45/21) ±120
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 voltage wave shape) ±120
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 voltage wave shape) ±100
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) ±80
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
ITSM
25
30
2.1
A
20 ms (50 Hz), full sine wave
16.7 ms (60 Hz), full sine wave
1000 s 50 Hz/60 Hz
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A diT/dt 500 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ=25°C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Recommended Operating Conditions
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Component Min Typ Max Unit
RS
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 type A surge survival
(T-G or R-G connection)
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 type A surge survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 type B surge survival
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
2.5
0
0
5
0
6
Ω
IDRM Repetitive peak off-
state current
IHHolding current IT=±5A, di/dt=+/-30mA/ms ±150 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85 VDRM ±5 kV/µs
IDOff-state current VD=±50 V
VD DRM
=V
TA = 85 °C±10 µ
TA = 25 °C±5µA
TA = 85 °C±10
A
Coff Off-state capacitance
f=1MHz, V =1V rms, V
Dd =0,
f=1MHz, V =1V rms, V
Dd = -1 V
f=1MHz, V =1V rms, V
Dd = -2 V
f=1MHz, V =1V rms, V
Dd = -50 V
f=1MHz, V =1V rms, V
Dd = -100 V
’4290T3
’4350T3
±290
±350
’4400T3 ±400
54
48
43
65
58
52 pF
20
16
24
19
Parameter Test Conditions Min Typ Max Unit
I(BO) AC breakover current dv/dt = ±250 V/ms, RSOURCE =300Ω±800 A
V
V
(BO) AC breakover voltage dv/dt = ±250 V/ms, RSOURCE =300Ω
V
TOn-state voltage ITW
=±5 A, t = 100 µs±3V
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB,
IT = ITSM(1000),
TA = 25 °C
TA = 25 °C
, (see Note 5) 115
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, 52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v VDRM
IDRM
VD
IH
ITSM
IPPSM
V(BO)
ID
Quadrant I
I
Switching
Characteristic
Quadrant III
Switching
Characteristic
+v
+i
V(BO)
VD
ID
IH
ITSM
IPPSM
-i PM4XAG
VDRM
IDRM
I(BO)
I(BO)
IT
VT
IT
VT
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Typical Characteristics
Figure 2. Figure 3.
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
VD - Off-state Voltage - V Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1TC4TAA
TJ = 25 °C
Vd = 1 Vrms
TYPICAL CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
VD —
23457 20304050110
|Coff(+VD) - Coff(-VD)| — Capacitance Asymmetry – pF
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0
1.0
Vd = 1 V rms, 1 MHz
Vd = 10 mV rms, 1 MHz
TC4TAB
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Rating and Thermal Information
Figure 4. Peak Overload On-state Current against Duration
PEAK OVERLOAD ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·01 0·1 1 10 100 1000
IT(OV)M — Peak Overload On-State Current – A rms
2
2.5
3
3.5
4
5
6
7
8
9
15
20
25
30
35
40
10
TI4MAM
40 A 100 A2s
2.2 A
7 A
WIRING
SIMULATOR
DEVICE WILL
CARRY CURRENT
OF TESTS 1 THRU 5
CLAUSE 6.4, UL 60950,
FOR FULL TEST TIME
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
