© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 13
1Publication Order Number:
TIP31A/D
TIP31, TIP31A, TIP31B,
TIP31C, (NPN), TIP32,
TIP32A, TIP32B, TIP32C,
(PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
•Collector−Emitter Saturation Voltage −
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
•Collector−Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc (Min) − TIP31, TIP32
= 60 Vdc (Min) − TIP31A, TIP32A
= 80 Vdc (Min) − TIP31B, TIP32B
= 100 Vdc (Min) − TIP31C, TIP32C
•High Current Gain − Bandwidth Product
fT= 3.0 MHz (Min) @ IC = 500 mAdc
•Compact TO−220 AB Package
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO 40
60
80
100
Vdc
Collector−Base Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCB 40
60
80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current Continuous
Peak
IC3.0
5.0
Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy (Note 1) E 32 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to
+ 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
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TIP3xx = Device Code
xx = 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
A = Assembly Location
Y = Year
WW = Work Week
GPb−Free Package
TIP3xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) TIP31, TIP32
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO(sus) 40
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO −0.3 mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C −0.3
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0) TIP31, TIP32
(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B
(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C
ICES
−
−
−
−
200
200
200
200
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE 25
10
−
50
−
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) −1.2 Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) −1.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT3.0 −MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − −
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈8.0 k ≈120
BASE
EMITTER
COLLECTOR
≈8.0 k ≈120
ORDERING INFORMATION
Device Package Shipping
TIP31 TO−220 50 Units / Rail
TIP31G TO−220
(Pb−Free)
50 Units / Rail
TIP31A TO−220 50 Units / Rail
TIP31AG TO−220
(Pb−Free)
50 Units / Rail
TIP31B TO−220 50 Units / Rail
TIP31BG TO−220
(Pb−Free)
50 Units / Rail
TIP31C TO−220 50 Units / Rail
TIP31CG TO−220
(Pb−Free)
50 Units / Rail
TIP32 TO−220 50 Units / Rail
TIP32G TO−220
(Pb−Free)
50 Units / Rail
TIP32A TO−220 50 Units / Rail
TIP32AG TO−220
(Pb−Free)
50 Units / Rail
TIP32B TO−220 50 Units / Rail
TIP32BG TO−220
(Pb−Free)
50 Units / Rail
TIP32C TO−220 50 Units / Rail
TIP32CG TO−220
(Pb−Free)
50 Units / Rail
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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Figure 2. Power Derating
T, TEMPERATURE (°C)
0 100
0
1.0
160
2.0
3.0
60 80
40 140
4.0
TURN−ON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURN−OFF PULSE
t3
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
APPROX −9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
−4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1 3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
0.5
0.3
0.1
0.05
0.05 0.3 0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
tr @ VCC = 30 V
20 120
TC
TA
0
10
20
30
40
TC
TA
PD, POWER DISSIPATION (WATTS)
t, TIME (ms)
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t1/t2
Figure 5. Thermal Response
0.1
0.05
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
0.2
0.02
0.01
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10 205.0 50 100
Figure 6. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ ≤150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
5.0ms
CURVES APPLY
BELOW RATED VCEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05 0.1 0.2 0.70.03 0.3 0.50.07
IC, COLLECTOR CURRENT (AMP)
Figure 7. Turn−Off Time
3.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
300
CAPACITANCE (pF)
200
100
70
50
30
10 20 4030
tf @ VCC = 30 V
tf @ VCC = 10 V
ts′
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
TJ = +25°C
Ceb
Ccb
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.4
101
100
10-2
102
10-1
10-3
107
105
104
102
106
103
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 9. DC Current Gain Figure 10. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.05 0.07 0.3 3.00.03
100
70
50
30
10
7.0
0.1
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 11. “On” Voltages
VCE = 2.0 V
5.0 0.7 1.00.5
1.6
2.0
2.0 5.0 20 10001.0
0.8
0.4
10
0100 200 50050
25°C
TJ = 150°C
-55°C1.2
1.4
0.003
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
00.005 0.01 0.02 0.03 0.05 0.1
+2.5
IC = 0.3 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0 A 3.0 A
0.2 0.3 0.5 1.0 2.0 3.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
*APPLIES FOR IC/IB ≤ hFE/2
TJ = -65°C TO +150°C
*qVC FOR VCE(sat)
qVB FOR VBE
Figure 12. Temperature Coefficients
, COLLECTOR CURRENT (A)μIC
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 13. Collector Cut−Off Region Figure 14. Effects of Base−Emitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ≈ ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
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PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
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D
SEATING
PLANE
−T−
C
S
T
U
R
J
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TIP31A/D
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