2SB633 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
! Compleme n t to 2SD 6 13
ABSOLUTE MAXIMUM RATINGS (TA=25℃
℃℃
℃)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipati on (Tc=25℃)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
-100
-85
-5
-6
40
150
-50~150
V
V
V
A
W
℃
℃℃
℃
℃
℃℃
℃
ELECTRICAL CHARACTERISTICS (TA=25℃
℃℃
℃)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
I
CBO
IEBO
hFE1
VCE(sat)
fT
V
CB= -100V , IE=0
V
EB=- 5V , IC=0
V
CE= -5V , IC=-1A
I
C=-4A , IB=-0.4A
V
CE= -2V , IC=-0.5A
40
8
-10
10
320
-2.0
µA
µA
V
M
HZ
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
