PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000A Back Side Metalization Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,170 PRINCIPAL DEVICE TYPES 1N5807 thru 1N5811 UES1301 thru UES1306 UES1401 thru UES1403 CUDD8-02 Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) Central Semiconductor Corp. CPD18 PROCESS TM Typical Electrical Characteristics 0.001 0 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com 200 400 600 800 R2 (19-September 2003)