TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM5964-16SL-081 mg LOW INTERMODULATION DISTORTION @ HIGH GAIN IM3=-45dBe at Po=31.5dBm Single Carrier Level m= HIGH POWER G1dB=8.0dB at 5.9GHz to 6.4GHz m BROAD BAND INTERNALLY MATCHED m@ HERMETICALLY SEALED PACKAGE P1dB=42.5dBm at 5.9GHz to 6.4GHz RF PERFORMANCE SPECIFICATIONS (Ta=25 C) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. Output Power at 1dB Pyap dBm 42.5 Gain Compression Point Vps=10V Power Gain at 1dB Guap f= 5.9- 6.4GHz dB 7.0 8.0 Gain Compression Point Drain Current Ins A _ 4.4 5.0 Gain Flatness AG dB = ~ +0.8 Power Added Efficiency Nyadd % _ 34 - 3 Order Intermodulation IM, Note 1 dBc -42 -45 - Distortion Channel Temperature Rise ATch VpsxIpgxRth(c-c) C ~ = 80 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTICS SYMBOL | CONDITION | UNIT MIN. TYP. MAX. Transconductance gm Vps=3V ms _ 3600 Tpc=6.0A Pinch-off Voltage Vasotr Vps=3V Vv -1.0 -2.5 -4.0 Ipg=60mA Saturated Drain Current Tpss Vps=3V A 10.5 14.0 Vgg=0V Gate-Source Breakdown Vaso Tog= -200HA Vv 5 - - Voltage Thermal Resistance Rth (c-c) Channel to Case | C/W = 1.5 2.0 Note 1: 2 tone test Pout=31.5dBm Single Carrier Level Recommended Gate Resistance (Rg): Rg=Rg1(50Q) + Rg2(50Q)=100Q (MAX). 1 TIM5964-16SL-081 ABSOLUTE MAXIMUM RATINGS(Ta=25C) CHARACTERISTICS SYMBOL RATING UNIT Drain Source Voltage Vos 15 V Gate Source Voltage Vas -5 Vv Drain Current Ips 14 A Total Power Dissipation (Tc=25 C) Pt 75 W Channel Temperature Tch 175 C Storage Temperature Tstg -65 ~ +175 C PACKAGE OUTLINE (2-16G1B) 0.7 +0.15 : 7 Unit in mm t c E wn @ Gate @ Source @ Drain 17,.4+0.4 J | a THIrT 2 c wo x OL nN 20.4 + 0.3 24.5 max. 16.4 5.5 max. HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. @ = The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. @ = The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. ee SS CORP OR ATIC 5 2