A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 40 mA 25 28 V
BVCER IC = 20 mA RBE = 51 Ω40 V
BVCBO IC = 20 mA 45 V
ICBO VCB = 20 V 5.0 mA
BVEBO IE = 5 mA 3.0 V
hFE VCE = 20 V IC = 500 mA 10 --
COB VCB = 25 V 20 pF
PG
IMD3
VCE = 25 V IC = 2 x 900 mA PREF = 14 W
F = 860 MHz
Vision = -8 dB Sound = -7 dB SB = -16 dB
8.5 9.5
-47
dB
dB
NPN SILICON RF POWER TRANSISTOR
TPV595A
DESCRIPTION:
The TPV595A is Designed for Class
AB Push Pull, Common Emitter from
470 to 860 MHz Applications.
FEATURES:
•• Gold Metalization
• Emitter Ballast Resistors
• Internal Input Matching
MAXIMUM RATINGS
IC2 x 2.6 A
VCB 45 V
PDISS 65 W @ TC = 25 OC
TJ-50 OC to +200 OC
TSTG -50 OC to +200 OC
θθJC
2.5 OC/W
PACKAGE STYLE .250 BAL FLG
Order Code: ASI10835
MINIMUM
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
B
C
D
E
F
G
A
MAXIMUM
.670 / 17.01
.255 / 6.48
inches / mm
.125 / 3.18
H
DIM
K
L
I
J
.315 / 8.00
.002 / 0.05
.075 1.91
.327 / 8.31
.006 / 0.15
.095 / 2.41
N
M.245 / 6.22 .257 / 6.53
.060 / 1.52
.092 / 2.34
.055 / 1.40 .065 / 1.65
.190 / 4.83
K
.020 x 45°
J
F
E
D C
H I
G
LM
.050 x 45°
N
B A
Ø.130 NOM.
.065 / 1.65
.555 / 14.10
.739 / 18.77 .565 / 14.35
.750 / 19.05
Collector - 2 places
Emitter connected to flange
Base - 2 places
