MRF5S9080NR1 MRF5S9080NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
•Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts
CW, Full Frequency Band (869 -894 MHz or 921-960 MHz).
Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA,
Pout = 36 Watts Avg., Full Frequency Band (869-894 MHz or
921- 960 MHz).
Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.5% rms
•Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
•Characterized with Series Equivalent Large- Signal Impedance Parameters
•Internally Matched for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation
•Integrated ESD Protection
•200_C Capable Plastic Package
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.50
0.54
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S9080N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5S9080NR1
MRF5S9080NBR1
869- 960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1484- 04, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9080NBR1
CASE 1486- 03, STYLE 1
TO-270 WB- 4
PLASTIC
MRF5S9080NR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 1B (Minimum)
Machine Model (per EIA/JESD22- A115) A (Minimum)
Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J-STD -020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
VGS(th) 2 2.8 3.5 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q) 3.5 3.9 4.5 Vdc
Drain-Source On -Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on) — 0.27 0.3 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.8 — pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 600 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW, f = 960 MHz
Power Gain Gps 17 18.5 20 dB
Drain Efficiency ηD55 60 — %
Input Return Loss IRL — -15 -9 dB
Pout @ 1 dB Compression Point P1dB 80 90 — W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 550 mA, Pout = 36 W Avg.,
869-894 MHz, 920 -960 MHz GSM EDGE Modulation
Power Gain Gps — 19 — dB
Drain Efficiency ηD— 42 — %
Error Vector Magnitude EVM — 2.5 — % rms
Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -77 — dBc
1. Part is internally matched on input.
MRF5S9080NR1 MRF5S9080NBR1
3
RF Device Data
Freescale Semiconductor
Z1 1.220″ x 0.087″ Microstrip
Z2 1.110″ x 0.087″ Microstrip
Z3 0.536″ x 0.087″Microstrip
Z4 0.310″ x 0.087″Microstrip
Z5 0.430″ x 0.591″Microstrip
Z6 1.567″ x 0.059″ Microstrip
Z7 0.734″ x 0.788″ Microstrip
Z8 0.138″ x 0.087″ Microstrip
Z9 0.411″ x 0.087″ Microstrip
Z10 0.403″ x 0.087″ Microstrip
Z11 0.560″ x 0.087″ Microstrip
Z12, Z13 1.693″ x 0.087″ Microstrip
PCB Taconic TLX8- 0300, 0.030″, εr = 2.55
Figure 1. MRF5S9080NR1(NBR1) Test Circuit Schematic — 900 MHz
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
C10
C1
R1
R2 C4 C7
R3
DUT
C12 C13 C14
Z1 Z2 Z3 Z4
Z6
Z5
C19 C20C17C15
Z7
C18C16
Z12 C8 C5 C2 C21
+
Z8 Z9 Z11
C11
Z10
C9 C6 C3
Z13
Table 6. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 900 MHz
Part Description Part Number Manufacturer
C1, C2, C3 4.7 µF Chip Capacitors (1812) C4532X5R1H475MT TDK
C4, C5, C6 10 nF 200B Chip Capacitors 200B103MW ATC
C7, C8, C9 33 pF 600B Chip Capacitors 600B330JW ATC
C10, C11 22 pF 600B Chip Capacitors 600B220FW ATC
C12 1.8 pF 600B Chip Capacitor 600B1R8BW ATC
C13 9.1 pF 600B Chip Capacitor 600B9R1BW ATC
C14, C17, C18 8.2 pF 600B Chip Capacitors 600B8R2BW ATC
C15, C16 10 pF 600B Chip Capacitors 600B100FW ATC
C19 4.7 pF 600B Chip Capacitor 600B4R7BW ATC
C20 3.6 pF 600B Chip Capacitor 600B3R6BW ATC
C21 220 µF, 63 V Electrolytic Capacitor, Axial 13668221 Philips
R1, R2 10 kΩ, 1/4 W Chip Resistors (1206)
R3 10 Ω, 1/4 W Chip Resistor (1206)
4
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
Figure 2. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 900 MHz
CUT OUT AREA
C4
C13
VGG
VDD
C7
C1 R1 R2
R3
C14
C10
C12
C9
C15
C6
C17 C20
C11C19
C16 C18
C21
C2
C8 C5
MRF5S9080N/NB
Rev. 1
C3
MRF5S9080NR1 MRF5S9080NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
1020
16.5
19.5
860
−40
80
6019
40
18 20
0
17 −20
880 900 920 940 960 980 1000
INPUT RETURN LOSS (dB)IRL,
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 80 Watts CW
IRL
Gps
VDD = 26 Vdc
IDQ = 600 mA
ηD, DRAIN EFFICIENCY (%)
ηD
18.5
17.5
Gps, POWER GAIN (dB)
1020
18.2
19.2
860
−40
60
40
19
18.6
20
0
−20
880 900 920 940 960 980 1000
INPUT RETURN LOSS (dB)IRL,
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 36 Watts CW
IRL
Gps
VDD = 26 Vdc
IDQ = 600 mA
ηD, DRAIN EFFICIENCY (%)
ηD
18.8
18.4
1000
14
20
1
IDQ = 900 mA
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
VDD = 26 Vdc
f = 940 MHz
600 mA
18
17
16
15
10 100 200
13
20
0
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
VDD = 12 V
16 V 24 V 28 V
32 V
18
17
16
15
50 100 150
20 V
19 750 mA
450 mA
300 mA
IDQ = 600 mA
f = 940 MHz
19
14
6
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
TYPICAL CHARACTERISTICS - 900 MHz
Gps, POWER GAIN (dB)
10001
0
70
Gps
TC = −30_C
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
25_C
85_C
25_C
85_C
10010
60
50
40
30
20
10
14
21
20
19
18
17
16
15
980
0
6
900
Pout = 53 W Avg.
f, FREQUENCY (MHz)
Figure 8. EVM versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
VDD = 28 Vdc
IDQ = 550 mA
13 W Avg.
3 W Avg.
5
4
3
2
1
910 920 930 940 950 960 970
ηD
100
0
1
0
EVM
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. EVM and Drain Efficiency versus
Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC = 85_C
25_C
−30_C
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
880
660
440
20
2
10 980
−90
−50
900
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL REGROWTH @ 400 kHz and 600 kHz (dBc)
VDD = 28 Vdc
IDQ = 550 mA
f = 940 MHz
EDGE Modulation
−60
−70
−80
910 920 930 940 950 960 970
Pout = 53 W Avg.
13 W Avg.
3 W Avg.
ηD, DRAIN EFFICIENCY (%)
ηD, DRAIN EFFICIENCY (%)
ηD
−30_C
100
−80
−45
0
TC = 85_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth @ 400 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
25_C
−30_C
−55
−65
−75
20 40 80 100
−85
−55
0
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth @ 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
−65
−75
−80
20 40 60 80
−50
−60
−70
60
−70
−60
TC = 85_C
25_C
−30_C
−55
−65
−75
−85
SR @ 600 kHz 53 W Avg.
13 W Avg.
3 W Avg.
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
MRF5S9080NR1 MRF5S9080NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
210
1.E+07
1.E+09
90
MTTF FACTOR (HOURS X AMPS2)
1.E+08
100 110 120 130 140 150 160 170 180 190 200
GSM TEST SIGNAL
Figure 14. EDGE Spectrum
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
200 kHz Span 2 MHzCenter 1.96 GHz
−110
400 kHz
600 kHz
400 kHz
600 kHz
(dB)
Reference Power VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
8
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
Figure 15. Series Equivalent Source and Load Impedance — 900 MHz
f
MHz
Zsource
Ω
Zload
Ω
845
865
5.31 - j5.59
5.05 - j1.99
6.07 - j4.16
1.18 - j0.34
1.09 - j0.29
1.22 - j0.29
VDD = 26 Vdc, IDQ = 600 mA, Pout = 80 W CW
Zo = 10 Ω
f = 990 MHz
f = 990 MHz f = 845 MHz
f = 845 MHz
890
920 3.47 - j0.81 1.10 - j0.21
Zload
Zsource
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
2.64 - j0.88 1.05 - j0.15960
990 1.89 - j1.14 0.91 - j0.18
MRF5S9080NR1 MRF5S9080NBR1
9
RF Device Data
Freescale Semiconductor
Figure 16. MRF5S9080NR1(NBR1) Test Circuit Schematic — 800 MHz
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
C10
C1
R1
R2 C4 C7
R3
DUT
C12 C13 C14
Z1 Z2 Z3 Z4
Z6
Z5
C19 C20C17C15
Z7
C18C16
Z12 C8 C5 C2 C21
+
Z8 Z9 Z11
C11
Z10
C9 C6 C3 C22
+
Z13
Z1 1.220″ x 0.087″ Microstrip
Z2 1.110″ x 0.087″ Microstrip
Z3 0.536″ x 0.087″Microstrip
Z4 0.310″ x 0.087″Microstrip
Z5 0.430″ x 0.591″Microstrip
Z6 1.567″ x 0.059″ Microstrip
Z7 0.734″ x 0.788″ Microstrip
Z8 0.138″ x 0.087″ Microstrip
Z9 0.411″ x 0.087″ Microstrip
Z10 0.403″ x 0.087″ Microstrip
Z11 0.560″ x 0.087″ Microstrip
Z12, Z13 1.693″ x 0.087″ Microstrip
PCB Taconic TLX8- 0300, 0.030″, εr = 2.55
Table 7. MRF5S9080NR1(NBR1) Test Circuit Component Designations and Values — 800 MHz
Part Description Part Number Manufacturer
C1, C2, C3 4.7 µF Chip Capacitors (1812) C4532X5R1H475MT TDK
C4, C5, C6 10 nF 200B Chip Capacitors 200B103MW ATC
C7, C8, C9 33 pF 600B Chip Capacitors 600B330JW ATC
C10, C11 22 pF 600B Chip Capacitors 600B220FW ATC
C12 1.8 pF 600B Chip Capacitor 600B1R8BW ATC
C13 9.1 pF 600B Chip Capacitor 600B9R1BW ATC
C14, C17, C18 8.2 pF 600B Chip Capacitors 600B8R2BW ATC
C15, C16 10 pF 600B Chip Capacitors 600B100FW ATC
C19 4.7 pF 600B Chip Capacitor 600B4R7BW ATC
C20 3.6 pF 600B Chip Capacitor 600B3R6BW ATC
C21, C22 220 µF, 50 V Electrolytic Capacitors, Radial 678D227M050DM3D Vishay
R1, R2 10 kΩ, 1/4 W Chip Resistors (1206)
R3 10 Ω, 1/4 W Chip Resistor (1206)
10
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
Figure 17. MRF5S9080NR1(NBR1) Test Circuit Component Layout — 800 MHz
CUT OUT AREA
VGG
VDD
C13
MRF5S9080N/NB
Rev. 1
C1 R2
R1
C4 C7
R3
C10
C12 C14
C9 C6
C3
C22
C11
C20
C19
C15 C17
C18
C16
C8 C5
C2
C21
MRF5S9080NR1 MRF5S9080NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 800 MHz
Gps, POWER GAIN (dB)
940
14
20
820
−40
80
40
19
17 20
0
16
−20
840 860 880 900 920
INPUT RETURN LOSS (dB)IRL,
f, FREQUENCY (MHz)
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 80 Watts
IRL
Gps
VDD = 26 Vdc
IDQ = 600 mA
ηD, DRAIN EFFICIENCY (%)
ηD
18
Gps, POWER GAIN (dB)
940
12
22
820
−40
60
40
20
16
20
0
14 −20
840 860 880 900 920
INPUT RETURN LOSS (dB)IRL,
f, FREQUENCY (MHz)
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 36 Watts
IRL
Gps
VDD = 26 Vdc
IDQ = 600 mA
ηD, DRAIN EFFICIENCY (%)
ηD
18
910
0
5
850
Pout = 50 W Avg.
f, FREQUENCY (MHz)
Figure 20. EVM versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
VDD = 28 Vdc
IDQ = 550 mA
20 W Avg.
5 W Avg.
4
3
2
1
860 870 880 890 900
ηD
100
0
1
0
EVM
Pout, OUTPUT POWER (WATTS) AVG.
Figure 21. EVM and Drain Efficiency versus
Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC = 25_C
770
660
440
20
2
10
ηD, DRAIN EFFICIENCY (%)
5
3
1
50
30
10
VDD = 28 Vdc
IDQ = 550 mA
f = 880 MHz
EDGE Modulation
15
60
12
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
TYPICAL CHARACTERISTICS - 800 MHz
920
−85
−50
840
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL REGROWTH @ 400 kHz and 600 kHz (dB
VDD = 28 Vdc
IDQ = 550 mA
f = 880 MHz
EDGE Modulation
−60
−70
−80
850 860 870 880 890 900 910
Pout = 50 W Avg.
20 W Avg. 5 W Avg.
−55
−65
−75 SR @ 600 kHz
50 W Avg. 20 W Avg.
5 W Avg.
100
−75
−45
1
TC = 25_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 23. Spectral Regrowth @ 400 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
−55
−65
−50
−60
−70
10
VDD = 28 Vdc
IDQ = 550 mA
f = 880 MHz
EDGE Modulation
100
−85
−65
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 24. Spectral Regrowth @ 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
−75
−80
10
−70
TC = 25_C
VDD = 28 Vdc
IDQ = 550 mA
f = 880 MHz
EDGE Modulation
MRF5S9080NR1 MRF5S9080NBR1
13
RF Device Data
Freescale Semiconductor
NOTES
14
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
NOTES
MRF5S9080NR1 MRF5S9080NBR1
15
RF Device Data
Freescale Semiconductor
NOTES
16
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
PACKAGE DIMENSIONS
CASE 1486-03
ISSUE C
TO- 270 WB-4
PLASTIC
MRF5S9080NR1
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
H
DRAIN LEAD
D
A
M
aaa C
4X
b1
2X
D2 NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M− 1994.
3. DATUM PLANE − H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H− .
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS − A− AND −B− TO BE DETERMINED AT
DATUM PLANE − H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D.712 .720 18.08 18.29
D1 .688 .692 17.48 17.58
D2 .011 .019 0.28 0.48
D3 .600 − − − 15.24 − − −
E.551 .559 14 14.2
E1 .353 .357 8.97 9.07
E2 .132 .140 3.35 3.56
E3 .124 .132 3.15 3.35
E4 .270 − − − 6.86 − − −
F
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa .004 0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
23
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇ
NOTE 7
E5
E5
E5 .346 .350 8.79 8.89
MRF5S9080NR1 MRF5S9080NBR1
17
RF Device Data
Freescale Semiconductor
18
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
MRF5S9080NR1 MRF5S9080NBR1
19
RF Device Data
Freescale Semiconductor
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RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
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Document Number: MRF5S9080N
Rev. 1, 5/2006
