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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
SILICON POWER MOS FET
NE5500134
N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS
Document No. PU10404EJ02V0DS (2nd edition)
Date Published August 2007 NS
Printed in Japan
2004, 2007
DESCRIPTION
The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6
μ
m WSi gate
lateral MOS FET), housed in a surface mount 3-pin power minimold (34 PKG) (SOT-89 type) package. The device
can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage.
FEATURES
High output power : Pout = 29.5 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
High power added efficiency :
η
add = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
High linear gain : GL = 13 dB TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 10 dBm)
Surface mount package : 3-pin power minimold (34 PKG) (SOT-89 type)
Single supply : VDS = 3.0 to 6.0 V
APPLICATIONS
Digital cellular phones : Driver amplifiers for DCS1800/PCS1900 handsets
Others : General purpose amplifiers for 0.8 to 2.0 GHz TDMA applications
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
NE5500134 NE5500134-AZ 3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free : External
solder plating)
• Magazine case
• Qty 25 pcs/case
NE5500134-T1 NE5500134-T1-AZ 3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free : External
solder plating)
V1
• 12 mm wide embossed taping
• Source pin face the perforation side of the tape
• Qty 1 kpcs/reel
Remarks 1. To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500134
2. This product is containing Pb-material inside.
<R>
Data Sheet PU10404EJ02V0DS
2
NE5500134
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 20 V
Gate to Source Voltage VGS 6.0 V
Drain Current ID 0.5 A
Total Power Dissipation Ptot 10 W
Channel Temperature Tch 125 °C
Storage Temperature Tstg 65 to +125 °C
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 3.0 4.8 6.0 V
Gate to Source Voltage VGS 0 2.0 3.5 V
Drain Current ID Duty Cycle 50%, Ton 1 s 0.3 0.5 A
Input Power Pin f = 1.9 GHz, VDS = 4.8 V 20 dBm
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Leakage Current IGSO VGS = 6.0 V 100 nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS VDS = 8.5 V 100 nA
Gate Threshold Voltage Vth VDS = 4.8 V, IDS = 1 mA 1.0 1.45 2.0 V
Thermal Resistance Rth Channel to Case 10 °C/W
Transconductance gm VDS = 4.8 V, IDS = 250 mA 410 mS
Drain to Source Breakdown Voltage BVDSS IDSS = 10
μ
A 20 24
V
Output Power Pout 28.5 29.5
dBm
Drain Current ID 0.3 A
Power Added Efficiency
η
add 48 55 %
Linear Gain Note GL
f = 1.9 GHz, VDS = 4.8 V,
Pin = 20 dBm,
IDset = 200 mA (RF OFF)
13.0 dB
Note P
in = 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
Data Sheet PU10404EJ02V0DS 3
NE5500134
TYPICAL CHARACTERISTICS (TA = +25°C, f = 1.9 GHz, IDset = 200 mA, unless otherwise specified)
Input Power P
in
(dBm)
OUTPUT POWER vs. INPUT POWER
Output Power P
out
(dBm)
35
20
30
25
15
10 2515105020
V
DS
= 4.8 V
V
DS
= 5.8 V
η
Input Power P
in
(dBm)
POWER ADDED EFFICIENCY vs. INPUT POWER
Power Added Efficiency
add
(%)
100
40
80
60
20
02515105020
V
DS
= 4.8 V
V
DS
= 5.8 V
Input Power P
in
(dBm)
DRAIN CURRENT vs. INPUT POWER
Drain Current I
D
(mA)
500
200
400
300
100
02515105020
V
DS
= 4.8 V
V
DS
= 5.8 V
V
GS
= 10 V MAX.
Step = 1.0 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
3.5
1.0
1.5
3.0
2.0
2.5
0.5
0161412108624
V
DS
= 4.8 V
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Set Drain Current I
Dset
(mA)
Gate to Source Voltage V
GS
(V)
1 000
10
100
1
0.1 3.02.52.01.51.0
Remark The graphs indicate nominal characteristics.
<R>
Data Sheet PU10404EJ02V0DS
4
NE5500134
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
(Bottom View) (Side View) (Top View)
PIN CONNECTIONS
1. Drain
2. Source
3. Gate
V1
1
2
2
3
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
2
13
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
Data Sheet PU10404EJ02V0DS 5
NE5500134
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
<R>
NE5500134
The information in this document is current as of August, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":