PD - 95428A IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free VCES = 600V VCE(on) typ. = 1.72V G @VGE = 15V, IC = 20A E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES I C @ TC = 25C I C @ TC = 100C ICM ILM VGE EARV P D @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 40 20 160 160 20 15 160 65 -55 to +150 V A V mJ W C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Thermal Resistance Parameter RJC RCS RJA Wt www.irf.com Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. --------------------- -----0.50 -----2 (0.07) 0.77 -----80 ------ Units C/W g (oz) 1 02/18/10 IRG4BC40UPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 18 ------------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V (BR)CES V (BR)ECS Typ. ------0.63 1.72 2.15 1.7 ----13 18 ------------- Max. Units Conditions ---V V GE = 0V, IC = 250A ---V V GE = 0V, IC = 1.0A See Fig. 2, 5 ---- V/C V GE = 0V, IC = 1.0mA 2.1 I C = 20A VGE = 15V ---V I C = 40A ---I C = 20A, TJ = 150C 6.0 V CE = V GE, IC = 250A ---- mV/C V CE = V GE, IC = 250A ---S V CE = 100V, IC = 20A 250 V GE = 0V, VCE = 600V 2.0 A V GE = 0V, VCE = 10V, TJ = 25C 2500 V GE = 0V, VCE = 600V, TJ = 150C 100 n A V GE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------- Typ. 100 16 40 34 19 110 120 0.32 0.35 0.67 30 19 220 160 1.4 7.5 2100 140 34 Max. Units Conditions 150 I C = 20A 25 nC V CC = 400V See Fig. 8 60 V GE = 15V ---TJ = 25C ---ns I C = 20A, VCC = 480V 175 V GE = 15V, RG = 10 180 Energy losses include "tail" ------mJ See Fig. 10, 11, 13, 14 1.0 ---TJ = 150C, ---ns I C = 20A, VCC = 480V ---V GE = 15V, RG = 10 ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---V GE = 0V ---pF V CC = 30V See Fig. 7 --- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. (see fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC40UPbF 60 For both: Triangular wave: Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified 50 I Clamp voltage: 80% of rated Load Current ( A ) Power Dissipation = 28W 40 Square wave: 30 60% of rated voltage 20 I 10 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 100 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 1000 TJ = 25C TJ = 150C 10 VGE = 15V 20s PULSE WIDTH A 1 0.1 1 10 100 TJ = 150C TJ = 25C 10 VCC = 10V 5s PULSE WIDTH A 1 4 6 8 10 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics TC = 25C Fig. 3 - Typical Transfer Characteristics www.irf.com 12 3 IRG4BC40UPbF 2.5 V GE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 40 30 20 10 A 0 25 50 75 100 125 VGE = 15V 80s PULSE WIDTH I C = 40A 2.0 IC = 20A 1.5 I C = 10A A 1.0 -60 150 TC , Case Temperature (C) -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 0.02 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 1 2 0.01 0.01 0.00001 1 t2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC40UPbF 20 Cies 3000 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 4000 2000 Coes Cres 1000 1 10 16 12 8 4 A 0 A 0 VCE = 400V I C = 20A 0 100 20 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.0 10 = 480V = 15V = 25C = 20A 0.9 0.8 0.7 A 0.6 0 10 20 30 40 50 60 R G , Gate Resistance ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 100 120 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TJ IC 60 Qg , Total Gate Charge (nC) VCE, Collector-to-Emitter Voltage (V) 1.1 40 RG = 10 VGE = 15V VCC = 480V I C = 40A I C = 20A 1 I C = 10A A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC40UPbF RG TJ VCC VGE 1000 = 10 = 150C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 4.0 3.0 2.0 1.0 A 0.0 0 10 20 30 40 I C , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 50 VGE = 20V GE TJ = 125C 100 SAFE OPERATING AREA 10 1 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC40UPbF RL = VCC ICM L D.U.T. VC * 50V 0 - VCC 1000V c 480F d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Pulsed Collector Current Test Circuit Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5s E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4BC40UPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& Note: "P" in assembly line position indicates "Lead-Free" ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2010 8 www.irf.com