BT169D,116 - NXP SEMICONDUCTORS - Datasheet.Directory

1. Product profile

1.1 General description

Passivated, sensitive gate thyristors in a SOT54 plastic package.

1.2 Features and benefits

Designed to be interfaced directly to microcontrollers, logic integrated circuits and

other low power gate trigger circuits.

1.3 Applications

General purpose switching and phase control applications.

1.4 Quick reference data

2. Pinning information

BT169 series

Thyristors logic level

Rev. 5 — 30 September 2011 Product data sheet

TO-92

VDRM, VRRM  200 V (BT169B) IT(RMS)  0.8 A

VDRM, VRRM  400 V (BT169D) IT(AV)  0.5 A

VDRM, VRRM  600 V (BT169G) ITSM  8 A

Table 1. Discrete pinning

Pin Description Simplified outline Symbol

1 anode (a)

SOT54 (T O-92)

2 gate (g)

3 cathode (k)

123

sym037

Product data sheet Rev. 5 — 30 September 2011 2 of 13

NXP Semiconductors BT169 series

Thyristor logic level

3. Ordering information

4. Limiting values

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/s.

Table 2. Ordering informatio n

Type number Package

Name Description Version

BT169B - plastic single-ended leaded (through hole) package; 3 leads SOT54

BT169D

BT169G

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM, VRRM repetitive peak off-state voltages

BT169B [1] -200V

BT169D [1] -400V

BT169G [1] -600V

IT(AV) average on-state current half sine wave;

Tlead 83 C;

see Figure 1

-0.5A

IT(RMS) RMS on-state current all conduction angles;

see Figure 4 and 5-0.8A

ITSM non-repetitive peak on-state current half sine wave;

Tj=25C prior to

surge;

see Figure 2 and 3

t = 10 ms - 8 A

t = 8.3 ms - 9 A

I2tI

2t for fusing t = 10 ms - 0.32 A2s

dIT/dt repetitive rate of rise of on-state

current after triggering ITM = 2 A; IG = 10 mA;

dIG/dt = 100 mA/s-50A/s

IGM peak gate current - 1 A

VGM peak gate voltage - 5 V

VRGM peak reverse gate voltage - 5 V

PGM peak gate pow e r - 2 W

PG(AV) averag e gate power over any 20 ms period - 0.1 W

Tstg storage temperature 40 +150 C

Tjjunction temperature - 125 C

Product data sheet Rev. 5 — 30 September 2011 3 of 13

NXP Semiconductors BT169 series

Thyristor logic level

a = form factor = IT(RMS)/IT(AV).

Fig 1. Total power dissipation as a function of average on-st ate current; maximum values.

f = 50 Hz.

Fig 2. No n-re pe titive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values.

001aab446

0.4

0.2

0.6

0.8

Ptot

(W)

101

113

125

IT(AV) (A)

0 0.60.40.20.1 0.50.3

a =

1.57

2.2

1.9

2.8

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Tlead(max)

(°C)

001aab499

ITSM

(A)

number of cycles

1 103

102

Tj(init) = 25 °C max

ITITSM

Product data sheet Rev. 5 — 30 September 2011 4 of 13

NXP Semiconductors BT169 series

Thyristor logic level

tp  10 ms.

Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal current s; maximum

values.

f = 50 Hz; Tlead  83 C. (1) Tlead = 83 C.

Fig 4. RMS on-state current as a function of surge

duration for sinusoidal currents. Fig 5. RMS on-state current as a function of lead

temperature; maximum values.

001aab497

tp (s)

10−510−2

10−3

10−4

102

103

ITSM

(A)

Tj(init) = 25 °C max

ITITSM

001aab449

0.5

1.5

IT(RMS)

(A)

surge duration (s)

10−210−1101

Tlead (°C)

−50 150100050

001aab450

0.4

0.6

0.2

0.8

IT(RMS)

(A)

(1)

Product data sheet Rev. 5 — 30 September 2011 5 of 13

NXP Semiconductors BT169 series

Thyristor logic level

5. Thermal characteristics

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-lead) thermal resist an ce from juncti on to

lead --60K/W

Rth(j-a) thermal resista nce from junc tion to

ambient printed-circuit board mounted;

lead length = 4 mm -150-K/W

Fig 6. Transient thermal impedance as a func tio n of pu ls e width .

001aab451

102

10−1

Zth(j-lead)

(K/W)

10−2

tp (s)

10−511010−1

10−2

10−410−3

δ =

Product data sheet Rev. 5 — 30 September 2011 6 of 13

NXP Semiconductors BT169 series

Thyristor logic level

6. Characteristics

Table 5. Characteristics

Tj = 25



C unless otherwise stated.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD = 12 V; IT = 10 mA;

gate open circuit; see Figure 8 -50200A

ILlatching current VD = 12 V; IGT = 0.5 mA;

RGK =1k; see Figure 10 - 26mA

IHholding current VD = 12 V; IGT = 0.5 mA;

RGK =1k; see Figure 11 - 25mA

VTon-state voltage IT = 1.2 A - 1.25 1.7 V

VGT gate trigger voltage IT = 10 mA; gate open circuit;

see Figure 7

VD = 12 V - 0.5 0.8 V

VD = VDRM(max); Tj = 125 C0.20.3-V

ID, IRoff-state leakage

current VD = VDRM(max); VR = VRRM(max);

Tj= 125 C; RGK = 1 k

- 0.05 0.1 mA

Dynamic characteristics

dVD/dt critical rate of rise of

off-state voltage VDM = 67 % VDRM(max); Tj = 125 C;

exponential waveform;

see Figure 12

RGK = 1 k500 800 - V/s

gate open circuit - 25 - V/s

tgt gate controll ed

turn-on time ITM = 2 A; VD = VDRM(max);

IG=10mA; dI

G/dt = 0.1 A/s-2-s

tqcircuit commuted

turn-off time VD = 67 % VDRM(max); Tj = 125 C;

ITM = 1.6 A; VR = 35 V;

dITM/dt = 30 A/s; dVD/dt = 2 V/s;

RGK = 1 k

-100-s

Product data sheet Rev. 5 — 30 September 2011 7 of 13

NXP Semiconductors BT169 series

Thyristor logic level

Fig 7. Normalized gate trigger voltage as a function of

junction temperature. Fig 8. Normalized gate trigger current as a function

junction temperature.

VO = 1.067 V.

RS = 0.187 .

(1) Tj = 125 C; typical values.

(2) Tj = 125 C; maximum values.

(3) Tj = 25 C; maximum values.

RGK = 1 k.

Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of

junction temperature.

Tj (°C)

−50 150100050

001aab501

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Tj (°C)

−50 150100050

001aab502

IGT

IGT(25°C)

001aab454

VT (V)

0.4 2.821.2

(A)

(1) (2) (3)

Tj (°C)

−50 150100050

001aab503

IL(25°C)

Product data sheet Rev. 5 — 30 September 2011 8 of 13

NXP Semiconductors BT169 series

Thyristor logic level

7. Package information

Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.

RGK = 1 k.(1)R

GK = 1 k.

(2) Gate open circuit.

Fig 11. Normalized holding current as a function of

junction temperature. Fig 12. Critical rate of rise of off-state voltage as a

function of junction temperature; typical

values.

Tj (°C)

−50 150100050

001aab504

IH(25°C)

001aab507

Tj (°C)

0 15010050

103

102

104

dVD/dt

(V/μs)

(1)

(2)

Product data sheet Rev. 5 — 30 September 2011 9 of 13

NXP Semiconductors BT169 series

Thyristor logic level

8. Package outline

Fig 13. Package outline SOT54 (TO-92).

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

Product data sheet Rev. 5 — 30 September 2011 10 of 13

NXP Semiconductors BT169 series

Thyristor logic level

9. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Or de r nu mber Supersedes

BT169_SERIES v.5 20110930 Product data sheet - 9397 750 13512 BT169_SERIES v.4

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BT169_SERIES v.4 20040823 Product data sheet - 9397 750 13512 BT169_SERIES v.3

Modifications: •The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

•Section 1.4 “Quick reference data”: BT169E obsolete, removed from list.

•Table 2 “Ordering information”: BT169E obsolete, removed from table.

•Table 3 “Limiting values”: BT169E obsolete, removed from table.

BT169_SERIES v.3 20010902 Product specification - not applicable BT169_SERIES v.2

BT169_SERIES v.2 20010901 Product specification - not applicable BT169_SERIES v.1

BT169_SERIES v.1 19970901 Product specification - not applicable -

Product data sheet Rev. 5 — 30 September 2011 11 of 13

NXP Semiconductors BT169 series

Thyristor logic level

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

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full information. For detailed and full information see the relevant full data

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customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.

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Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 30 September 2011 12 of 13

NXP Semiconductors BT169 series

Thyristor logic level

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10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BT169 series

Thyristor logic level

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 September 2011

Document identifier: BT169_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

7 Package information . . . . . . . . . . . . . . . . . . . . . 8

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Contact information. . . . . . . . . . . . . . . . . . . . . 12

12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13