HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 1/5 MICROELECTRONICS CORP. HTIP112A SILICON NPN POWER DARLINGTON TRANSISTOR * Monolithic Darlington Configuration * Integrated Antiparallel Collector-Emitter Diode Description The devices is a sillcon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications. TO-92 Applications Linear and Switching Industrial Equipment Absolute Maximum Ratings Symbol Parameter Value Unit VCBO Collector-Base Voltage(IE=0) 100 V VCEO Collector-Emitter Voltage(IB=0) 100 V VEBO Emitter-Base Voltage(IC=0) 5 V IC Collector Current 2 A ICM Collector Peak Current 4 A IB Base Current 50 mA Ptot Tstg Tj o Total Dissipation at Tamb=25 C 1.2 Storage Temperature W -65 to 150 o C 150 o C Max. Operating Junction Temperature Thermal Data Rthj-amb Thermal Resistance Junction-ambient (Max.) o 104 C/W Electrical Characteristics (Tcase=25C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEO Collector Cut-off Current (IB=0) VCE=50V - - 2 mA ICBO Collector Cut-off Current (IE=0) VCB=100V - - 1 mA IEBO Emitter Cut-off Current (IC=0) VEB=5V - - 2 mA VCE(sus) Collector-Emitter Sustaining Voltage (IB=0) IC=30mA 100 - - V *VCE(sat) Collector-Emitter Saturation Voltage IC=2A, IB=8mA - - 2.5 V *VBE Base-Emitter Voltage IC=2A, VCE=4V - - 2.8 V *hFE DC Current Gain IC=1A, VCE=4V IC=2A, VCE=4V 1000 500 - - *Pulse Test: Pulse Width 380us, Duty Cycle2% HTIP112A HSMC Product Specification HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Current Gain & Collector Current 100 10 o 75 C 1 1 hFE (x1000) hFE (x1000) 10 o 25 C o 125 C o 75 C o 125 C 0.1 o 25 C 0.1 hFE @ VCE=3V hFE @ VCE=4V 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 Collector Current-IC (A) Saturation Voltage & Collector Current 10 100 Saturation Voltage (V) Saturation Voltage (V) 1 Saturation Voltage & Collector Current 100 o 75 C 10 o 25 C 1 o 125 C 0.1 0.001 o 75 C 10 o 25 C 1 o 125 C VCE(sat) @ IC=250IB VCE(sat) @ IC=100IB 0.01 0.1 1 0.1 0.001 10 0.01 0.1 1 10 Collector Current-IC (A) Collector Current-IC (A) Saturation Voltage & Collector Current ON Voltage & Collcetor Current 10 10 o 1 o ON Voltage (V) Saturation Voltage (V) 0.1 Collector Current-IC (A) o 125 C 75 C o 25 C 75 C o 25 C 1 o 125 C 0.1 VBE(ON) @ VCE=4V VBE(sat) @ IC=250IB 0.01 0.001 0.01 0.1 Collector Current-IC (A) HTIP112A 1 10 0.1 0.001 0.01 0.1 1 10 Collector Current-IC (A) HSMC Product Specification HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 3/5 MICROELECTRONICS CORP. ON Voltage & Collcetor Current Capcitance & Reverse-Biased Voltage 100.0 10 Capacitance (pF) ON Voltage (V) o 75 C o 25 C 1 o 125 C Cob VBE(ON) @ VCE=3V 0.1 0.001 10.0 0.01 0.1 1 10 Collector Current-IC (A) 0.1 1 10 100 Reverse Biased Voltage (V) Safe Operating Area 10 Collector Current-IC (A) PT=1mS PT=100mS 1 PT=1S 0.1 0.01 1 10 100 1000 Forward Voltage (V) HTIP112A HSMC Product Specification HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 4/5 MICROELECTRONICS CORP. TO-92 Dimension 2 A DIM A B C D E F G H I 1 2 3 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 2 3 3 H T I P 1 1 2 A Control Code Date Code Note: Green label is used for pb-free packing C D Pin Style: 1.Emitter 2.Collector 3.Base H Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5 *2 *2 *: Typical, Unit: mm 1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP112A HSMC Product Specification HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec <3oC/sec <3oC/sec Time maintained above: - Temperature (TL) - Time (tL) 183oC 60~150 sec 217oC 60~150 sec Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC Time within 5oC of actual Peak Temperature (tP) 10~30 sec 20~40 sec Ramp-down Rate <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C 5 C 5sec 1sec Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time 25oC to Peak Temperature o 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HTIP112A o o o o 260 C +0/-5 C 5sec 1sec HSMC Product Specification