TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40-60-80-100 VOLTS, 40 WATTS Features * Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage - * * * VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package Pb-Free Packages are Available* MARKING DIAGRAM 4 TO-220AB CASE 221A STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCEO 40 60 80 100 Vdc TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCB 40 60 80 100 Vdc VEB 5.0 Vdc IC 3.0 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 0.32 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C E 32 mJ TJ, Tstg - 65 to + 150 C Collector - Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Unclamped Inductive Load Energy (Note 1) Operating and Storage Junction Temperature Range 1 2 PIN 1. 2. 3. 4. 3 TIP3xx xx A Y WW G TIP3xxG AYWW BASE COLLECTOR EMITTER COLLECTOR = Device Code = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C, = Assembly Location = Year = Work Week Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 September, 2011 - Rev. 13 1 Publication Order Number: TIP31A/D TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W Thermal Resistance, Junction-to-Case RqJC 3.125 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 40 60 80 100 - - - - Vdc ICEO - 0.3 mAdc - 0.3 - - - - 200 200 200 200 IEBO - 1.0 mAdc hFE 25 10 - 50 - Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) - 1.2 Vdc Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.8 Vdc Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICES mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) COLLECTOR COLLECTOR BASE BASE 8.0 k 120 8.0 k 120 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ORDERING INFORMATION Device TIP31 Package Shipping TO-220 50 Units / Rail TIP31G TO-220 (Pb-Free) 50 Units / Rail TIP31A TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TIP32G TO-220 (Pb-Free) 50 Units / Rail TIP32A TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TIP31AG TIP31B TIP31BG TIP31C TIP31CG TIP32 TIP32AG TIP32B TIP32BG TIP32C TIP32CG http://onsemi.com 3 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) PD, POWER DISSIPATION (WATTS) TC TA 40 4.0 TC 30 3.0 20 2.0 TA 10 1.0 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 2. Power Derating TURN-ON PULSE APPROX +11 V 2.0 RC IC/IB = 10 TJ = 25C 1.0 Vin Vin 0 VEB(off) VCC SCOPE RB t3 APPROX +11 V Cjd << Ceb t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns Vin t2 TURN-OFF PULSE t, TIME (ms) t1 -4.0 V 0.7 0.5 tr @ VCC = 30 V 0.3 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 DUTY CYCLE 2.0% APPROX - 9.0 V td @ VEB(off) = 2.0 V 0.05 0.1 0.3 0.5 1.0 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Time Equivalent Circuit Figure 4. Turn-On Time http://onsemi.com 4 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 ZqJC(t) = r(t) RqJC RqJC(t) = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 1.0 0.5 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 5. Thermal Response There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 10 5.0 100ms 5.0ms 2.0 1.0 0.5 0.2 0.1 5.0 SECONDARY BREAKDOWN LIMITED @ TJ 150C THERMAL LIMIT @ TC = 25C (SINGLE PULSE) BONDING WIRE LIMIT TIP31A, TIP32A CURVES APPLY TIP31B, TIP32B BELOW RATED VCEO TIP31C, TIP32C 1.0ms 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Active Region Safe Operating Area 300 ts t, TIME (s) 1.0 tf @ VCC = 30 V 0.7 0.5 0.3 0.2 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C TJ = +25C 200 CAPACITANCE (pF) 3.0 2.0 tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.03 100 Ceb 70 50 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 30 0.1 3.0 Figure 7. Turn-Off Time Ccb 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance http://onsemi.com 5 20 30 40 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) hFE, DC CURRENT GAIN 300 100 70 50 TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 VCE = 2.0 V 25C -55C 30 10 7.0 5.0 0.5 0.7 1.0 0.03 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25C 1.6 IC = 0.3 A 1.2 0.4 0 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (A) 100 10-1 10-2 500 1000 *APPLIES FOR IC/IB hFE/2 TJ = -65C TO +150C +2.0 +1.5 +1.0 +0.5 *qVC FOR VCE(sat) 0 -0.5 -1.0 qVB FOR VBE -1.5 -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) Figure 11. "On" Voltages Figure 12. Temperature Coefficients 103 101 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 102 5.0 +2.5 TJ = 25C 1.0 0.2 2.0 Figure 10. Collector Saturation Region 1.4 0.8 3.0 A 0.8 Figure 9. DC Current Gain 1.2 1.0 A VCE = 30 V TJ = 150C 100C REVERSE FORWARD 25C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 2.0 3.0 107 VCE = 30 V IC = 10 x ICES 106 IC ICES 105 104 IC = 2 x ICES 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 13. Collector Cut-Off Region Figure 14. Effects of Base-Emitter Resistance http://onsemi.com 6 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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