BAS16HT1G BAS16HT1G Connection Diagram 2 2 A1 1 SOD-323 1 Small Signal Diode Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 85 Units V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 200 mA TSTG Storage Temperature Range 600 mA -65 to +150 TJ Operating Junction Temperature -55 to +150 C C * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD Power Dissipation Parameter RJA Thermal Resistance, Junction to Ambient Electrical Characteristics Value 200 Units mW 600 C/W TA=25C unless otherwise noted Symbol VR Parameter Breakdown Voltage Test Conditions IR = 5.0A VF Forward Voltage IR Max. Units V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA 715 855 1.0 1.25 mV mV V V Reverse Leakage VR = 75V VR = 25V, TA = 150C VR = 75V, TA = 150C 1.0 30 50 A A A CT Total Capacitance VR = 0, f = 1.0MHz 2.0 pF trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100 6.0 ns (c)2004 Fairchild Semiconductor Corporation Min. 85 BAS16HT1G, Rev. A BAS16HT1G Typical Characteristics 300 Ta= 25C Reverse Current, IR [nA] Ta= 25C 250 140 200 150 130 100 120 50 0 10 R Reverse Voltage, VR [v] 150 110 1 2 3 5 10 20 30 Reverse Current, IR [uA] 50 100 400 350 300 250 225 1 2 3 F 5 10 20 30 Forward Current, IF [uA] 50 725 Ta= 25C 700 650 600 550 500 450 0.1 1.2 1 0.8 5 10 Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA Total Capacitance, C T [pF] Ta= 25C 0.2 0.3 0.5 1 2 3 Forward Current, IF [mA] 1.3 Ta= 25 C 1.2 1.1 F Forward Voltage, VF [V] 1.4 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V 100 Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100A 1.5 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Forward Voltage, VF [mV] 485 Ta= 25C 450 70 F F Forward Voltage, VF [mV] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100A 20 30 50 Reverse Voltage, VR [v] 0.6 10 1 20 30 50 100 200 300 Forward Current, IF [mA] 500 Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA (c)2004 Fairchild Semiconductor Corporation 0 2 4 6 8 10 Reverse Voltage [V] 12 14 15 Figure 6. Total Capacitance BAS16HT1G, Rev. A Reverse Recovery Time, trr [ns] 4 (Continued) 500 IR 400 Ta= 25C C u rre n t [m A ] 3.5 3 2.5 2 OR WA R 300 300 IF 200 200 100 1.5 -F 400 100 (A V - A D CU R RE NT ST EA D Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T IF -m IE D IE D C A CU URR E NRTR E - mNAT ) mA D 1 10 BAS16HT1G Typical Characteristics 20 30 40 Reverse Current [mA] 50 0 0 60 0 50 0 50 100 100 150 150 o o A Ambient Temperature, TA [ C] IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10mA vs 60mA Figure 8. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA) Power Dissipation, PD [mW] 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 SOD-323 Pkg 100 0 0 50 100 150 200 o Average Temperature, Io [ C] Figure 9. Power Derating Curve (c)2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A BAS16HT1G Package Dimension SOD-323 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation BAS16HT1G, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2004 Fairchild Semiconductor Corporation Rev. I11