© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 7
1Publication Order Number:
MDC3105/D
MDC3105
Integrated Relay,
Inductive Load Driver
This device is intended to replace an array of three to six discrete
components with an integrated SMT part. It is available in a SOT−23
package. It can be used to switch 3 to 6 Vdc inductive loads such as
relays, solenoids, incandescent lamps, and small DC motors without
the need of a free−wheeling diode.
Features
•Provides a Robust Driver Interface between DC Relay Coil and
Sensitive Logic Circuits
•Optimized to Switch Relays from a 3.0 V to 5.0 V Rail
•Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
•Features Low Input Drive Current and Good Back−to−Front Transient
Isolation
•Internal Zener Eliminates Need for Free−Wheeling Diode
•Internal Zener Clamp Routes Induced Current to Ground for Quieter
System Operation
•Guaranteed Off State with No Input Connection
•Supports Large Systems with Minimal Off−State Leakage
•ESD Resistant in Accordance with the Class 1C Human Body Model
•Low Sat Voltage Reduces System Current Drain by Allowing Use of
Higher Resistance Relay Coils
•Pb−Free Packages are Available
Applications
•Telecom: Line Cards, Modems, Answering Machines, FAX
Machines, Feature Phone Electronic Hook Switch
•Computer and Office: Photocopiers, Printers, Desktop Computers
•Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders, TV Set Top Boxes
•Industrial: Small Appliances, White Goods, Security Systems,
Automated Test Equipment, Garage Door Openers
•Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
MARKING
DIAGRAMS
Relay, Inductive Load Driver
1
SOT−23
CASE 318
STYLE 6
SC−74
CASE 318F
STYLE 8
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
JW M G
G
JW = Specific Device Code
M = Date Code*
G= Pb−Free Package
JW M G
G
(Note: Microdot may be in either location)
1
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SOT−563
CASE 463A
STYLE 4
1
JW M G
G
1
6
MDC3105
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2
INTERNAL CIRCUIT DIAGRAMS
CASE 318F
CASE 318
Vout (3)
Vin
(1)
1.0 k
33 k
6.6 V
GND (2)
Vout (6)
Vin
(5)
1.0 k
33 k
6.6 V
GND (1)
Vout (3)
Vin
(2)
1.0 k
33 k
6.6 V
GND (4)
CASE 463A
Vout (1, 2, 5, 6)
Vin
(3)
1.0 k
33 k
6.6 V
GND (4)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Power Supply Voltage VCC 6.0 Vdc
Input Voltage Vin(fwd) 6.0 Vdc
Reverse Input Voltage Vin(rev) −0.5 Vdc
Repetitive Pulse Zener Energy Limit (Duty Cycle ≤ 0.01%) SOT−23 Ezpk 50 mJ
Output Sink Current −Continuous IO500 mA
Junction Temperature TJ150 °C
Operating Ambient Temperature Range TA−40 to +85 °C
Storage Temperature Range Tstg −65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Power Dissipation (Note 1) SOT−23
Derate above 25°C
PD225
1.8
mW
mW/°C
Total Device Power Dissipation (Note 1) SC−74
Derate above 25°C
PD380
1.5
mW
mW/°C
Total Device Power Dissipation (Note 1) SOT−563
Derate above 25°C
PD357
2.9
mW
mW/°C
Thermal Resistance Junction−to−Ambient SOT−23
SC−74
SOT−563
RqJA 556
329
250
°C/W
1. FR−5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C
MDC3105
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
(@ IT = 10 mA Pulse)
V(BRout)
V(−BRout)
6.2
−
6.6
−0.7
7.0
−
V
V
Output Leakage Current @ 0 Input Voltage
(VO = 5.5 Vdc, Vin = O.C., TA = 25°C)
(VO = 5.5 Vdc, Vin = O.C., TA = 85°C)
IOO
−
−
−
−
0.1
30
mA
Guaranteed “OFF” State Input Voltage (IO ≤ 100 mA) Vin(off) − − 0.4 V
ON CHARACTERISTICS
Input Bias Current (HFE Limited)
(IO = 250 mA, VO = 0.25 Vdc)
Iin
−0.8 1.6
mAdc
Output Saturation Voltage
(IO = 250 mA, Iin = 1.5 mA)
VO(sat)
−0.12 0.16
Vdc
Output Sink Current −Continuous
(VCE = 0.25 Vdc, Iin = 1.5 mA)
IO(on) 250 400 −
mA
ORDERING INFORMATION
Device Package Shipping†
MDC3105LT1 SOT−23
3000 / Tape & Reel
MDC3105LT1G SOT−23
(Pb−Free)
MDC3105DMT1 SC−74
MDC3105DMT1G SC−74
(Pb−Free)
MDC3105XV6T1G SOT−563
(Pb−Free) 4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MDC3105
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4
TYPICAL APPLICATION−DEPENDENT SWITCHING PERFORMANCE
SWITCHING CHARACTERISTICS
Characteristic Symbol Min Typ Max Units
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V 74HC04)
Low to High Propagation Delay; Figure 1 (5.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 13 (3.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 13 (3.0 V 74HC04)
High to Low Propagation Delay; Figures 1, 14 (5.0 V 74LS04)
Low to High Propagation Delay; Figures 1, 14 (5.0 V 74LS04)
tPHL
tPLH
tPHL
tPLH
tPHL
tPLH
−
−
−
−
−
−
55
430
85
315
55
2.4
−
−
−
−
−
−
nS
mS
Transition Times:
Fall Time; Figure 1 (5.0 V 74HC04)
Rise Time; Figure 1 (5.0 V 74HC04)
Fall Time; Figures 1, 13 (3.0 V 74HC04)
Rise Time; Figures 1, 13 (3.0 V 74HC04)
Fall Time; Figures 1, 14 (5.0 V 74LS04)
Rise Time; Figures 1, 14 (5.0 V 74LS04)
tf
tr
tf
tr
tf
tr
−
−
−
−
−
−
45
160
70
195
45
2.4
−
−
−
−
−
−
nS
mS
Figure 1. Switching Waveforms
Vout
GND
Vin
GND
VZ
VCC
VCC
trtf
tPLH tPHL
50%
90%
50%
10%
MDC3105
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5
10 mA 50 mA 125 mA
TYPICAL PERFORMANCE CHARACTERISTICS
(ON CHARACTERISTICS)
Figure 2. Transistor DC Current Gain Figure 3. Input V−I Requirement Compared to
Possible Source Logic Outputs
Figure 4. Threshold Effects Figure 5. Transistor Output V−I Characteristic
Figure 6. Output Saturation Voltage versus
Iout/Iin
Figure 7. Zener Clamp Voltage versus Zener
Current
100 10001.0
IO, OUTPUT SINK CURRENT (mA)
350
300
200
250
150
INPUT CURRENT (mA)
2.5 4.00
2.0
1.0
0.5
0
0
INPUT CURRENT (mA)
50
10
5.0
0
VO, OUTPUT VOLTAGE (Vdc)
1.00
500
400
300
200
100
0
2.0
0.10.04
Iin, INPUT CURRENT (mA)
1.3
0.3
0.2
0.1
0
IZ, ZENER CURRENT (mA)
1.0 100
8.5
8.0
7.5
6.5
6.0
10
HFE, TRANSISTOR DC CURRENT GAIN
INPUT VOLTAGE (VOLTS)
OUTPUT CURRENT (mA)
Iout, OUTPUT CURRENT (mA)
100
50
0
10 3.0 3.50.5 1.0 1.5 2.0
1.5
2.5
3.0
0.01 0.02 0.03 0.04 0.05 0.5 3.01.5 4.0 4.5 5.0
, OUTPUT VOLTAGE (Vdc)Vout
1.0 10 1000
7.0
VZ, ZENER CLAMP VOLTAGE (VOLTS)
500
400
450
4.0
3.5
4.5
5.0
0.06 0.07 0.08 0.09 0.1
20
15
30
25
40
35
45
2.5 3.5
0.6
0.5
0.4
0.9
0.8
0.7
1.2
1.1
1.0
TJ = 85°C
25°C
-40°C
TJ = 85°C
25°C
-40°C
Iin = 1.5 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
0.1 mA
TJ = 85°C
25°C
-40°C
VO = 1.0 V
VO = 0.25 V MC54LS04
+BAL99LT1
MDC3105LT1
Vin vs. Iin
MC74HC04
@ 4.5 Vdc
MC68HC05C8
@ 5.0 Vdc
MC68HC05C8 @ 3.3 Vdc
MC14049B @ 4.5 Vdc
MC74HC04
@ 3.0 Vdc
TJ = 25°C
VO = 0.25 V
Iout =
500 mA
TJ = 25°C
TJ = -40°C
175 mA 350 mA
MDC3105
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6
-55 -35 25 85
TJ, JUNCTION TEMPERATURE (°C)
10,000 k
100 k
OUTPUT LEAKAGE CURRENT (nA)
1000 k
10 k
100
10
1.0 k
1.0
-15 5.0 6545
VCC = 5.5 Vdc
Vin = 0.5 Vdc
Vin = 0.35 Vdc
Vin = 0 Vdc
TYPICAL PERFORMANCE CHARACTERISTICS
(OFF CHARACTERISTICS)
Figure 8. Output Leakage Current versus
Temperature
Figure 9. Output Leakage Current versus
Supply Voltage
0 1.0 2.0 3.0
VCC, SUPPLY VOLTAGE (Vdc)
100
10
1.0
0
OUTPUT LEAKAGE CURRENT (nA)
Figure 10. Safe Operating Area for MDC3105LT1
0.1
Vout (VOLTS)
0.1
0.01
4.0 5.0 6.0 7.0
10 k
1.0 k
100 k
1.0 10
1.0
TJ = 25°CVin = 0.5 Vdc
Vin = 0.35 Vdc
Vin = 0 Vdc
RCE(sat)
VCC(max) = +6.0 Vdc TYPICAL
IZ vs VZ
Iout(max) = 500 mA *24 ms
*34 ms
*90 ms
*232 ms
*375 ms
°CONTINUOUS DUTY
°PW = 7.0 ms
DC = 5%
°PW = 10 ms
DC = 20%
°PW = 0.1 s
DC = 50%
TA = 25°C
° = TRANSISTOR PC THERMAL LIMIT
* = MAX L/R FROM ZENER PULSED ENERGY LIMIT
(REFER TO FIGURE 11)
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7
Figure 11. Zener Repetitive Pulse Energy Limit
on L/R Time Constant for MDC3105LT1
0.001
Izpk (AMPS)
100
10
MAX L/R TIME CONSTANT (ms)
0.01 1.0
1.0 k
10 k
100 k
0.1
TA = 25°C
Emax = 50 mJ
L/R = 2 * Emax ÷ (Vzpk * Izpk)
t1, PULSE WIDTH (ms)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.1
0.01
0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000
0.001
Figure 12. Transient Thermal Response for MDC3105LT1
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
Pd(pk)
t1
t2
DUTY CYCLE = t1/t2
PERIOD
PW
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8
Using TTR Designing for Pulsed Operation
For a repetitive pulse operating condition, time averaging
allows one to increase a device’s peak power dissipation
rating above the average rating by dividing by the duty cycle
of the repetitive pulse train. Thus, a continuous rating of 200
mW of dissipation is increased to 1.0 W peak for a 20% duty
cycle pulse train. However, this only holds true for pulse
widths which are short compared to the thermal time
constant of the semiconductor device to which they are
applied.
For pulse widths which are significant compared to the
thermal time constant of the device, the peak operating
condition begins to look more like a continuous duty
operating condition over the time duration of the pulse. In
these cases, the peak power dissipation rating cannot be
merely time averaged by dividing the continuous power
rating by the duty cycle of the pulse train. Instead, the
average power rating can only be scaled up a reduced
amount in accordance with the device’s transient thermal
response, so that the device’s max junction temperature is
not exceeded.
Figure 12 of the MDC3105 data sheet plots its transient
thermal resistance, r(t) as a function of pulse width in ms for
various pulse train duty cycles as well as for a single pulse
and illustrates this effect. For short pulse widths near the left
side of the chart, r(t), the factor, by which the continuous
duty thermal resistance is multiplied to determine how much
the peak power rating can be increased above the average
power rating, approaches the duty cycle of the pulse train,
which is the expected value. However, as the pulse width is
increased, that factor eventually approaches 1.0 for all duty
cycles indicating that the pulse width is sufficiently long to
appear as a continuous duty condition to this device. For the
MDC3105LT1, this pulse width is about 100 seconds. At
this and larger pulse widths, the peak power dissipation
capability is the same as the continuous duty power
capability.
To use Figure 12 to determine the peak power rating for
a specific application, enter the chart with the worst case
pulse condition, that is the max pulse width and max duty
cycle and determine the worst case r(t) for your application.
Then calculate the peak power dissipation allowed by using
the equation,
Pd(pk) = (TJmax − TAmax) ÷ (RqJA * r(t))
Pd(pk) = (150°C − TAmax) ÷ (556°C/W * r(t))
Thus for a 20% duty cycle and a PW = 40 ms, Figure 12
yields r(t) = 0.3 and when entered in the above equation, the
max allowable Pd(pk) = 390 mW for a max TA = 85°C.
Also note that these calculations assume a rectangular
pulse shape for which the rise and fall times are insignificant
compared to the pulse width. If this is not the case in a
specific application, then the VO and IO waveforms should
be multiplied together and the resulting power waveform
integrated to find the total dissipation across the device. This
then would be the number that has to be less than or equal
to the Pd(pk) calculated above. A circuit simulator having a
waveform calculator may prove very useful for this purpose.
Notes on SOA and Time Constant Limitations
Figure 10 is the Safe Operating Area (SOA) for the
MDC3105. Device instantaneous operation should never be
pushed beyond these limits. It shows the SOA for the
Transistor “ON” condition as well as the SOA for the Zener
during the turn−off transient. The max current is limited by
the Izpk capability of the Zener as well as the transistor in
addition to the max input current through the resistor. It
should not be exceeded at any temperature. The BJT power
dissipation limits are shown for various pulse widths and
duty cycles at an ambient temperature of 25°C. The voltage
limit is the max VCC that can be applied to the device. When
the input to the device is switched off, the BJT “ON” current
is instantaneously dumped into the Zener diode where it
begins its exponential decay. The Zener clamp voltage is a
function of that BJT current level as can be seen by the
bowing of the VZ versus IZ curve at the higher currents. In
addition to the Zener’s current limit impacting this device’s
500 mA max rating, the clamping diode also has a peak
energy limit as well. This energy limit was measured using
a rectangular pulse and then translated to an exponential
equivalent using the 2:1 relationship between the L/R time
constant of an exponential pulse and the pulse width of a
rectangular pulse having equal energy content. These L/R
time constant limits in ms appear along the VZ versus IZ
curve for the various values of IZ at which the Pd lines
intersect the VCC limit. The L/R time constant for a given
load should not exceed these limits at their respective
currents. Precise L/R limits on Zener energy at intermediate
current levels can be obtained from Figure 11.
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9
Designing with this Data Sheet
1. Determine the maximum inductive load current (at
max VCC, min coil resistance and usually minimum
temperature) that the MDC3105 will have to drive
and make sure it is less than the max rated current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 12 and the instructions with it
to determine the maximum limit on transistor power
dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes above to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
4. While keeping any VO(sat) requirements in mind,
determine the max input current needed to achieve
that output current from Figures 2 and 6.
5. For levels of input current below 100 mA, use the
input threshold curves of Figure 4 to verify that
there will be adequate input current available to
turn on the MDC3105 at all temperatures.
6. For levels of input current above 100 mA, enter
Figure 3 using that max input current and determine
the input voltage required to drive the MDC3105
from the solid Vin versus Iin line. Select a suitable
drive source family from those whose dotted lines
cross the solid input characteristic line to the right
of the Iin, Vin point.
7. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system and EMI requirements.
8. Using Figures 8 and 9, insure that “OFF” state
leakage over temperature and voltage extremes does
not violate any system requirements.
9. Review circuit operation and insure none of the
device max ratings are being exceeded.
Figure 13. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V−HCMOS Level Translating Interface
+4.5 ≤ VCC ≤ +5.5 Vdc
+
Vout (6)
74HC04 OR
EQUIVALENT
+
AROMAT
TX2-L2-5 V
Vin (5)
GND (1)
Vout (3)
Vin (2)
GND (4)
74HC04 OR
EQUIVALENT
MDC3105DMT1
+3.0 ≤ VDD ≤ +3.75 Vdc
APPLICATIONS DIAGRAMS
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10
Figure 14. A 140 mW, 5.0 V Relay with TTL Interface
+4.5 TO +5.5 Vdc
+
Vout
74LS04
-
AROMAT
TX2-5V
Vin
GND
Max Continuous Current Calculation
for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C
Assuming ±10% Make Tolerance,
R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C
TC for Annealed Copper Wire is 0.4%/°C
R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C
IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA
BAL99LT1
MDC3105
+
Vout
74HC04 OR
EQUIVALENT
-
AROMAT
JS1E-5V
MDC3105
Figure 15. A Quad 5.0 V, 360 mW Coil Relay Bank
-
+
AROMAT
JS1E-5V
+
-
AROMAT
JS1E-5V
-
+
AROMAT
JS1E-5V
+4.5 TO +5.5 Vdc
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11
TYPICAL OPERATING WAVEFORMS
Figure 16. 20 Hz Square Wave Input
10 30 50 70 90
TIME (ms)
4.5
3.5
2.5
1.5
500
M
Vin (VOLTS)
Figure 17. 20 Hz Square Wave Response
10 30 50 70 90
TIME (ms)
225
175
125
75
25
IC (mA)
Figure 18. 20 Hz Square Wave Response
10 30 50 70 90
TIME (ms)
9
7
5
3
1
Figure 19. 20 Hz Square Wave Response
10 30 50 70 90
TIME (ms)
172
132
92
52
12
IZ (mA)
Vout (VOLTS)
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12
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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13
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE M
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW
STANDARD 318F−05.
C
L
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.25 0.37 0.50 0.010
c0.10 0.18 0.26 0.004
D2.90 3.00 3.10 0.114
E1.30 1.50 1.70 0.051
e0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
HE
− −
L
0°10°0°10°
q
q
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
6. COLLECTOR 1
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14
PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
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