Power Management & Multimarket
BGS14PN10
SP4T high linearity, high power RF Switch
Data Sheet
Revision 1.3 - 2016-08-24
Edition 2016-08-24
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2012 Infineon Technologies AG
All Rights Reserved.
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BGS14PN10
Confidential
Revision History
Document No.: BGS14PN10.pdf
Revision History: 1.3
Previous Version: 1.2
Page Subjects (major changes since last revision)
1 Updated title
Trademarks of Infineon Technologies AG
AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM,CoolGaNTM,CoolMOSTM, CoolSETTM, CoolSiCTM, CORECONTROLTM,
DAVETM, DI-POLTM,EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM,
FCOSTM, HITFETTM, HybridPACKTM, ISOFACETM, I2RFTM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM,
OmniTuneTM, OptiMOSTM, ORIGATM, OPTIGATM, PROFETTM, PRO-SILTM, PRIMARIONTM, PrimePACKTM, RASICTM,
ReverSaveTM, SatRICTM, SIEGETTM, SIPMOSTM , SOLID FLASHTM, SmartLEWISTM, TEMPFETTM, thinQ!TM, TriCoreTM,
TRENCHSTOPTM.
Other Trademarks
Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM,
THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth
SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa
Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium.
HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data
Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,
Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of
NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,
MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM
Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc.
SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO
YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI
KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of
Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex
Limited.
Last Trademarks Update 2012-12-13
Data Sheet 3 Revision 1.3 - 2016-08-24
BGS14PN10
Confidential Contents
Contents
1 Features 5
2 Product Description 6
3 Maximum Ratings 7
4 Operation Ranges 8
5 Logic Table 8
6 RF Characteristics for RF1 and RF3 9
7 RF Characteristics for RF2 and RF4 10
8 RF large signal parameter 11
9 Package Outline and Pin Configuration 13
List of Figures
1 BGS14PN10blockdiagram .......................................... 7
2 Pinout(topview) ................................................ 13
3 PackageDimensionsDrawing......................................... 14
4 Landpatternandstencilmask ........................................ 14
5 Marking ..................................................... 15
6 Tapedrawing .................................................. 15
List of Tables
1 OrderingInformation.............................................. 6
2 MaximumRatings,TableI........................................... 7
3 MaximumRatings,TableII........................................... 8
4 OperationRanges ............................................... 8
5 LogicTable ................................................... 8
6 RFSpecifications................................................ 9
7 RFSpecifications................................................ 10
8 RFlargesignalSpecifications......................................... 11
9 RFlargesignalSpecifications......................................... 11
10 LogicTable ................................................... 12
11 LogicTable ................................................... 12
12 LogicTable ................................................... 12
13 Pindescription ................................................. 13
14 Mechanicaldata ................................................ 13
Data Sheet 4 Revision 1.3 - 2016-08-24
BGS14PN10
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BGS14PN10 SP4T high linearity, high power RF Switch
1 Features
•High max RF power: 40 dBm CW @ 900 MHz, room tempera-
ture
•Two ultra-low loss ports (RF1 and RF3):
0.19 dB @ f=0.9 GHz, PIN =38 dBm
0.29 dB @ f=1.9 GHz, PIN =38 dBm
0.51 dB @ f=2.7 GHz, PIN =33 dBm
1.20 dB @ f=3.8 GHz, PIN =33 dBm
1.90 dB @ f=5.8 GHz, PIN =33 dBm
•Two low loss ports (RF2 and RF4):
0.32 dB @ f=0.9 GHz, PIN =38 dBm
0.40 dB @ f=1.9 GHz, PIN =38 dBm
0.64 dB @ f=2.7 GHz, PIN =33 dBm
1.19 dB @ f=3.8 GHz, PIN =33 dBm
1.78 dB @ f=5.8 GHz, PIN =33 dBm
•No DC decoupling components required, if no external DC is
applied on RF ports
•High ESD robustness
•Low harmonic generation
•High linearity
RF1/RF3 72 dBm IIP3
RF2/RF4 74 dBm IIP3
•No power supply blocking required
•Supply voltage range: 1.8 to 3.6 V
•No insertion loss change within supply voltage range
•No linearity change within supply voltage range
•Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE Applications
•Mobile cellular Rx/Tx applications, suitable for LTE/3G
•Applicable for main path and entire RF-Front-end without any
power restrictions in mobile communication
DL/UL CA and MIMO
Micro/Pico Cells / Cellular base stations
Test equipment
Suitable for SV-LTE
•0.5 to 6.0 GHz coverage
•Small form factor 1.1 mm x 1.5 mm
•400 µm pad pitch
•RoHS and WEEE compliant package
Data Sheet 5 Revision 1.3 - 2016-08-24
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2 Product Description
The BGS14PN10 is a Single Pole Quad Throw (SP4T) RF antenna aperture switch optimized for mobile phone
applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS
or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch
maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors
at the RF ports are only required if DC voltage is applied externally.
Table 1: Ordering Information
Type Package Marking Chip
BGS14PN10 TSNP10-1 4P M4821C
Data Sheet 6 Revision 1.3 - 2016-08-24
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RF1
RFC
VBATT
CTRL1
CTRL2
RF3
Voltage
Regulator
Chargepump
GND
Driver
RF4
RF2
Figure 1: BGS14PN10 block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA= 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Frequency Range f0.5 – – GHz 1)
Supply voltage VDD -0.5 – 3.6 V –
Storage temperature range TSTG -55 – 150 ◦C –
RF input power PRF _TRx – – 40 dBm 25% duty cycle
ESD capability Human Body Model VESDHBM -1 – +1 kV
ESD capability ANT port (according
IEC 61000-4-2 contact)
VESDANT -8 – +8 kV On application board with
27nH shunt inductor
Junction temperature Tj– – 125 ◦C –
1) Switch has no highpass response. There is also a high ohmic DC to the RF path. The DC voltage at RF ports VRFDC has to be 0V.
Data Sheet 7 Revision 1.3 - 2016-08-24
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Table 3: Maximum Ratings, Table II at TA= 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum DC-voltage on RF-Ports
and RF-Ground
VRFDC 0 – 0 V No DC voltages allowed on
RF-Ports
Control Voltage Levels VCTRL -0.7 – 3.3 V –
4 Operation Ranges
Table 4: Operation Ranges
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VDD 1.8 2.85 3.6 V –
Supply current1) IDD – 75 120 µA–
Control voltage low VCtrl,low 0 0.45 V –
Control voltage high VCtrl,high 1.2 1.8 2.85 V VCtrl,high VDD
Control current low ICtrl,low -1 0 1 µA–
Control current high ICtrl,high -1 0 1 µA VCtrl,high VDD
Ambient temperature TA-40 25 85 ◦C –
RF switching time 2) tsw 1 2 5 µs–
Startup time 2) tsw 10 30 µs–
1)TA= -30 ◦C−+85 ◦C, VBATT = 1.8 −3.6 V
2), Represents actual alpha status. To be updated.
5 Logic Table
Table 5: Logic Table
CTRL 1 CTRL 2 Mode
0 0 RF1 connected to ANT
0 1 RF2 connected to ANT
1 0 RF3 connected to ANT
1 1 RF4 connected to ANT
Data Sheet 8 Revision 1.3 - 2016-08-24
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6 RF Characteristics for RF1 and RF3
Table 6: RF Specifications
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Insertion Loss
698 - 960 MHz
IL
– 0.18 0.26 dB
VDD = 1.8 −3.6 V,
TA= -30 ... +85 ◦C,
Z0= 50 Ω,
PIN up to 38 dBm
1710 - 1980 MHz – 0.29 0.36 dB
1981 - 2170 MHz – 0.30 0.41 dB
2171 - 2690 MHz – 0.51 0.68 dB
3400 - 3800 MHz – 1.20 1.40 dB
5150 - 5850 MHz – 1.90 2.35 dB
Return Loss
All Ports @ 698 - 915 MHz RL 23 30 – dB
All Ports @ 1710 - 1980 MHz 16 19 – dB
All Ports @ 1981 - 2170 MHz 14 17 – dB
All Ports @ 2171 - 2690 MHz 11 12 – dB
All Ports @ 3400 - 3800 MHz 7 8 – dB
All Ports @ 5150 - 5850 MHz 6 7 – dB
Isolation RFC
698 - 915 MHz
ISO
34 41 – dB
1710 - 1980 MHz 27 32 – dB
1981 - 2170 MHz 26 30 – dB
2171 - 2690 MHz 24 28 – dB
3400 - 3800 MHz 20 24 – dB
5150 - 5850 MHz 15 18 – dB
Isolation RF1,2,3,4 - RF4,3,2,1
698 - 915 MHz
ISO
43 50 – dB
1710 - 1980 MHz 34 38 – dB
1981 - 2170 MHz 33 36 – dB
2170 - 2690 MHz 30 33 – dB
3400 - 3800 MHz 24 28 – dB
5150 - 5850 MHz 18 21 – dB
Data Sheet 9 Revision 1.3 - 2016-08-24
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7 RF Characteristics for RF2 and RF4
Table 7: RF Specifications
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Insertion Loss
698 - 960 MHz
IL
– 0.30 0.40 dB
VDD = 1.8 −3.6 V,
TA= -30 ... +85 ◦C,
Z0= 50 Ω,
PIN up to 38 dBm
1710 - 1980 MHz – 0.40 0.50 dB
1981 - 2170 MHz – 0.41 0.54 dB
2171 - 2690 MHz – 0.64 0.80 dB
3400 - 3800 MHz – 1.19 1.45 dB
5150 - 5850 MHz – 1.78 2.09 dB
Return Loss
All Ports @ 698 - 915 MHz RL 23 27 – dB
All Ports @ 1710 - 1980 MHz 17 20 – dB
All Ports @ 1981 - 2170 MHz 14 18 – dB
All Ports @ 2171 - 2690 MHz 11 15 – dB
All Ports @ 3400 - 3800 MHz 7 9 – dB
All Ports @ 5150 - 5850 MHz 6 8 – dB
Isolation RFC
698 - 915 MHz
ISO
34 41 – dB
1710 - 1980 MHz 27 32 – dB
1981 - 2170 MHz 26 30 – dB
2171 - 2690 MHz 24 28 – dB
3400 - 3800 MHz 20 24 – dB
5150 - 5850 MHz 14 18 – dB
Isolation RF1,2,3 - RF3,2,1
698 - 915 MHz
ISO
43 50 – dB
1710 - 1980 MHz 34 38 – dB
1981 - 2170 MHz 33 36 – dB
2170 - 2690 MHz 30 33 – dB
3400 - 3800 MHz 24 28 – dB
5150 - 5850 MHz 18 21 – dB
Data Sheet 10 Revision 1.3 - 2016-08-24
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8 RF large signal parameter
Table 8: RF large signal specifications for RF1 and RF3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Max. RF input power – – – 38 dBm for typical Hxbehavior
Harmonic Generation up to 12.75 GHz(1,2,3)
Second Order Harmonics PH2– -100 – dBc 25 dBm, 50Ω, CW mode
Third Order Harmonics PH3– -115 – dBc 25 dBm, 50Ω, CW mode
All RF Ports PHx – -100 – dBc 25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low IIP2,l – 110 – dBm IIP2 conditions table 8
IIP2, high IIP2,h – 125 – dBm
Intermodulation Distortion IMD3 (1,2,3)
IIP3 IIP3 – 72 – dBm IIP3 conditions table 9
SV LTE Intermodulation (1,2,3)
IIP3,SVLTE IIP3,SV – 73 – dBm SV-LTE conditions table 10
1)Terminating Port Impedance: Z0= 50 Ω2)Supply Voltage: VDD = 1.8 −3.6 V3)On application board without any matching
components
Table 9: RF large signal specifications for RF2 and RF4
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Max. RF input power – – – 38 dBm for typical Hxbehavior
Harmonic Generation up to 12.75 GHz(1,2,3)
Second Order Harmonics PH2– -105 – dBc 25 dBm, 50Ω, CW mode
Third Order Harmonics PH3– -105 – dBc 25 dBm, 50Ω, CW mode
All RF Ports PHx – -105 – dBc 25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low IIP2,l – 110 – dBm IIP2 conditions table 8
IIP2, high IIP2,h – 130 – dBm
Intermodulation Distortion IMD3 (1,2,3)
IIP3 IIP3 – 74 – dBm IIP3 conditions table 9
SV LTE Intermodulation (1,2,3)
IIP3,SVLTE IIP3,SV – 74 – dBm SV-LTE conditions table 10
1)Terminating Port Impedance: Z0= 50 Ω2)Supply Voltage: VDD = 1.8 −3.6 V3)On application board without any matching
components
Data Sheet 11 Revision 1.3 - 2016-08-24
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Table 10: IIP2 conditions table
Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2
[MHz] [MHz] [dBm] [MHz] [dBm]
Band 1 Low 2140 1950 20 190 -15
Band 1 High 2140 1950 20 4090 -15
Band 5 Low 881.5 836.5 20 45 -15
Band 5 High 881.5 836.5 20 1718 -15
Table 11: IIP3 conditions table
Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2
[MHz] [MHz] [dBm] [MHz] [dBm]
Band 1 2140 1950 20 1760 -15
Band 5 881.5 836.5 20 791.5 -15
Table 12: SV-LTE conditions table
Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2
[MHz] [MHz] [dBm] [MHz] [dBm]
Band 5 872 827 23 872 14
Band 13 747 786 23 747 14
Band 20 878 833 23 2544 14
Data Sheet 12 Revision 1.3 - 2016-08-24
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9 Package Outline and Pin Configuration
ANT
10
RF1
RF2
GND GND
VDD CTRL 2
CTRL 1
RF3
RF4
1
2
3
4
9
8
7
6
5
Figure 2: Pinout (top view)
Table 13: Pin Description
Pin No. Name Pin
Type
Buffer
Type
Function
1 RF1 I/O RF1
2 GND GND Ground
3 RF2 I/O RF2
4 VDD PWR Supply voltage
5 CTRL 1 I Control Pin 1
6 CTRL 2 I Control Pin 2
7 RF4 I/O RF4
8 GND GND Ground
9 RF3 I/O RF3
10 ANT I/O Common RF / Antenna
Table 14: Mechanical Data
Parameter Symbol Value Unit
X-Dimension X1.1 ±0.05 mm
Y-Dimension Y1.5 ±0.05 mm
Size Size 1.65 mm2
Height H0.375 mm
Data Sheet 13 Revision 1.3 - 2016-08-24
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TSNP-10-1-PO V01
Pin 1 marking
Bottom view
Top view
1.1 ±0.05
0.2 ±0.05
0.2 ±0.05
1
2
3
4
5
10
9
8
7
6
0.02 MAX.
0.375
10x
0.1 B
0.1
10x
A
0.4
0.4
3 x 0.4 = 1.2
0.8
A
1.5
±0.05
B
Figure 3: Package Dimensions Drawing
TSNP-10-1-FP V01
Stencil apertures
Copper Solder mask
0.475
0.4
10x 0.25
10x 0.25
0.4
0.4
10x 0.25
0.2
0.4
0.4
0.4
0.475
Optional solder mask dam
Figure 4: Land pattern and stencil mask
Data Sheet 14 Revision 1.3 - 2016-08-24
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TSNP-10-1MK V02
Pin 1 marking
4P
Type code
Date code (YW)
Figure 5: Marking
40.5
Pin 1
marking
1.3
1.7
8
TSNP-10-1-TP V01
Figure 6: Tape drawing
Data Sheet 15 Revision 1.3 - 2016-08-24
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