Vishay Semiconductors
TLHG/R/Y640.
Document Number 83219
Rev. 1.6, 24-Sep-07
www.vishay.com
1
High Efficiency LED in ∅ 5 mm Tinted Diffused Package
FEATURES
• Choice of three bright colors
• Standard T-1¾ package
• Small mechanical tolerances
• Suitable for DC and high peak current
• Wide viewing angle
• Luminous intensity categorized
• Yellow and green color categorized
• TLH.64.. without stand-offs
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
19224
e2
DESCRIPTION
The TLH.64.. series was developed for standard
applications like general indicating and lighting
purposes.
It is housed in a 5 mm tinted diffused plastic package.
The wide viewing angle of these devices provides a
high on-off contrast.
Several selection types with different luminous
intensities are offered. All LEDs are categorized in
luminous intensity groups. The green and yellow LEDs
are categorized additionally in wavelength groups.
That allows users to assemble LEDs with uniform
appearance.
APPLICATIONS
• Status lights
• Off/on indicator
• Background illumination
• Readout lights
• Maintenance lights
• Legend light
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 5 mm
• Product series: standard
• Angle of half intensity: ± 30°
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLHR6400 Red, IV = 3.5 mcd (typ.) GaAsP on GaP
TLHR6401 Red, IV = 7 mcd (typ.) GaAsP on GaP
TLHR6405 Red, IV = 10 mcd (typ.) GaAsP on GaP
TLHY6400 Ye l l ow, I V = 3.5 mcd (typ.) GaAsP on GaP
TLHY6401 Ye l l ow, I V = 7 mcd (typ.) GaAsP on GaP
TLHY6405 Ye l l ow, I V = 10 mcd (typ.) GaAsP on GaP
TLHG6400 Green, IV = 4 mcd (typ.) GaP on GaP
TLHG6401 Green, IV = 7 mcd (typ.) GaP on GaP
TLHG6405 Green, IV > 15 mcd (typ.) GaP on GaP
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Document Number 83219
Rev. 1.6, 24-Sep-07
Vishay Semiconductors
TLHG/R/Y640.
Note:
1) Tamb = 25 °C, unless otherwise specified
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmin/IVmax ≤ 0.5
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmin/IVmax ≤ 0.5
ABSOLUTE MAXIMUM RATINGS1) TLHR64.. , TLHY64.. , TLHG64.. ,
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR6V
DC Forward current Tamb ≤ 65 °C IF30 mA
Surge forward current tp ≤ 10 µs IFSM 1A
Power dissipation Tamb ≤ 65 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 20 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient RthJA 350 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLHR64.., RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA
TLHR6400 IV1.6 3.5 mcd
TLHR6401 IV47 mcd
TLHR6405 IV6.3 10 mcd
Dominant wavelength IF = 10 mA λd612 625 nm
Peak wavelength IF = 10 mA λp635 nm
Angle of half intensity IF = 10 mA ϕ± 30 deg
Forward voltage IF = 20 mA VF23V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLHY64.., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA
TLHY6400 IV1.6 3.5 mcd
TLHY6401 IV47 mcd
TLHY6405 IV6.3 10 mcd
Dominant wavelength IF = 10 mA λd581 594 nm
Peak wavelength IF = 10 mA λp585 nm
Angle of half intensity IF = 10 mA ϕ± 30 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Document Number 83219
Rev. 1.6, 24-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLHG/R/Y640.
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one packing unit IVmin/IVmax ≤ 0.5
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLHG64.., GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 10 mA
TLHG6400 IV1.6 4 mcd
TLHG6401 IV47 mcd
TLHG6405 IV6.3 15 mcd
Dominant wavelength IF = 10 mA λd562 575 nm
Peak wavelength IF = 10 mA λp565 nm
Angle of half intensity IF = 10 mA ϕ± 30 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10 µA VR615 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
125
95 10918
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
0 10080604020
0
10
20
30
40
60
95 10046
50
I
F
- Forward Current (mA)
0 10080604020
T
amb
- Ambient Temperature (°C)
Figure 3. Forward Current vs. Pulse Length
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
0.01 0.1 1 10
1
10
100
1000
10000
100
95 10025
0.02
0.05
0.1
0.2
1
0.5
Tamb85°C
≤
tp/T = 0.01
IF - Forward Current (mA)
tP - Pulse Length (ms)
0.4 0.2 0 0.2 0.4 0.6
95 10042
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
Vrel
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Document Number 83219
Rev. 1.6, 24-Sep-07
Vishay Semiconductors
TLHG/R/Y640.
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
red
tp/T = 0.001
tp=10µs
0.1
1
10
100
1000
95 10026 VF- Forward Voltage (V)
I - Forward Current (mA)
F
1086420
0
0
0.4
0.8
1.2
1.6
95 10027
20 40 60 80100
I - Relative Luminous Intensity
vrel
T
amb
- Ambient Temperature (°C)
IF= 10 mA
red
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF (mA)
tP/T
2.0
IV rel - Relative Luminous Intensity
red
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 9. Relative Intensity vs. Wavelength
Figure 10. Forward Current vs. Forward Voltage
0.01
0.1
1
10
I
F
- Forward Current (mA)
10010
95 10029
I - Relative Luminous Intensity
vrel
red
1
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1
.
2
690
95 10040 λ - Wavelength (nm)
1.0
red
I - Relative Luminous Intensity
Vr el
0.1
1
10
100
1000
1086420
95 10030 VF- Forward Voltage (V)
I- Forward Current (mA)
F
yellow
tp/T = 0.001
tp=10 µs
Document Number 83219
Rev. 1.6, 24-Sep-07
www.vishay.com
5
Vishay Semiconductors
TLHG/R/Y640.
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 13. Relative Luminous Intensity vs. Forward Current
0
0
0.4
0.8
1.2
1.6
95 10031
20 40 60 80100
I - Relative Luminous Intensity
vrel
Tamb- Ambient Temperature (°C)
yellow
IF= 10 mA
yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10260
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
vrel
2.0
yellow
IF- Forward Current (mA)
100
0.1
1
10
95 10033
I - Relative Luminous Intensity
vrel
101
0.01
Figure 14. Relative Intensity vs. Wavelength
Figure 15. Forward Current vs. Forward Voltage
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
λ - Wavelength (nm)
1.0
yellow
I
V rel
- Relative Luminous Intensity
0.1
1
10
100
1000
1086420
95 10034 VF- Forward Voltage (V)
I - Forward Current (mA)
F
green
tp/T = 0.001
tp=10 µs
0
0.4
0.8
1.2
1.6
95 10035
I - Relative Luminous Intensity
vrel
green
IF= 10 mA
Tamb- Ambient Temperature (°C)
20 40 60 800 100
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Document Number 83219
Rev. 1.6, 24-Sep-07
Vishay Semiconductors
TLHG/R/Y640.
Figure 17. Specific Luminous Intensity vs. Forward Current
Figure 18. Relative Luminous Intensity vs. Forward Current
Figure 19. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v rel
2.0
green
I - Specific Luminous Intensity
IF (mA)
0.5 0.2 0.1 0.05 0.021 tp/T
I
F
- Forward Current (mA)
100
green
0.1
1
10
95 10037
I - Relative Luminous Intensity
vrel
101
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038λ - Wavelength (nm)
1.0
green
I - Relative Luminous Intensity
Vrel
Document Number 83219
Rev. 1.6, 24-Sep-07
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7
Vishay Semiconductors
TLHG/R/Y640.
PACKAGE DIMENSIONS in millimeters
95 10917
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Document Number 83219
Rev. 1.6, 24-Sep-07
Vishay Semiconductors
TLHG/R/Y640.
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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therein, which apply to these products.
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