1. Product profile
1.1 General description
Passivated high voltage, high commutation triac in a full pack, plastic package. This triac
is intended for use in motor control circuits where high blocking voltage, high static and
dynamic dV/dt as well as high dI/dt can occur. This device will commutate the full rated
RMS current at the maximum rated junction temperature, without the aid of a snubber.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
SOT
BTA208X-1000C
Three quadrant triacs high commutation
Rev. 01 — 4 October 2005 Product data sheet
■False trigger immunity ■Isolated package
■1000 V VDRM guaranteed
■Motor control ■Reversible induction motors
■ITSM ≤65 A ■IT(RMS) ≤8A
■VDRM ≤1000 V ■IGT ≤35 mA
Table 1: Pinning
Pin Description Simplified outline Symbol
1 main terminal 1 (T1)
SOT186A (3-lead TO-220F)
2 main terminal 2 (T2)
3 gate (G)
mb mounting base; isolated
321
mb
sym051
T1
G
T2
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 2 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
BTA208X-1000C TO-220F plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 ‘full pack’ SOT186A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 1000 V
IT(RMS) RMS on-state current full sine wave; Th≤73 °C; see
Figure 4 and 5-8A
ITSM non-repetitive peak on-state current full sine wave; Tj=25°C prior
to surge; see Figure 2 and 3
t = 20 ms - 65 A
t = 16.7 ms - 71 A
I2tI
2t for fusing t = 10 ms - 21 A2s
dlT/dt rate of rise of on-state current ITM = 12 A; IG= 0.2 A;
dIG/dt = 0.2 A/µs- 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature −40 +150 °C
Tjjunction temperature - 125 °C
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 3 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
α= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aaa967
4
8
12
Ptot
0
IT(RMS) (A)
0 108462
2
6
10
(W)
71
80
89
107
116
125
98
Th(max)
(°C)
α
α
α = 180°
120°
90°
60°
30°
003aaa968
40
20
60
80
ITSM
0
n
1 103
102
10
(A)
ITSM
t
IT
T
j
= 25 °C max
tp
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 4 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz; Th≤73 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values Fig 5. RMS on-state current as a function of heatsink
temperature; maximum values
003aab121
tp (ms)
10−2102
1010−11
102
103
ITSM
(A)
10
dlT/dt limit
ITSM
t
IT
T
j(init)
= 25 °C max
T
0
5
10
15
20
25
surge duration (s)
10−210110−1
003aaa970
IT(RMS)
(A)
Th (°C)
−50 150100050
003aaa969
4
6
2
8
10
IT(RMS)
0
73 °C
(A)
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 5 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
5. Thermal characteristics
[1] Full or half cycle; with heatsink compound.
[2] Full or half cycle; without heatsink compound.
6. Isolation characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-h) thermal resistance from junction to
heatsink see Figure 6 [1] - - 4.5 K/W
see Figure 6 [2] - - 6.5 K/W
Rth(j-a) thermal resistance from junction to
ambient in free air - 55 - K/W
(1) Unidirectional without heatsink compound
(2) Unidirectional with heatsink compound
(3) Bidirectional without heatsink compound
(4) Bidirectional with heatsink compound
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width
003aaa972
tp (s)
10−511010−1
10−2
10−410−3
1
10−1
10
Zth(j-h)
10−2
(K/W)
(1)
(2)
(3)
(4)
tp
PD
t
Table 5: Isolation limiting values and characteristics
T
h
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Visol(rms) RMS isolation voltage f = 50 Hz to 60 Hz; sinusoidal
waveform; RH ≤65 %; clean and dust
free; from all three terminals to
external heatsink
- - 2500 V
Cisol isolation capacitance f = 1 MHz; from pin 2 to external
heatsink -10-pF
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 6 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
7. Characteristics
[1] Device will not trigger in the T2− G+ quadrant.
Table 6: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD= 12 V; IT= 0.1 A; see Figure 8 [1]
T2+ G+ 2 6 35 mA
T2+ G−2 1335mA
T2− G−2 2335mA
ILlatching current VD= 12 V; IGT = 0.1 A; see
Figure 10
T2+ G+ - 25 50 mA
T2+ G−- 4875mA
T2− G−- 3050mA
IHholding current VD= 12 V; IGT = 0.1 A; see
Figure 11 - 2050mA
VTon-state voltage IT= 10 A; see Figure 9 - 1.3 1.65 V
VGT gate trigger voltage VD= 12 V; IT= 0.1 A; see Figure 7 - 0.7 1.5 V
VD= 400 V; IT= 0.1 A; Tj= 125 °C 0.25 0.4 - V
IDoff-state current VD=V
DRM(max); Tj= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage VDM =67% V
DRM(max);
Tj= 125 °C;exponentialwaveform;
gate open circuit
1000 4000 - V/µs
dIcom/dt rate of change of
commutating current VDM = 400 V; Tj= 125 °C;
IT(RMS) = 8 A; without snubber;
gate open circuit; see Figure 12
12 32 - A/ms
tgt gate-controlled
turn-on time ITM = 12 A; VD=V
DRM(max);
IG= 0.1 A; dIG/dt = 5 A/µs-2-µs
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 7 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function of
junction temperature Fig 8. Normalized gate trigger current as a function of
junction temperature
Vo = 1.22 V; RS= 0.04 Ω
(1) Tj= 125 °C; typical values
(2) Tj= 125 °C; maximum values
(3) Tj=25°C; maximum values
Fig 9. On-state current as a function of on-state
voltage Fig 10. Normalized latching current as a function of
junction temperature
Tj (°C)
−50 150100050
001aab101
0.8
1.2
1.6
0.4
VGT(Tj)
VGT(25°C)
Tj (°C)
−50 150100050
001aac669
1
2
3
0
(1)
(2)
(3)
IGT (Tj)
IGT (25°C)
003aaa971
VT (V)
0321
10
15
5
20
25
IT
(A)
0
(1) (2) (3)
Tj (°C)
−50 150100050
001aab100
1
2
3
0
IL(Tj)
IL(25°C)
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 8 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
Fig 11. Normalized holding current as a function of
junction temperature Fig 12. Rate of change of commutating current as a
function of junction temperature; typical and
minimum values
Tj (°C)
−50 150100050
001aab099
1
2
3
0
IH(Tj)
IH(25°C)
003aaa973
Tj (°C)
20 14010060
102
10
103
dIcom/dt
1
(A/ms)
typ
min
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 9 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
8. Package outline
Fig 13. Package outline SOT186A (3-lead TO-220F)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT186A 3-lead TO-220F
0 5 10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack' SOT186A
A
A1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
D
D1
L
L2L1
b1
b2
e1
e
bwM
123
q
E
P
T
UNIT D
b1D1eqQPL
cL2(1)
max.
e1
A
5.08 3
mm 4.6
4.0
A1
2.9
2.5
b
0.9
0.7 1.1
0.9
b2
1.4
1.0 0.7
0.4 15.8
15.2 6.5
6.3
E
10.3
9.7 2.54 14.4
13.5
T(2)
2.5 0.4
L1
3.30
2.79
j
2.7
1.7
K
0.6
0.4 2.6
2.3 3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
02-03-12
02-04-09
mounting
base
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 10 of 12
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
9. Revision history
Table 7: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BTA208X-1000C_1 20051004 Product data sheet - - -
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
BTA208X-1000C_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01 — 4 October 2005 11 of 12
10. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights. Date of release: 4 October 2005
Document number: BTA208X-1000C_1
Published in The Netherlands
Philips Semiconductors BTA208X-1000C
Three quadrant triacs high commutation
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Isolation characteristics . . . . . . . . . . . . . . . . . . 5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information . . . . . . . . . . . . . . . . . . . . 11
