© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5 1Publication Order Number:
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
•225 mW Rating on FR−4 or FR−5 Board
•Zener Breakdown Voltage Range − 2.4 V to 75 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 kV) per Human Body Model
•Peak Power − 225 W (8 X 20 ms)
•Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°CPpk 225 W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Total Power Dissipation on Alumina Sub-
strate, (Note 3) @ TA = 25°C
Derated above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg −65 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
3
Cathode 1
Anode
BZX84CxxxET1 SOT−23 3000/Tape & Reel
MARKING DIAGRAM
BZX84CxxxET3 SOT−23 10,000/Tape & Ree
l
3
12
http://onsemi.com
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 o
f
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxET1G SOT−23
(Pb−Free) 3000/Tape & Reel
1
xxx M G
G
BZX84CxxxET3G SOT−23
(Pb−Free) 10,000/Tape & Ree
l
xxx = Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
BZX84C2V4ET1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
QVZMaximum Temperature Coefficient of VZ
CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
BZX84C2V4ET1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device* Device
M
arkin
g
VZ1 (V)
@I
ZT1 =5mA
(Note 4) ZZT1
(W)
@ IZT1
=
5 mA
VZ2 (V)
@I
ZT2 =1
mA
(Note 4) ZZT2
(W)
@ IZT2
=
1 mA
VZ3 (V)
@I
ZT3=20 mA
(Note 4) ZZT3
(W)
@
IZT3=
20 mA
Max
Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1=5 mA C (pF)
@
VR = 0
f =
1 MHz
Min Nom Max Min Max Min Max VR
(V)
IR
mA@Min Max
BZX84C2V4ET1, G BA1 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1.0 −3.5 0 450
BZX84C2V7ET1, G BA2 2.5 2.7 2.9 100 1.9 2.4 600 3.0 3.6 50 20 1.0 −3.5 0 450
BZX84C3V0ET1, G BA3 2.8 3.0 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1.0 −3.5 0 450
BZX84C3V3ET1, G BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5.0 1.0 −3.5 0 450
BZX84C3V6ET1, G BA5 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 −3.5 0 450
BZX84C3V9ET1, G BA6 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 −3.5 −2.5 450
BZX84C4V3ET1, G BA7 4.0 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 −3.5 0 450
BZX84C4V7ET1, G BA9 4.4 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 −3.5 0.2 260
BZX84C5V1ET1, G BB1 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 −2.7 1.2 225
BZX84C5V6ET1, G BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 −2 2.5 200
BZX84C6V2ET1, G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185
BZX84C6V8ET1, G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155
BZX84C7V5ET1, G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140
BZX84C8V2ET1, G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135
BZX84C9V1ET1, G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130
BZX84C10ET1, G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130
BZX84C11ET1, G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130
BZX84C12ET1, G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130
BZX84C13ET1, G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120
BZX84C15ET1, G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110
BZX84C16ET1, G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105
BZX84C18ET1, G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100
BZX84C20ET1, G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85
BZX84C22ET1, G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85
BZX84C24ET1, G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80
Device Device
M
arkin
g
VZ1 Below
@I
ZT1 =2mA ZZT1
Below
@ IZT1
=
2 mA
VZ2 Below
@I
ZT2 =
0.1 mA ZZT2
Below
@ IZT4
=
0.5 mA
VZ3 Below
@I
ZT3 =10mA ZZT3
Below
@ IZT3
=
10 mA
Max
Reverse
Leakage
Current
qVZ
(mV/k)
Below
@ IZT1 = 2
mA C (pF)
@ VR
= 0
f =
1 MHz
Min Nom Max Min Max Min Max VR
(V)
IR
mA@Min Max
BZX84C27ET1, G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C30ET1 BD1 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
BZX84C33ET1, G BD2 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
BZX84C36ET1, G BD3 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
BZX84C39ET1, G BD4 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45
BZX84C43ET1, G BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
BZX84C47ET1, G BD5 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40
BZX84C51ET1, G BD6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56ET1, G BD7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62ET1, G BD8 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35
BZX84C68ET1, G BD9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75ET1, G BE1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C
*The “G” suffix indicates Pb−Free package available.
BZX84C2V4ET1 Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 10
0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 255C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1
.2
1.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
BZX84C2V4ET1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
IR, LEAKAGE CURRENT ( A)μ
9
0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25°C
−55°C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 9. 8 × 20 ms Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 ms
TA = 25°C
TA = 25°C
BZX84C2V4ET1 Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
bC
L
D
A
E
A1
e
3
12
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.35 0.54 0.69 0.014
2.10 2.40 2.64 0.083
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
HE
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.021 0.029
0.094 0.104
NOM MAX
HE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
BZX84C2V4ET1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
