IGBT - SMPS 600 V, 40 A HGTG20N60A4 Description The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating. www.onsemi.com C Features * * * * * 40 A, 600 V @ TC = 110C Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A Typical Fall Time: 55 ns at TJ = 125C Low Conduction Loss This is a Pb-Free Device G E Applications E * UPS, Welder C G TO-247-3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K 20N60A4 $Y &Z &3 &K 20N60A4 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2005 February, 2020 - Rev. 3 1 Publication Order Number: HGTG20N60A4/D HGTG20N60A4 ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified) Parameter Collector to Emitter Voltage Collector Current Continuous Symbol Ratings Unit BVCES 600 V IC 70 A 40 A TC = 25C TC = 110C Collector Current Pulsed (Note 1) ICM 280 A Gate to Emitter Voltage Continuous VGES 20 V Gate to Emitter Voltage Pulsed VGEM 30 V Switching Safe Operating Area at TJ = 150C (Figure 2) SSOA 100 A at 600V PD 290 W 2.32 W/C TJ, TSTG -55 to +150 C TL TPKG 300 260 C C Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Package Body for 10 s, See Techbrief 334 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Shipping HGTG20N60A4 20N60A4 TO-247-3LD 450 / Tube ELECTRICAL SPECIFICATIONS (TC = 25C, unless otherwise noted) Parameter Symbol Collector to Emitter Breakdown Voltage BVCES Emitter to Collector Breakdown Voltage BVECS Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES Test Conditions Min Typ Max Unit IC = 250 A, VGE = 0 V, 600 - - V IC = -10 mA, VGE = 0 V 20 - - V TJ = 25C - - 250 A TJ = 125C - - 2.0 mA TJ = 25C - 1.8 2.7 V TJ = 125C - 1.6 2.0 V 4.5 5.5 7.0 V - - 250 nA 100 - - A - 8.6 - V VGE = 15 V - 142 162 nC VGE = 20 V - 182 210 nC - 15 - ns - 12 - ns - 73 - ns - 32 - ns - 105 - J - 280 350 J 150 200 J VCE = 600 V IC = 20 A, VGE = 15 V IC = 250 A, VCE= 600 V VGE = 20 V Switching SOA SSOA TJ = 150C, RG = 3 VGE = 15 V, L = 100 H, VCE = 600 V Gate to Emitter Plateau Voltage VGEP IC = 20 A, VCE = 300 V On-State Gate Charge Qg(ON) IC = 20 A, VCE = 300 V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time td(ON)I trI td(OFF)I tfI Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 Turn-Off Energy (Note 3) EOFF IGBT and Diode at TJ = 25C, ICE = 20 A, VCE = 390 V, VGE = 15 V, RG = 3 , L = 500 H, Test Circuit (Figure 20) www.onsemi.com 2 HGTG20N60A4 ELECTRICAL SPECIFICATIONS (TC = 25C, unless otherwise noted) (continued) Parameter Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Symbol td(ON)I trI td(OFF)I tfI Test Conditions IGBT and Diode at TJ = 125C, ICE = 20 A, VCE = 390 V, VGE = 15 V, RG = 3 , L = 500 H, Test Circuit (Figure 20) Min Typ Max Unit - 15 21 ns - 13 18 ns - 105 135 ns - 55 73 ns 115 - J Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 - 510 600 J Turn-Off Energy (Note 3) EOFF - 330 500 J Thermal Resistance, Junction-Case RJC - - 0.43 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. www.onsemi.com 3 HGTG20N60A4 TYPICAL PERFORMANCE CURVES (unless otherwise specified) VGE = 15 V 80 Package Limit 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150 120 TJ = 150C, RG = 3 , VGE = 15 V, L = 100 H 100 80 60 40 20 0 TC / 75C VGE / 15 V 100 40 tsc, Short Circuit Withstand Time (s) fMAX, Operating Frequency (kHz) TJ = 125C, RG = 3 , L = 500 H, VCE = 390 V 300 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = Conduction Dissipation (Duty Factor = 50%) RJC = 0.43C/W, See Notes 10 20 30 ICE, Collector to Emitter Current (A) 5 40 14 12 8 300 6 250 4 0 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) TJ = 125C 0 0.4 200 tsc 2 150 10 11 12 13 14 15 100 VGE, Gate to Emitter Voltage (V) 60 TJ = 150C 350 Figure 4. Short Circuit Withstand Time 80 20 400 Isc 10 0 50 Duty Cycle < 0.5%, VGE = 12 V Pulse Duration = 250 s 40 700 450 VCE = 390 V, RG = 3 , TJ = 125C Figure 3. Operating Frequency vs. Collector to Emitter Current 100 200 300 400 500 600 VCE, Collector to Emitter Voltage (V) Figure 2. Minimum Switching Safe Operating Area Figure 1. DC Collector Current vs. Case Temperature 500 100 0 Isc, Peak Short Circuit Current (A) DIE CAPPABILITY ICE, Collector to Emitter Current (A) ICE, DC Collector Current (A) 100 TJ = 25C 1.6 2.0 2.4 2.8 0.8 1.2 VCE, Collector to Emitter Voltage (V) 100 80 60 40 TJ = 125C 20 0 3.2 Duty Cycle < 0.5%, VGE = 15 V Pulse Duration = 250 s Figure 5. Collector to Emitter On-State Voltage TJ = 150C 0 0.4 TJ = 25C 0.8 1.2 1.6 2.0 VCE, Collector to Emitter Voltage (V) Figure 6. Collector to Emitter On-State Voltage www.onsemi.com 4 2.4 HGTG20N60A4 TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued) RG = 3 , L = 500 H, VCE = 390 V EOFF, Turn-Off Energy Loss (J) EON2, Turn-On Energy Loss (J) 1400 1200 1000 TJ = 125C, VGE = 12 V, VGE = 15 V 800 600 400 200 TJ = 25C, VGE = 12 V, VGE = 15 V 0 5 10 25 30 35 15 20 ICE, Collector to Emitter Current (A) 800 600 400 300 200 100 trI, Rise Time (ns) td(ON)I, Turn-On Delay Time (ns) 18 16 14 TJ = 25C, TJ = 125C, VGE = 15 V 10 8 28 15 20 25 35 30 ICE, Collector to Emitter Current (A) TJ = 25C, TJ = 125C, VGE = 12 V 20 16 12 TJ = 25C or TJ = 125C, VGE = 15 V 8 10 5 120 15 20 25 30 35 ICE, Collector to Emitter Current (A) 4 40 80 15 20 25 30 35 40 RG = 3 , L = 500 H, VCE = 390 V 72 tfI, Fall Time (ns) VGE = 12 V, VGE = 15 V, TJ = 125C 90 80 60 10 ICE, Collector to Emitter Current (A) 110 64 TJ = 125C, VGE = 12 V or 15 V 56 48 40 TJ = 25C, VGE = 12 V or 15 V 32 VGE = 12 V, VGE = 15 V, TJ = 25C 70 5 Figure 10. Turn-On Rise Time vs. Collector to Emitter Current RG = 3 , L = 500 H, VCE = 390 V 100 40 24 Figure 9. Turn-On Delay Time vs. Collector to Emitter Current td(OFF), Turn-Off Delay Time (ns) 10 RG = 3 , L = 500 H, VCE = 390 V 32 TJ = 25C, TJ = 125C, VGE = 12 V 12 5 36 RG = 3 , L = 500 H, VCE = 390 V 20 TJ = 25C, VGE = 12 V or 15 V Figure 8. Turn-Off Energy Loss vs. Collector to Emitter Current Figure 7. Turn-On Energy Loss vs. Collector to Emitter Current 22 TJ = 125C, VGE = 12 V or 15 V 500 0 40 RG = 3 , L = 500 H, VCE = 390 V 700 24 5 10 20 25 30 35 15 ICE, Collector to Emitter Current (A) 16 40 5 10 15 20 25 30 35 ICE, Collector to Emitter Current (A) Figure 12. Fall Time vs. Collector to Emitter Current Figure 11. Turn-Off Delay Time vs. Collector to Emitter Current www.onsemi.com 5 40 HGTG20N60A4 240 16 Duty Cycle < 0.5%, VCE = 10 V Pulse Duration = 250 s 200 VGE, Gate to Emitter Voltage (V) ICE, Collector to Emitter Current (A) TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued) 160 120 TJ = 25C 80 TJ = 125C TJ = -55C 40 0 7 6 9 11 8 10 VGE, Gate to Emitter Voltage (V) VCE = 600 V 12 10 VCE = 200 V 6 4 2 0 ETOTAL, Total Switching Energy Loss (mJ) ETOTAL, Total Switching Energy Loss (mJ) RG = 3 , L = 500 H, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF 1.6 1.4 1.2 ICE = 30 A 1.0 0.8 ICE = 20 A 0.6 0.4 ICE = 10 A 0.2 0 25 50 75 100 125 TC, Case Temperature (C) 150 VCE, Collector to Emitter Voltage (V) C, Capacitance (nF) Frequency = 1 MHz CIES 2 1 0 COES CRES 0 40 60 80 20 VCE, Collector to Emitter Voltage (V) 80 100 120 60 QG, Gate Charge (nC) 160 140 10 ICE = 30 A 1 ICE = 20 A ICE = 10 A 0.1 3 10 1000 100 RG, Gate Resistance () Figure 16. Total Switching Loss vs. Gate Resistance 4 3 40 TJ = 125C, L = 500 H, VCE = 390 V, VGE = 15 V ETOTAL = EON2 + EOFF Figure 15. Total Switching Loss vs. Case Temperature 5 20 Figure 14. Gate Charge Waveforms Figure 13. Transfer Characteristic 1.8 VCE = 400 V 8 0 12 IG(REF) = 1 mA, RL = 15 , TJ = 25C 14 100 2.2 Duty Cycle < 0.5%, TJ = 25C Pulse Duration = 250 s, 2.1 2.0 ICE = 30 A 1.9 ICE = 20 A 1.8 ICE = 10 A 1.7 Figure 17. Capacitance vs. Collector to Emitter Voltage 8 9 13 14 11 12 10 VGE, Gate to Emitter Voltage (V) 15 Figure 18. Collector to Emitter On-State Voltage vs. Gate to Emitter Voltage www.onsemi.com 6 16 HGTG20N60A4 ZJC, Normalized Thermal Response TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued) 100 0.5 0.2 10-1 0.1 t1 0.05 PD 0.02 0.01 10-2 t2 Duty Factor, D = t1/t2 Peak TJ = (PD x ZJC x RJC) + TC Single Pulse 10-4 10-5 10-1 10-3 10-2 t1, Rectangular Pulse Duration (s) 100 Figure 19. IGBT Normalized Transient Thermal Response, Junction to Case TEST CIRCUIT AND WAVEFORMS HGTG20N60A4D DIODE TA49372 90% 10% VGE EON2 L = 500 H EOFF VCE RG = 3 90% + - VDD = 390 V ICE 10% td(OFF)I tfI trI td(ON)I Figure 21. Switching Test Waveforms Figure 20. Inductive Switching Test Circuit www.onsemi.com 7 HGTG20N60A4 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDt LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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