1 - 2© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
308
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 18 A
IC80 TC = 80°C 14 A
ICM VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 90 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C 2.3 2.7 V
TVJ = 125°C 2.7 V
VGE(th) IC = 0.4 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 0.5 mA
TVJ = 125°C 0.8 mA
IGES VCE = 0 V; VGE = ± 20 V 200 nA
td(on) 50 ns
tr40 ns
td(off) 290 ns
tf60 ns
Eon 1.2 mJ
Eoff 1.1 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
QGon VCE = 600 V; VGE = 15 V; IC = 10 A 45 nC
RthJC (per IGBT) 1.4 K /W
RthJH (per IGBT) with heatsink compound 2.7 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
IC25 = 18 A
VCES = 1200 V
VCE(sat) typ. = 2.3 V
IGBT Module
Sixpack in ECO-PAC 2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
VWI 15-12P1
www.ixys.net
S 9
G 1
L 9
N 5
A 1
F 3 C 1
X 18
W 14
K 10
N 9
R 5
D 5
A 5
H 5
K 12
K 13
NTC
Pin arangement see outlines
Preliminary data
2 - 2© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
308
VWI 15-12P1
Dimensions in mm (1 mm = 0.0394")
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 15 A
IF80 TC = 80°C 10 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 10 A; TVJ = 25°C 2.6 3.0 V
TVJ = 125°C 1.9 V
IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A
trr VR = 600 V; VGE = 0 V 110 ns
RthJC (per diode) 3.5 K/W
RthJH (per diode) with heatsink compound 5.0 K/W
Component
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~
Mdmounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K
