© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 13
1Publication Order Number:
TIP31A/D
TIP31, TIP31A, TIP31B,
TIP31C, (NPN), TIP32,
TIP32A, TIP32B, TIP32C,
(PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
CollectorEmitter Saturation Voltage
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
CollectorEmitter Sustaining Voltage
VCEO(sus) = 40 Vdc (Min) TIP31, TIP32
= 60 Vdc (Min) TIP31A, TIP32A
= 80 Vdc (Min) TIP31B, TIP32B
= 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product
fT= 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
PbFree Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO 40
60
80
100
Vdc
CollectorBase Voltage TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCB 40
60
80
100
Vdc
EmitterBase Voltage VEB 5.0 Vdc
Collector Current Continuous
Peak
IC3.0
5.0
Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
0.32
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy (Note 1) E 32 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to
+ 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
406080100 VOLTS,
40 WATTS
http://onsemi.com
123
4
TIP3xx = Device Code
xx = 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
A = Assembly Location
Y = Year
WW = Work Week
GPbFree Package
TIP3xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient RqJA 62.5 °C/W
Thermal Resistance, JunctiontoCase RqJC 3.125 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2) TIP31, TIP32
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO(sus) 40
60
80
100
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO 0.3 mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C 0.3
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0) TIP31, TIP32
(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B
(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C
ICES
200
200
200
200
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE 25
10
50
CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) 1.2 Vdc
BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT3.0 MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
3
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
8.0 k 120
BASE
EMITTER
COLLECTOR
8.0 k 120
ORDERING INFORMATION
Device Package Shipping
TIP31 TO220 50 Units / Rail
TIP31G TO220
(PbFree)
50 Units / Rail
TIP31A TO220 50 Units / Rail
TIP31AG TO220
(PbFree)
50 Units / Rail
TIP31B TO220 50 Units / Rail
TIP31BG TO220
(PbFree)
50 Units / Rail
TIP31C TO220 50 Units / Rail
TIP31CG TO220
(PbFree)
50 Units / Rail
TIP32 TO220 50 Units / Rail
TIP32G TO220
(PbFree)
50 Units / Rail
TIP32A TO220 50 Units / Rail
TIP32AG TO220
(PbFree)
50 Units / Rail
TIP32B TO220 50 Units / Rail
TIP32BG TO220
(PbFree)
50 Units / Rail
TIP32C TO220 50 Units / Rail
TIP32CG TO220
(PbFree)
50 Units / Rail
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
4
Figure 2. Power Derating
T, TEMPERATURE (°C)
0 100
0
1.0
160
2.0
3.0
60 80
40 140
4.0
TURNON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURNOFF PULSE
t3
t1 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE 2.0%
APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1 3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
0.5
0.3
0.1
0.05
0.05 0.3 0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
tr @ VCC = 30 V
20 120
TC
TA
0
10
20
30
40
TC
TA
PD, POWER DISSIPATION (WATTS)
t, TIME (ms)
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
5
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t1/t2
Figure 5. Thermal Response
0.1
0.05
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
0.2
0.02
0.01
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10 205.0 50 100
Figure 6. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
5.0ms
CURVES APPLY
BELOW RATED VCEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05 0.1 0.2 0.70.03 0.3 0.50.07
IC, COLLECTOR CURRENT (AMP)
Figure 7. TurnOff Time
3.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
300
CAPACITANCE (pF)
200
100
70
50
30
10 20 4030
tf @ VCC = 30 V
tf @ VCC = 10 V
ts
IB1 = IB2
IC/IB = 10
ts = ts - 1/8 tf
TJ = 25°C
TJ = +25°C
Ceb
Ccb
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
6
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.4
101
100
10-2
102
10-1
10-3
107
105
104
102
106
103
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 9. DC Current Gain Figure 10. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.05 0.07 0.3 3.00.03
100
70
50
30
10
7.0
0.1
VBE, BASEEMITTER VOLTAGE (VOLTS)
Figure 11. “On” Voltages
VCE = 2.0 V
5.0 0.7 1.00.5
1.6
2.0
2.0 5.0 20 10001.0
0.8
0.4
10
0100 200 50050
25°C
TJ = 150°C
-55°C1.2
1.4
0.003
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
00.005 0.01 0.02 0.03 0.05 0.1
+2.5
IC = 0.3 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0 A 3.0 A
0.2 0.3 0.5 1.0 2.0 3.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
*APPLIES FOR IC/IB hFE/2
TJ = -65°C TO +150°C
*qVC FOR VCE(sat)
qVB FOR VBE
Figure 12. Temperature Coefficients
, COLLECTOR CURRENT (A)μIC
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 13. Collector CutOff Region Figure 14. Effects of BaseEmitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
TIP31A/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative