IRGP4078DPbF
IRGP4078D-EP
1 www.irf.com © 2012 International Rectifier January 8, 2013
IRGP4078DPbF
TO-247AC
G
C
E
G
G
C E
G
IRGP4078D-EP
TO-247AD
G C E
Gate Collector Emitter
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGP4078DPbF TO-247AC Tube 25 IRGP4078DPbF
IRGP4078D-EPbF TO-247AD Tube 25 IRGP4078D-EPbF
VCES = 600V
INOMINAL = 50A
TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V
E
G
n-channel
C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(ON), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 74
IC @ TC = 100°C Continuous Collector Current 50
ICM Pulse Collector Current, VGE = 15V 150
ILM Clamped Inductive Load Current, VGE = 20V 200
A
IF @ TC = 25°C Diode Continuous Forward Current 44
IFSM @ TC = 25°C Diode Non Repetitive Peak Surge Current @ TJ = 25°C 120
IFRM @Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs 79
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 278 W
PD @ TC = 100°C Maximum Power Dissipation 139
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300
(0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
IF @ TC = 100°C Diode Continuous Forward Current 25
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Electrical Characteristics @ TJ = 25°C (unless other wise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.45 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.2 V IC = 50A, VGE = 15V, TJ = 25°C
— 2.5 — IC = 50A, VGE = 15V, TJ = 150°C
— 2.6 — IC = 50A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 26 — S VCE = 50V, IC = 50A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 80 µA VGE = 0V, VCE = 600V
— 600 — VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.17 1.30 V IF = 25A
— 1.06 — IF = 25A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 61 92 IC = 50A
Qge Gate-to-Emitter Charge (turn-on) — 20 30 nCVGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 22 33 VCC = 300V
Eoff Turn-Off Switching Loss — 1.1 1.4 mJ IC = 50A, VCC = 400V, VGE = 15V
RG = 10, L = 210µH, TJ = 25°C
td(off) Turn-Off delay time — 116 — nsEnergy losses include tail & diode
tf Fall time — 33 — reverse recovery
Eoff Turn-Off Switching Loss — 1.5 — mJ IC = 50A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 175°C
td(off) Turn-Off delay time — 113 — ns Energy losses include tail & diode
tf Fall time — 54 — reverse recovery
Cies Input Capacitance — 2105 — VGE = 0V
Coes Output Capacitance — 131 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 59 — f = 1.0Mhz
TJ = 175°C, IC = 200A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V
Rg = 10, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp ≤ 600V
Rg = 10, VGE = +15V to 0V
Notes:
V
CC = 80% (VCES), VGE = 20V, L = 23µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
fsw = 20KHz, refer to figure 19.
R
is measured at TJ of approximately 90°C.
Sinusoidal half wave, t = 10ms.
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.54
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.55 °C/W
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
IRGP4078DPbF/EP
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0246810
VCE
(V)
0
50
100
150
200
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE
= 12V
VGE
= 10V
VGE
= 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
0 2 4 6 8 10
VCE
(V)
0
50
100
150
200
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE
= 12V
VGE
= 10V
VGE
= 8.0V
0 2 4 6 8 10
VCE
(V)
0
50
100
150
200
ICE (A)
VGE
= 18V
VGE
= 15V
VGE
= 12V
VGE
= 10V
VGE
= 8.0V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
IC (A)
10 100 1000
VCE
(V)
1
10
100
1000
IC (A)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
Fig. 2 - Power Dissipation vs.
Case Temperature
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
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4 6 8 10 12 14 16 18 20
VGE
(V)
0
50
100
150
200
250
300
350
ICE
(A)
TJ = 175°C
TJ = 25°C
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
5101520
VGE (V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 25A
ICE
= 50A
ICE
= 100A
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
5101520
VGE (V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 25A
ICE
= 50A
ICE
= 100A
10 20 30 40 50 60 70 80 90 100
IC (A)
0
1000
2000
3000
4000
5000
Energy (µJ)
EOFF
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
5101520
VGE
(V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 25A
ICE
= 50A
ICE
= 100A
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
0.0 1.0 2.0 3.0
VF (V)
1
10
100
1000
IF (A)
-40°C
25°C
175°C
Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
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0 20 40 60 80 100
Rg ()
1000
2000
3000
4000
5000
Energy (µJ)
EOFF
8 1012141618
VGE (V)
4
8
12
16
20
Time (µs)
70
140
210
280
350
Current (A)
Tsc Isc
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
0100 200 300 400 500
VCE
(V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 10203040506070
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE
, Gate-to-Emitter Voltage (V)
VCES
= 400V
VCES
= 300V
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 50A
020 40 60 80 100
RG ()
10
100
1000
Swiching Time (ns)
tdOFF
tF
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
020 40 60 80 100
IC (A)
10
100
1000
Swiching Time (ns)
tdOFF
tF
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C
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1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.011823 0.000009
0.150739 0.000142
0.223153 0.002294
0.153695 0.014121
Fig 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Ri (°C/W) i (sec)
0.073136 0.000027
0.471726 0.000218
1.318881 0.002656
0.686257 0.026124
25 50 75 100 125 150 175
Case Temperature (°C)
0
20
40
60
80
100
120
140
Repetitive Peak Current (A)
D= 0.5
D= 0.2
D= 0.1
Fig. 19 - Maximum Diode Repetitive Forward
Peak Current vs. Case Temperature
25 50 75 100 125 150 175
TJ , Temperature (°C)
2.0
3.0
4.0
5.0
6.0
VGE(th), Gate Threshold Voltage (Normalized)
IC = 1.0mA
Fig. 20 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
T = 50us
t
Square Pulse,
f = 20KHz
D = t/T
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0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
Fig.C.T.5 - BVCES Filter Circuit
Fig.C.T.3 - S.C. SOA Circuit
DC
4X
DUT
VCC
IRGP4078DPbF/EP
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-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-3 -0.5 2 4.5 7
I
CE
(A)
V
CE
(V)
time(µs)
90% I
CE
5% V
CE
10% I
CE
Eoff Loss
tf
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. S.C. Waveform @ TJ = 25°C
using Fig. CT.3
-100
0
100
200
300
400
500
-100
0
100
200
300
400
500
-5 0 5 10
Ice (A)
Vce ( V )
time (µs)
VCE
ICE
IRGP4078DPbF/EP
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
IRGP4078DPbF/EP
10 www.irf.com © 2012 International Rectifier January 8, 2013
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
ASSEMBLY YEAR 0 = 2000
ASSEM BLED ON W W 35, 2000
IN THE ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CODE 5657
WITH ASSEMBLY PART NUM BER
DATE CODE
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
035H
5 6 5 7
W EEK 35
LINE H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
IRGP4078DPbF/EP
11 www.irf.com © 2012 International Rectifier January 8, 2013
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Industrial†
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC N/A
RoHS Compliant Yes
TO-247AD N/A
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
