DMG6602SVT-7 - DIODES Incorporated

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 1 of 10

www.diodes.com May 2012

DMG6602SVT

ADVANCE INFORMATION

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device V(BR)DSS RDS(on) ID

TA = 25°C

Q1 30V 60mΩ @ VGS = 10V 3.4A

100mΩ @ VGS = 4.5V 2.7A

Q2 -30V 95mΩ @ VGS = -10V -2.8A

140mΩ @ VGS = -4.5V -2.3A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Backlighting

• DC-DC Converters

• Power management functions

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reli ability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.013 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMG6602SVT-7 TSOT26 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

TSOT26

Top View Top View

1

2

3

6

5

4

D1

S1

D2

G1

S2

G2

N-Channel P-Channel

D1

S1

G1

Q1 D2

S2

G2

Q2

66C = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

66C

YM

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 2 of 10

www.diodes.com May 2012

DMG6602SVT

ADVANCE INFORMATION

Maximum Ratings – Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = 10V Steady

State TA = 25°C

TA = 70°C ID 3.4

2.7 A

Continuous Drain Current (Note 5) VGS = 4.5V Steady

State TA = 25°C

TA = 70°C ID 2.7

2.2 A

Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A

Pulsed Drain Current (Note 5) IDM 25 A

Maximum Ratings – Q2 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = -10V Steady

State TA = 25°C

TA = 70°C ID -2.8

-2.4 A

Continuous Drain Current (Note 5) VGS = -4.5V Steady

State TA = 25°C

TA = 70°C ID -2.3

-2.1 A

Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A

Pulsed Drain Current (Note 5) ID -20 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) TA = 25°C PD 0.84 W

TA = 70°C 0.52

Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 155 °C/W

t<10s 109

Total Power Dissipation (Note 5) TA = 25°C PD 1.27 W

TA = 70°C 0.8

Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 102 °C/W

t<10s 71

Thermal Resistance, Junction to Case (Note 5) R

θ

JC 34

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 3 of 10

www.diodes.com May 2012

DMG6602SVT

ADVANCE INFORMATION

Electrical Characteristics – Q1 NMOS@ TA = 25°C unless otherwise stated

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 30 - - V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current IDSS - - 1.0 µA

VDS = 24V, VGS = 0V

Gate-Source Leakage IGSS - - ±100 nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

1.0 - 2.3 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) - 38

55 60

100 mΩ VGS = 10V, ID = 3.1A

VGS = 4.5V, ID = 2A

Forward Transfer Admittance |Yfs| - 4 - S

VDS = 5V, ID = 3.1A

Diode Forward Voltage VSD - 0.8 1 V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss - 290 400

pF VDS = 15V, VGS = 0V,

f = 1.2MHz

Output Capacitance Coss - 40 80

Reverse Transfer Capacitance Crss - 40 80

Gate Resistance R

g

- 1.4 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V) Q

g

- 4 6

nC

VDS = 15V, VGS = 4.5V, ID = 3.1A

Total Gate Charge (VGS = 10V) Q

g

- 9 13 VDS = 15V, VGS = 10V, ID = 3A

Gate-Source Charge Q

g

s - 1.2 -

Gate-Drain Charge Q

g

d - 1.5 -

Turn-On Delay Time tD

(

on

)

- 3 -

ns VGS = 10V, VDS = 15V,

RG = 3Ω, RL = 4.7Ω

Turn-On Rise Time t

r

- 5 -

Turn-Off Delay Time tD

(

off

)

- 13 -

Turn-Off Fall Time tf - 3 -

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subje c t to produ ct testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SO URCE VOLTAGE(V )

Fig. 1 T ypical Output Characteristics

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

0.0

2.0

4.0

6.0

8.0

10.0

V , GA T E SOURCE VOL TAGE(V)

Fig. 2 Typical Transfer Characteristics

GS

I, D

R

A

IN

C

U

R

ENT (

A

)

D

0

2

4

6

8

10

012345

V = 5.0V

DS

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 4 of 10

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DMG6602SVT

ADVANCE INFORMATION

I , DRAIN SOURCE CURRENT

Fig. 3 T ypical On-Resistance vs.

Drain Current an d G at e Voltage

D

R

,D

R

AIN-S

O

U

R

CE

O

N-

R

ESISTANCE( )

DS(ON)

Ω

0.01

0.1

1

04 8121620

R ( ) Ave @ V =4.5V

DS(ON) G

Ω

R ( ) Ave @ V =10V

DS(ON) G

Ω

I , DRAIN SOURCE CURRENT (A)

Fig. 4 T ypical On-Resistance vs.

Drain Current and Tempera tu r e

D

R

, D

R

AIN-S

O

U

R

CE

O

N-

R

ESISTANCE( )

DS(ON)

Ω

0

0.04

0.08

0.12

0.16

02 4 6 810

V= 4.5V

GS

Ave R ( ) @ 150°C

DS(ON)

Ω

Ave R() @ -55°C

DS(ON)

Ω

Ave R ( ) @ 25°C

DS(ON)

Ω

Ave R ( ) @ 85°C

DS(ON)

Ω

Ave R ( ) @ 125°C

DS(ON)

Ω

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESIST A NCE

(Normalized)

DS(ON)

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERA TURE ( C)

J

°

Fig. 6 On-Resistance V ariation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

DS(ON)

0

0.02

0.04

0.06

0.08

0.1

0

0.4

0.8

1.6

1.2

2.4

-50 -25 0 25 50 75 100 125 150

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(th)

T , JUNCTION TEMPERA TURE ( C)

Fig . 7 Gat e Threshold Varia tion vs. Ambient Temperature

J

°

I= 250A

D

μ

I= 1mA

D

2.0

I , SOURCE CURRENT (A)

S

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLT A GE (V)

Fig. 8 Diode Forward Voltage vs. Current

SD

0

2

4

6

8

10

V(V) @ V=0V T= 25C

SD DS A

°

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 5 of 10

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DMG6602SVT

ADVANCE INFORMATION

f = 1MHz

V , DRAIN-SOURCE VOL TAGE (V)

Fig . 9 Typica l Junction Capacitance

DS

C

, J

U

N

C

T

I

O

N

C

A

P

A

C

I

T

A

N

C

E (p

F

)

T

CAve (pF)

RSS

10

100

1000

0 5 10 15 20 25 30

CAve (pF)

ISS

CAve (pF)

OSS

0

2

4

6

8

10

0246810

V = 10V

I= 3.0A

DS

D

Q(nC)

g

, TOT AL GA TE CHARGE

Fig. 10 Gate Charge

V

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS

0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 1 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

I, D

R

AIN

C

U

R

EN

T

(A)

D

R

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

A

V = 10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

P = 100µs

W

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 6 of 10

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DMG6602SVT

ADVANCE INFORMATION

Electrical Characteristics – Q2 PMOS@ TA = 25°C unless otherwise stated

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS -30 - - V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current IDSS - - -1.0 µA

VDS = -24V, VGS = 0V

Gate-Source Leakage IGSS - - ±100 nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

-1.0 - -2.3 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) - 73

99 95

140 mΩ VGS = -10V, ID = -2.7A

VGS = -4.5V, ID = -2A

Forward Transfer Admittance |Yfs| - 6 - S

VDS = -5V, ID = -2.7A

Diode Forward Voltage VSD - -0.8 -1.0 V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss - 350 420

pF VDS = -15V, VGS = 0V,

f = 1.2MHz

Output Capacitance Coss - 50 100

Reverse Transfer Capacitance Crss - 45 80

Gate Resistance R

g

- 17.1 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V) Q

g

- 4 6

nC

VDS = -15V, VGS = -4.5V, ID = -3A

Total Gate Charge (VGS = -10V) Q

g

- 7 9 VDS = -15V, VGS = -10V, ID = -3A

Gate-Source Charge Q

g

s - 0.9 -

Gate-Drain Charge Q

g

d - 1.2 -

Turn-On Delay Time tD

(

on

)

- 4.8 -

ns VGS = -10V, VDS = -15V,

RG = 6Ω, RL = 15Ω

Turn-On Rise Time t

r

- 7.3 -

Turn-Off Delay Time tD

(

off

)

- 20 -

Turn-Off Fall Time tf - 13 -

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

Fig. 12 Typical Output Characteristics

DS

0.0

2.0

4.0

6.0

8.0

I , DRAIN CURRENT

D

V , GA TE SOURCE VOLTAGE(V)

Fig. 13 Typical Transf er Charact eristics

GS

I, D

R

AI

N

C

U

R

E

N

T (A)

D

0

2

4

6

8

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 7 of 10

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DMG6602SVT

ADVANCE INFORMATION

I , DRAIN SOURCE CURRENT

Fig. 14 T ypical On-Resistance vs.

Drain Curr ent an d G ate Voltage

D

R ,DRAIN- SO URCE O N- RESISTANCE( )

DS(ON)

Ω

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

02

R ( ) Ave @ V =2.5V

DS(ON) G

Ω

R() Ave @ V=4.5V

DS(ON) G

Ω

R() Ave @ V=10V

DS(ON) G

Ω

486

02468

I , DRAIN SOURCE CURRENT (A)

Fig. 15 Typical On- Re s i s t ance vs .

Drai n Cur r e nt an d Temperature

D

R , DRAIN-S

O

URCE

O

N-RESISTANCE( )

DS(ON)

Ω

V = 4.5V

GS

0

0.04

0.08

0.12

0.16

0.2

Ave R ( ) @ 150°C

DS(ON)

Ω

Ave R() @ -55°C

DS(ON)

Ω

Ave R ( ) @ 25°C

DS(ON)

Ω

Ave R ( ) @ 85°C

DS(ON)

Ω

Ave R ( ) @ 125°C

DS(ON)

Ω

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 16 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESIST ANCE

(Normalized)

DS(ON)

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 17 On-Resista nce Var iation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0

0.04

0.08

0.12

0.16

0.2

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 18 G ate Th r eshold Var iation vs. Ambi ent Temperature

0

0.4

0.8

1.2

1.6

2

V , GATE THRESHOLD VOLTAG E (V)

GS(TH)

V , SOU RCE - DR AIN VOLTAGE (V)

SD

Fig. 19 Diode Forward Voltage vs. Current

I , SOURCE CURRENT (V)

S

0

2

4

6

8

0 0.2 0.4 0.6 0.8 1 1.2 1.4

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 8 of 10

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DMG6602SVT

ADVANCE INFORMATION

-V , DRAIN-SOURCE VOL TAGE (V)

Fig. 20 Typical Junction Capacitance

DS

C

, J

U

N

C

T

I

O

N

C

APA

C

I

T

A

N

C

E (p

F

)

T

10

100

1000

0 5 10 15 20 25 30

f = 1MHz

C Ave(pF)

ISS

C Ave(pF)

OSS

C Ave( pF)

RSS

0

2

4

6

8

10

0246810

V= -15

I=-3A

DS

D

Q(nC)

g

, TOTAL GATE CHARGE

Fig. 21 Gate Charge

-V

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

Fig . 22 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

-I , D

R

AIN

C

U

R

EN

T

(A)

D

R

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

A

V = -10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIME (sec)

Fig . 23 T r ansient Therm al Resistance

r(t), TRANSIENT THERMAL RESIST ANCE

D = 0.9

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

R (t) = r(t) * R

R = 164C/W

Duty Cycle, D = t1/ t2

θ

JA

θθ

JA JA

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 9 of 10

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DMG6602SVT

ADVANCE INFORMATION

Package Outline Dimensions

Suggested Pad Layout

TSOT26

Dim Min Max Typ

A − 1.00 −

A1 0.01 0.10 −

A2 0.84 0.90 −

D − − 2.90

E − − 2.80

E1 − − 1.60

b 0.30 0.45 −

c 0.12 0.20 −

e − − 0.95

e1 − − 1.90

L 0.30 0.50

L2 − − 0.25

θ 0° 8° 4°

θ1 4° 12° −

All Dimensions in mm

Dimensions Value (in mm)

C 0.950

X 0.700

Y 1.000

Y1 3.199

Y1

C C

X (6x)

Y (6 x)

c

A1

L

E1 E

A2

D

e1

e6x b

θ

4x 1

θ

L2

A

DMG6602SVT

Document number: DS35106 Rev. 6 - 2 10 of 10

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ADVANCE INFORMATION

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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noted herein may also be covered by one or more United States, international or foreign trademarks.

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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