OPERATING POWER SUPPLY VOLTAGE
RANGE 4.8V
VS36V (40V FOR TRAN-
SIENTS)
REVERSE SUPPLY (BATTERY) PRO-
TECTED DOWNTO VS-24V
STANDBYMODE WITHVERY LOWCURRENT
CONSUMPTIONISSB 1µA@V
CC 0.5V
MIN POSSIBLE BAUD RATE ACCORDING
TO ISO9141 130KBAUD
TTL COMPATIBLETX INPUT
BIDIRECTIONAL K-I/O PIN WITH SUPPLY
VOLTAGEDEPENDENTINPUTTHRESHOLD
OVERTEMPERATURE SHUT DOWN FUNC-
TION SELECTIVE TO K-I/O PIN
WIDE INPUT AND OUTPUT VOLTAGE
RANGE -24VVK VS
KOUTPUTCURRENT LIMITATION,TYPIK=60mA
DEFINED OFF OUTPUT STATUS IN UNDER-
VOLTAGE CONDITION AND VS OR GND IN-
TERRUPTION
CONTROLLEDOUTPUTSLOPEFORLOWEMI
HIGH INPUT IMPEDANCE FOR OPEN VS
OR GNDCONNECTION
DEFINED OUTPUT ON STATUS OF LO OR
RX FOROPEN LI ORK INPUTS
DEFINED K OUTPUT OFF FOR TX INPUT
OPEN
INTEGRATED PULL UP RESISTORS FOR
TX, RX AND LO
EMI ROBUSTNESS OPTIMIZED
DESCRIPTION
The L9613Bis a monolithicintegratedcircuit con-
tainingmediumspeed data interfacefunctions.
November 1999
TX
RX
LO
GND
LI
VS VCC
K
1,75V
RTX RLO RRX
ILI
IK OFF
IKSC
TjMON
-
+
-
+
-
+
BLOCK DIAGRAM
SO8
ORDERING NUMBERS: L9613B013TR (TAPE&REEL)
L9613B (TUBES)
L9613B
DATA INTERFACE
1/10
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VSSupply Voltage
ISO transientt 400ms -24 to +36
-24 to +40 V
V
VCC Stabilized Voltage -24V to 7 V
dVS/dt Supply VoltageTransient -10 to +10 V/µs
VLI,K Pin voltage -24 to VSV
VLO, RX, TX Pin voltage -24 to VCC V
* max ESDvoltages are +/-2KV with human body model C=100pF, R=1.5Kcorresponds to maximum energy
THERMAL DATA
Symbol Parameter Min. Typ. Max. Unit
TJSDon Temperature shutdown switch-on-threshold 160 200 °C
TJSDoff Temperature shutdown switch-off-threshold 150 °C
Rth(j-a) Thermal steadystate junction to ambient resistance 130 155 180 °C/W
PIN FUNCTIONS
N. Name Description
1 RX Output for K as input
2 LO Output L comparator
3 VCC Stabilized voltage supply
4 TX Input for K as output
5 GND Common GND
6 K Bidirectional I/O
7 VS Supply voltage
8 LI Input L comparator
K
GND
LI
VS
5
6
7
8
TX
LO
VCC
RX 1
2
3
4
PIN CONNECTION
L9613B
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ELECTRICAL CHARACTERISTICS (The electrical characteristics are valid within the below defined
Operating Conditions, unless otherwisespecified).
The function is guaranteed by design until TJSDon temperatureshutdownswitch-on-threshold.
VSSupplyvoltage 4.8 V... 18 V
VCC Stabilizedvoltage 3 V... 7 V
TJJunctiontemperature -40 °C...150°C
Symbol Parameter Test Condition Min. Typ. Max. Unit
ICC Supply VCC Current VCC 5.5V
VLI, VTX = 0V 1.4 2.5 mA
VK VKhigh
VLI VLIhigh
VTX = VCC
@V
CC 5.5V
-5 40 150 µA
ISON Supply VS Current VLI, VTX = 0V 3.5 10 mA
VCC = 0.5V
@V
S12V 3) <1 50 µA
ISSB VCC = 0.5V, see fig. 5
@V
S16V 100 µA
VKlow Input Voltage LOW State RX output status LOW -24 0.40VS V
VKhigh Input Voltage HIGH State RX output status HIGH 0.60VS VS V
VKhys Input Threshold Hysteresis VKhigh -VK
low
VS8.0V
VS6.0V 0.2
0.08 0.05VS 1.0 V
V
IKOFF Input Current VTX VTXhigh
VS,V
CC 0V or VS,
VCC = open or GND = open
-5 4 40 µA
RKON Output ON Impedance @ VS6.5V
VTX VTXlow IK 7mA 1) 10 30
IKSC Short Circuit Current VS6.5V 40 60 150 mA
VKsat Output Saturation Voltage RKO = 1.5K1V
VTXlow Input Voltage
LOW State -24 1 V
VTXhigh Input Voltage
HIGH State 3.5 VCC V
RRXON
RLOON Output ON Impedance VK VKlow; VLI VLIlow
VS6.5V; IRX,LO 1mA 40 90
VRXsat
VLOsat Saturation Output Voltage No external load 1 V
IRXSC
ILOSC Output short circuit current VS6.5V 92050mA
RTX Input pull up resistance Output status = (HIGH)
TA85°C
-0.15V VLO VCC + 0.15V
-0.15V VRX VCC + 0.15V
51018k
RTX Input pull up resistance -0.15V VTX VCC + 0.15V
Tamb 125°C10 20 40 k
VLIlow Input voltage LOW state LO output status LOW -24 0.40VS V
VLIhigh Input voltage HIGH state LO output status HIGH 0.60VS VS V
ILI Input current VS, VCC 0V or
VS, VCC = open or
GND = open
-5 4 40 µA
Note 1) For external supplied output currents lower than this value a series protection diode can become active. See also Fig. 4 and 5.
L9613B
3/10
ELECTRICALCHARACTERISTICS (continued)
Symbol Parameter Test Condition Min. Typ. Max. Unit
CKI,LO,RX Internal output capacities 20 pF
fLI-LO
fK-RX
fTX-K
Transmission frequency 9V < VS< 16V,
(external loads)
Tmin 20 RKO CK-Kline
130 kHz
fLI-LO
fK-RX
fTX-K
Rise Time for the definition of tr, tf see
FIG. 1, 2) 0.4 2 µs
Fall Time 9V < VS< 16V,
(external loads)
Tmin 20 RKO CK-Kline
0.4 2 µs
tOFF,LI-LO
tOFF,K-RX
tOFF,TX-K
Switch OFF time for the definition of tr, tf see
FIG. 1 1.3 3 µs
tON,LI-LO
tON,K-RX
tON,TX-K
Switch ON time 9V < VS< 16V,
(external loads)
Tmin 20 RKO CK-K
line
1.3 3 µs
tdSB ON
tdSB OFF
Standby reaction time VTX = 0V, IK 7mA
VLI = 0V, 9V < VS < 16V
see FIG. 2
10
20
20
40
µs
µs
Note 2) Speed limitation related to external capacitance CextRX, LO andinternal impedance CLO,RX, RLO,RRX for rise time.
tr=R
LO,RX (CLO,RX +C
extRX,LO)1.38.
Note 3) In case of spikes on VCC 0.5V KOUT will be switched On for typical 10µs which represents the standby tdSB reaction time.
FUNCTIONAL DESCRIPTION
The L9613B is a monolithic bus driver designedto provide bidirectional serial communication in automo-
tiveapplications.
The device provides a bidirectional link, called K, to the VBat related diagnosis bus. It also includes a
separate comparator L which is also able to be linked to the VBat bus. The input TX and output RX of K
are related to VCC with her integrated pull up resistances. Also the L comparatoroutput LO has a pull
up resistanceconnectedto VCC.
All VBat bus defined inputs LI and K have supply voltage dependent thresholds together with sufficent
hysteresis to suppress line spikes. These pins are protected against overvoltages, shorts to GND and
VS and can also be driven beyond VS and GND. These features are also given for TX, RX and LI only
taking into account the behaviour of the internal pull up resistances. The thermal shut down function
switches OFFthe K output if the chip temperatureincreases above the thermalshut down threshold. To
reactivate K again the chip temperature must decrease below the K switch ON temp. To achieveno fault
for VS undervoltage conditions the outputs will be switched OFF and stay at high impedance. The de-
vice is also protected against reverse battery condition. During lack of VS or GND all pins shows high
impedance characteristic. To realize a lack of the VS related bus line LI and K the outputs LO and RX
shows defined ON status. Supressing all 4 classes of ”Schaffner” signals (Schaffner 1; 2; 3a,b; 4) all
pins can be load with short energy pulses of max. ±0.2mJ. All these featurestogether with a high possi-
ble baud rate >130Kbaud, controlled output slopes for low EMI, a wide power supply voltage range and
a real standby function with zero power consumption ISSB typ 1µA during system depowering VCC
0.5V makethis devicehigh efficientfor automotivebus system.
After wake up of the system from SB condition the first output signal will have an additional delay time
tdtyp 5µs.
The typical output voltage behaviour for the K, LO, RX outputs as a function of the output current is
shown in Fig.5. Fig.6 showsa waveformof theoutput signal when the low level changes from RON IOUT
to IOUT 2RON +U
BE state. This variation occurs due to too low output current or after a negativetran-
sient forcedto the outputor to the supplyvoltage line.
L9613B
4/10
t
V
tf
t
IN
V
20%
tr
80% 80%
20%
OUT
tON
tOFF
Figure 1. Input to output timings and output pulse shape
VLO
VK
VCC
80%
20%
0V
5V
80%
VCC
ON
tdSB
ON
tdSB
OFF
tdSB
Figure 2. Standby reaction time.
L9613B
5/10
IMIN
OUT
DSON
R
VOUT
1
protection diode
IOUT
IOUT DSON
R
*
VOUT =
+U
BE
IOUT DSON
R
2
**
V
OUT =
Figure 3. Output characteristicsat K, LO, RX.
t
t
2
* * DSON
R+U
BE
IOUT
*DSON
RIOUT
>IMIN
OUT
IOUT <IOUT IMIN
OUT
>IMIN
OUT
IOUT
IN
V
OUT
V
Figure 4. Output signal shape related to output current.
L9613B
6/10
ISSB
100µA
50µA
12V 16V
R50k
VS
Figure 5. Standby currentconsumption.
40V
RKO
uP
I/O
I/O
I/O
5V
VCC
VDD
ECU1
KLine
LLine
ECU2
K
L
LI
K
VS
TX
RX
LO
GND
LI
VS VCC
K
510
Diagnostic
Tester
CK
0.4
CK
1,75V
RTX RLO RRX
ILI
IKOF F
IKSC
TjMON
-
+
-
+
-
+
Figure 6. ApplicationCircuit.
L9613B
7/10
VS = 12V
50
10kHz
510
136
68
1.5nF
=
40dB
Pimax =5W
Rhode &Schwartz
SMG
0.1 - 1000MHz
NAP
Probe
NAP - 73
RX
VS
K
U713
VS
TX K
U713
± 10%
Signalcomparison
Pi
EMS Performance (ISO 9141 BUS system)
Figure 7.
10000
5000
1000
100
1 10 100 1000
not incidentpower resistant
incident power resistant
Pi(mW)
f(MHz)
Figure 8.
ESD applicationhints
To improve the ESD robustness of this device
above specified ±2KV/HBM external blocking ca-
pacitors must be used. Neverthelessthe max. en-
ergy which can be clamped by this device should
not exceeds0.2mJ for each pin. An equivalent in-
put diagramforcalculationcan be seen in fig. 9.
ESD duschargemodel
EESD =1
2CHBM UESD
2=0.2mJ+1
2CEXT (45V)2
100pF
1.5k45V
45V
E0.2mJ
HBM
C
RHBM
Cext
Figure 9.
L9613B
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65
0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45°(typ.)
D (1) 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F (1) 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max.)
(1) D andF do not includemoldflash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
SO8
OUTLINE AND
MECHANICAL DATA
L9613B
9/10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in lifesupport devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics Printedin Italy All Rights Reserved
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L9613B
10/10