D1NS4
40V 1A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
Unit : mm
RATINGS
SHINDENGEN
Tj150
PRRSM avalanche guaranteed
5 mm pitch mounting applicable
FEATURES
APPLICATION
Switching power supply
DC/DC converter
Home Appliances, Office Equipment
Telecommunication
Schottky Rectifiers (SBD) Single
Absolute Maximum Ratings (If not specified Tl=25)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`150
Operating Junction Temperature Tj 150
Maximum Reverse Voltage VRM 40 V
Re
p
etitive Peak Sur
g
e Reverse Volta
ge
VRRSM Pulse width 0.5ms
,
dut
y
1/40 45 V
Average Rectified Forward Current IO50Hz sine wave
,
Ta=591A
Peak Surge Forward Current IFSM 50Hz sine wave
,
Non-re
p
etitive 1 c
y
cle
p
eak value
,
T
j
=125 30 A
Repetitive Peak Surge Reverse Power PRRSM Pulse width 10
Ê
s
,
T
j
=2560 W
Electrical Characteristics (If not specified Tl=25)
Item Symbol Conditions Ratings Unit
Forward Voltage VFIF=1A, Pulse measurement Max.0.55 V
Reverse Current IRVR=40V, Pulse measurement Max.0.8 mA
Junction Capacitance Cj f=1MHz, VR=10V T
yp
.50
p
F
Thermal Resistance Æjl
j
unction to lead Max.10 /W
Æja
j
unction to ambient, On P.C.B. Max.113
Forward Voltage
0.1
1
10
00.2 0.4 0.6 0.8 1 1.2 1.4 1.6
D1NS4
Tl=150°C [MAX]
Tl=25°C [MAX]
Pulse measurement per diode
Tl=150°C [TYP]
Tl=25°C [TYP]
Forward Voltage VF [V]
Forward Current IF [A]
10
100
D1NS4
0.1 1 10
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Reverse Voltage VR [V]
Junction Capacitance Cj [pF]
f=1MHz
Tl=25°C
TYP
per diode
Junction Capacitance
Reverse Current
0.01
0.1
1
10
100
1000
010 20 30 40 50 60
D1NS4
Tl=150°C [MAX]
Tl=150°C [TYP]
Pulse measurement per diode
Tl=125°C [TYP]
Tl=100°C [TYP]
Tl=75°C [TYP]
Reverse Voltage VR [V]
Reverse Current IR [mA]
0
0.5
1
1.5
2
010 20 30 40 50
D1NS4
0.3
Reverse Power Dissipation
Tj = 150°C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
0
tp
VR
T
D=tp/T
Reverse Voltage VR [V]
Reverse Power Dissipation PR [W]
0tp
IO
T
D=tp/T
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
D1NS4
0.3
Forward Power Dissipation
Tj = 150°C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current IO [A]
Forward Power Dissipation PF [W]
0
tp
IO
T
D=tp/T
0
0.5
1
1.5
2
020 40 60 80 100 120 140 160
D1NS4
0.3
Derating Curve
VR = 20V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
VR
l
PCB
l = 24mm
Ambient Temperature Ta [°C]
Average Rectified Forward Current IO [A]
Peak Surge Forward Capability
0
10
20
30
40
50
1 10 100
D1NS4
2 5 20 50
IFSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current IFSM
[A]
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
tp
IRP
0
VR
0.5IRP VRP
IR
PRRSM = IRP × VRP
0
20
40
60
80
100
120
050 100 150
SBD Repetitive Surge Reverse Power Derating Curve
Junction Temperature Tj [°C]
PRRSM
Derating [%]
0.1
1
10
1 10 100
SBD Repetitive Surge Reverse Power Capability
Pulse Width tp [µs]
PRRSM
(tp) / PRRSM
(tp=10µs) Ratio
tp
IRP
0
VR
0.5IRP VRP
IR
PRRSM = IRP × VRP
