NEC's SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES * SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz (Units in mm) PACKAGE OUTLINE SO1 * HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 0.2 * GATE LENGTH: LG 0.20 m 2. 1 0 * GATE WIDTH: WG = 160 m 0. 2 2 K DESCRIPTION NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 4 3 0.5 TYP 2.00.2 1. Source 2. Drain 3. Source 4. Gate 0.65 TYP 1.9 0.2 1.6 0.125 0.05 1.5 MAX 0.4 MAX 4.0 0.2 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS Gain1, UNITS MIN dB 12 TYP MAX GA Associated NF Noise Figure1, VDS = 2 V, ID = 10 mA, f = 12 GHz gm Transconductance, VDS = 2 V, ID = 10 mA mS 40 55 Saturated Drain Current, VDS = 2 V, VGS = 0 V mA 15 40 70 Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 A V -0.2 -0.7 -2.0 Gate to Source Leakage Current, VGS = -3 V uA 0.5 10 IDSS VP IGSO VDS = 2 V, ID = 10 mA, f = 12 GHz NE3210S01 S01 dB 13.5 0.35 0.45 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE3210S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS IGS Gate Current A 100 PT Total Power Dissipation mW 165 TCH Channel Temperature C 125 TSTG Storage Temperature C -65 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL MOUNT PAD LAYOUT (Units in mm) 2.4 mm TYP 2.4 mm TYP RECOMMENDED OPERATING CONDITIONS (TA = 25C) PART NUMBER SYMBOLS PARAMETERS Drain to Source Voltage VDS IDS Drain Current PIN Input Power NE3210S01 UNITS MIN TYP MAX V 2 3 mA 10 15 dBm 0 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. NFMIN GA (GHz) (dB) (dB) MAG ANG Rn/50 21.2 19.5 18.2 16.2 14.7 13.5 12.9 12.3 11.9 0.94 0.80 0.66 0.50 0.38 0.29 0.27 0.33 0.39 12 26 44 68 97 133 177 -129 -82 0.38 0.33 0.26 0.18 0.11 0.09 0.08 0.11 0.23 VDS = 2 V, ID = 10 mA 2.0 0.25 4.0 0.26 6.0 0.28 8.0 0.30 10.0 0.32 12.0 0.34 14.0 0.42 16.0 0.56 18.0 0.72 OPT ORDERING INFORMATION PART NUMBER SUPPLY FORM NE3210S01-T1 Tape & Reel 1000 pcs/reel NE3210S01-T1B Tape & Reel 4000 pcs/reel MARKING NE3210S01 TYPICAL PERFORMANCE CURVES (TA = 25C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 VGS = 0.00 V Drain Current, ID (mA) 0.90 V 50 Drain Current, ID (mA) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 0.18 V 40 0.27 V 30 0.36 V 0.45 V 20 0.54 V 10 0.63 V 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 100 50 85 40 70 30 45 20 30 10 15 0 -1.20 4.0 0 -1.0 -0.8 -0.6 -0.4 -0.2 0 0.2 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 250 24 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB) Total Power Dissipation, (PT) mW 60 200 150 100 50 VDS = 2 V ID = 10 mA 20 MSG. MAG. 16 |S21S| 12 2 8 4 0 50 100 150 200 250 1 2 4 6 8 10 14 20 Ambient Temperature, TA (C) Frequency, f (GHz) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY NOISE FIGURE and ASSOCIATED GAIN vs. DRAIN CURRENT 30 24 VDS = 2 V f = 12 GHz 1.0 12 0.5 8 13 2.0 12 1.5 11 1.0 0.5 NF 0 NF 4 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 0 10 20 Drain Current, ID (mA) 30 Associated Gain, GA (dB) 16 15 GA 14 Noise Figure, NF (dB) Noise Figure, NF (dB) 20 GA Associated Gain, GA (dB) VDS = 2 V ID = 10 mA NE3210S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 90 120 j100 j25 150 S11 S22 26.5 GHz 26.5 GHz j10 0 10 25 50 100 S22 0.1 GHz 60 30 S21 0.1 GHz 180 0 S11 0.1 GHz 0 S21 26.5 GHz S12 0.1 GHz -j10 Coordinates in Ohms Frequency in GHz VD = 2 V, ID = 5 mA -j100 -j25 S12 26.5 GHz -150 -120 -30 -60 -90 -j50 NE3210S01 VD = 2 V, ID = 5 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 26.50 S11 MAG 1.001 1.000 1.000 0.999 0.997 0.995 0.992 0.987 0.978 0.968 0.954 0.938 0.920 0.879 0.835 0.778 0.680 0.589 0.505 0.481 0.461 0.453 0.468 0.521 0.587 0.658 0.720 0.762 0.793 0.819 0.849 0.866 0.863 0.868 0.865 0.859 S21 ANG -1.14 -2.12 -3.08 -4.18 -4.94 -6.83 -10.11 -15.20 -20.81 -26.46 -32.09 -37.61 -43.04 -53.83 -64.32 -77.53 -92.29 -109.87 -127.92 -149.57 -175.91 155.80 129.34 109.11 92.69 79.53 68.06 58.38 51.94 48.37 43.44 38.86 34.84 29.14 28.40 28.76 MAG 3.405 3.393 3.393 3.396 3.345 3.347 3.350 3.346 3.362 3.373 3.388 3.386 3.381 3.378 3.428 3.525 3.539 3.527 3.432 3.490 3.442 3.273 3.017 2.774 2.545 2.325 2.045 1.773 1.537 1.366 1.238 1.124 1.009 0.949 0.918 0.895 S12 ANG 178.54 177.73 176.83 175.50 173.68 171.18 167.44 161.27 154.97 148.74 142.45 136.09 129.89 117.91 106.08 92.97 78.21 63.32 49.90 35.80 19.40 3.28 -12.03 -25.92 -39.53 -53.80 -67.87 -79.76 -89.63 -97.66 -106.37 -116.19 -124.88 -132.34 -138.91 -143.63 MAG 0.001 0.003 0.004 0.006 0.007 0.010 0.014 0.021 0.028 0.035 0.041 0.047 0.053 0.062 0.070 0.081 0.086 0.091 0.089 0.096 0.104 0.107 0.104 0.102 0.098 0.098 0.096 0.093 0.089 0.089 0.090 0.089 0.087 0.084 0.086 0.084 S22 ANG 82.96 88.10 88.76 86.87 85.87 84.12 81.51 77.55 73.36 69.02 64.57 59.71 54.85 45.72 38.30 29.68 17.34 7.85 0.93 -2.08 -10.23 -18.84 -26.21 -31.03 -35.03 -38.38 -43.64 -47.93 -50.59 -52.07 -56.92 -63.10 -67.53 -71.30 -71.66 -74.09 MAG 0.732 0.731 0.732 0.732 0.735 0.735 0.732 0.726 0.718 0.709 0.698 0.685 0.670 0.638 0.604 0.553 0.469 0.398 0.335 0.302 0.250 0.210 0.214 0.256 0.309 0.389 0.476 0.553 0.603 0.640 0.685 0.721 0.748 0.751 0.736 0.744 ANG -0.85 -1.97 -3.04 -3.93 -4.73 -6.68 -9.24 -13.91 -18.29 -22.77 -27.41 -32.00 -36.40 -44.54 -52.54 -62.26 -73.32 -86.69 -97.84 -114.77 -139.98 -173.02 151.67 126.40 109.03 95.15 82.56 74.44 67.90 62.36 57.59 52.26 48.09 46.97 40.30 34.46 K MAG1 -0.03 0.00 -0.03 0.04 0.08 0.11 0.12 0.15 0.19 0.23 0.27 0.33 0.39 0.50 0.60 0.68 0.89 1.03 1.22 1.14 1.11 1.16 1.27 1.30 1.30 1.18 1.10 1.03 1.02 0.94 0.77 0.65 0.63 0.60 0.66 0.69 (dB) 34.20 30.64 28.99 27.65 26.76 25.30 23.77 22.03 20.82 19.89 19.15 18.54 18.06 17.34 16.93 16.40 16.15 14.86 13.05 13.32 13.13 12.40 11.50 11.09 10.89 11.16 11.42 11.69 11.62 11.85 11.36 11.02 10.67 10.54 10.26 10.25 Note: 1. Gain Calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE3210S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 90 120 j100 j25 60 150 30 S11 S22 26.5 GHz 26.5 GHz j10 0 10 25 50 100 S22 0.1 GHz 180 0 S21 0.1 GHz S11 0.1 GHz 0 S21 26.5 GHz S12 0.1 GHz -j10 Coordinates in Ohms Frequency in GHz VD = 2 V, ID = 10 mA -j100 -j25 S12 26.5 GHz -150 -120 -30 -60 -90 -j50 NE3210S01 VD = 2 V, ID = 10 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 26.50 S11 MAG 1.000 1.000 1.000 0.999 0.996 0.993 0.989 0.980 0.967 0.951 0.931 0.908 0.882 0.825 0.766 0.694 0.582 0.488 0.407 0.394 0.391 0.406 0.441 0.507 0.578 0.652 0.718 0.761 0.790 0.812 0.841 0.857 0.851 0.856 0.849 0.843 S21 ANG -1.27 -2.34 -3.43 -4.65 -5.48 -7.58 -11.19 -16.80 -22.91 -29.06 -35.15 -41.09 -46.86 -58.15 -68.97 -82.82 -97.90 -116.40 -135.11 -158.15 173.89 144.90 119.35 101.09 86.36 74.71 64.03 54.95 48.81 45.64 41.18 36.68 32.71 27.01 26.42 26.81 MAG 4.899 4.887 4.884 4.886 4.814 4.812 4.806 4.787 4.785 4.770 4.754 4.713 4.663 4.565 4.529 4.537 4.418 4.301 4.109 4.111 3.994 3.761 3.455 3.183 2.934 2.701 2.400 2.110 1.857 1.679 1.540 1.418 1.291 1.229 1.202 1.180 S12 ANG 178.46 177.42 176.29 174.90 172.98 170.21 166.08 159.23 152.33 145.49 138.61 131.78 125.12 112.41 100.03 86.54 71.98 57.78 45.24 31.91 16.52 1.58 -12.50 -25.26 -37.87 -51.30 -64.66 -75.90 -85.48 -93.42 -102.29 -112.28 -121.28 -129.13 -136.41 -141.30 MAG 0.001 0.003 0.004 0.005 0.006 0.009 0.013 0.019 0.025 0.031 0.037 0.042 0.047 0.055 0.061 0.070 0.074 0.079 0.080 0.091 0.102 0.108 0.109 0.111 0.109 0.110 0.108 0.105 0.100 0.100 0.100 0.098 0.095 0.092 0.094 0.093 S22 ANG 88.31 87.85 88.67 86.60 85.34 84.29 81.96 78.12 74.21 70.41 65.91 61.37 56.77 48.65 42.30 34.76 24.44 16.93 12.32 9.33 1.30 -7.33 -14.99 -21.27 -26.89 -32.42 -39.12 -44.73 -48.33 -50.92 -56.31 -62.75 -67.41 -71.40 -72.43 -74.92 MAG 0.654 0.653 0.653 0.654 0.658 0.657 0.654 0.647 0.638 0.628 0.614 0.599 0.583 0.549 0.515 0.463 0.380 0.314 0.261 0.230 0.173 0.132 0.151 0.208 0.269 0.352 0.440 0.517 0.564 0.597 0.640 0.675 0.702 0.706 0.688 0.694 ANG -0.82 -2.00 -3.07 -3.96 -4.64 -6.56 -9.07 -13.65 -17.91 -22.27 -26.72 -31.08 -35.15 -42.36 -49.21 -57.82 -66.37 -77.56 -85.89 -102.84 -129.97 -172.68 140.72 114.68 98.87 87.44 76.72 69.92 64.15 59.30 55.17 50.52 46.98 46.39 40.12 34.43 K MAG1 -0.03 -0.01 -0.01 0.04 0.10 0.13 0.16 0.19 0.25 0.30 0.36 0.43 0.50 0.64 0.75 0.84 1.06 1.18 1.33 1.21 1.15 1.16 1.21 1.20 1.18 1.09 1.02 0.97 0.96 0.91 0.77 0.67 0.65 0.61 0.65 0.66 (dB) 36.47 32.67 31.02 29.78 28.83 27.34 25.79 24.05 22.83 21.88 21.12 20.49 19.99 19.22 18.73 18.10 16.21 14.77 13.66 13.79 13.56 12.97 12.22 11.89 11.74 12.09 12.66 13.03 12.68 12.25 11.86 11.60 11.32 11.24 11.05 11.04 Note: 1. Gain Calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE3210S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 90 120 j100 j25 60 150 S11 S22 26.5 GHz 26.5 GHz S22 0.1 GHz 100 0 j10 0 10 25 50 180 S11 0.1 GHz 30 S21 0.1 GHz -j10 Coordinates in Ohms Frequency in GHz VD = 2 V, ID = 20 mA -j100 -j25 0 S21 26.5 GHz -150 S12 0.1 GHz S12 26.5 GHz -120 -30 -60 -90 -j50 NE3210S01 VD = 2 V, ID = 20 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 26.00 26.50 S11 MAG 1.001 1.000 1.000 0.998 0.995 0.991 0.986 0.974 0.956 0.934 0.908 0.878 0.845 0.777 0.709 0.630 0.513 0.420 0.342 0.334 0.340 0.368 0.412 0.485 0.560 0.638 0.709 0.755 0.787 0.807 0.837 0.852 0.846 0.849 0.840 0.835 S21 ANG -1.35 -2.51 -3.69 -4.98 -5.88 -8.15 -11.99 -17.98 -24.42 -30.87 -37.20 -43.32 -49.17 -60.41 -70.94 -84.63 -99.19 -117.65 -136.22 -159.96 170.90 141.32 115.91 98.43 84.46 73.45 63.12 54.05 47.82 44.84 40.34 35.93 31.86 26.10 25.54 26.02 MAG 6.350 6.337 6.331 6.330 6.237 6.225 6.204 6.159 6.120 6.063 5.992 5.895 5.779 5.554 5.407 5.307 5.065 4.867 4.607 4.577 4.426 4.158 3.825 3.540 3.281 3.045 2.727 2.418 2.146 1.962 1.815 1.686 1.548 1.488 1.467 1.446 S12 ANG 178.44 177.12 175.80 174.36 172.35 169.31 164.85 157.43 150.06 142.74 135.43 128.25 121.34 108.25 95.77 82.35 68.31 54.88 43.14 30.55 15.93 1.81 -11.53 -23.59 -35.66 -48.59 -61.63 -72.63 -82.09 -89.92 -98.91 -109.02 -118.22 -126.33 -134.00 -139.10 MAG 0.001 0.002 0.004 0.005 0.006 0.008 0.011 0.017 0.022 0.028 0.033 0.037 0.042 0.049 0.054 0.063 0.067 0.074 0.077 0.090 0.102 0.110 0.114 0.117 0.117 0.118 0.116 0.113 0.108 0.107 0.107 0.105 0.102 0.099 0.101 0.099 S22 ANG 100.26 90.28 87.69 87.54 86.52 84.90 82.77 79.05 75.64 71.93 67.90 63.92 59.78 52.66 47.49 40.74 32.02 25.26 21.16 17.65 9.26 0.21 -8.01 -15.36 -21.73 -28.19 -35.54 -41.78 -46.06 -49.01 -54.84 -61.41 -66.55 -70.76 -72.25 -74.52 MAG 0.592 0.589 0.589 0.590 0.594 0.594 0.591 0.584 0.575 0.564 0.551 0.536 0.521 0.491 0.464 0.417 0.342 0.284 0.239 0.210 0.146 0.090 0.112 0.177 0.242 0.327 0.419 0.496 0.543 0.573 0.614 0.648 0.675 0.677 0.655 0.660 ANG -0.73 -1.97 -2.99 -3.85 -4.39 -6.19 -8.54 -12.82 -16.80 -20.81 -24.92 -28.84 -32.40 -38.43 -44.02 -51.35 -57.35 -66.38 -72.34 -88.57 -113.66 -161.41 135.76 108.58 93.80 83.95 74.18 67.89 62.26 57.59 53.81 49.53 46.40 46.14 40.16 34.52 K MAG1 -0.17 -0.01 0.01 0.05 0.11 0.15 0.19 0.24 0.31 0.38 0.45 0.53 0.61 0.76 0.88 0.96 1.16 1.25 1.34 1.21 1.14 1.13 1.16 1.14 1.11 1.04 0.98 0.94 0.92 0.88 0.77 0.67 0.64 0.59 0.62 0.63 (dB) 36.97 34.46 32.52 31.37 30.44 28.93 27.38 25.64 24.38 23.41 22.62 21.97 21.43 20.57 19.97 19.23 16.31 15.21 14.25 14.32 14.09 13.54 12.85 12.57 12.45 12.92 13.70 13.32 12.99 12.63 12.29 12.07 11.83 11.77 11.62 11.63 Note: 1. Gain Calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE3210S01 NE3210S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.68nH Rdx 6 ohms Rgx 0.72nH 6 ohms CGS_PKG 0.04pF Lsx 0.1nH CDS_PKG 0.035PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -0.798 RG 8 VTOSC 0 RD UNITS Parameter Units time seconds 0.5 capacitance farads ALPHA 8 RS 3 inductance henries BETA 0.0952 RGMET 0 resistance ohms GAMMA 0.072 KF 0 voltage volts GAMMADC 0.065 AF 1 current amps Q 2.5 TNOM 27 DELTA 0.5 XTI 3 VBI 0.6 EG 1.43 IS 1e-14 VTOTC 0 N 1 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 4e-12 CDS 0.12e-12 RDB 5000 CBS 1e-9 CGSO 0.36e-12 CGDO 0.014e-12 DELTA1 0.3 DELTA2 0.6 FC 0.5 VBR Infinity MODEL RANGE Frequency: 0.1 to 22.5 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA Date: 1/99 (1) Series IV Libra TOM Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/01/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.