MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD30HVF1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W
RD30HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
14.0+/-0.4
3.0+/-0.4
5.1+/-0.5
R1.6
2.3+/-0.3
4-C1
2
6.6+/-0.3
0.10
2.8+/-0.3
3
18.0+/-0.3
22.0+/-0.3
7.6+/-0.3
1
7.2+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:m
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
APPLICATION
For output stage of high power amplifiers in VHF band
Mobile radio sets.
RoHS COMPLIANT
RD30HVF1-101is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 75 W
Pin Input power Zg=Zl=50Ω 2.5
W
ID Drain current - 7 A
Tch Channel temperature - 175 °C
Tstg Storage temperature - -40 to +175 °C
Rth j-c Thermal resistance junction to case 2.0 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 130 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold voltage VDS=12V, IDS=1mA 1.3 1.8 2.3 V
Pout Output power f=175MHz ,VDD=12.5V 30 35 - W
ηD Drain efficiency Pin=1.0W, Idq=0.5A 55 60 - %
Load VSWR tolerance VDD=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
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