2SA1244
2002-07-23
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
· Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A)
· High speed switching time: tstg = 1.0 µs (typ.)
· Complementary to 2SC3074
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −5 A
Base current IB −1 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
20
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
2SA1244
2002-07-23
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −50 V, IE = 0 ― ― −1 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ― ― −1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V
hFE (1)
(Note) VCE = −1 V, IC = −1 A 70 ― 240
DC current gain
hFE (2) V
CE = −1 V, IC = −3 A 30 ― ―
Collector-emitter saturation voltage VCE (sat) I
C = −3 A, IB = −0.15 A ― −0.2 −0.4 V
Base-emitter saturation voltage VBE (sat) I
C = −3 A, IB = −0.15 A ― −0.9 −1.2 V
Transition frequency fT V
CE = −4 V, IC = −1 A ― 60 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― 170 ― pF
Turn-on time ton ― 0.1 ―
Storage time tstg ― 1.0 ―
Switching time
Fall time tf
−IB1 = IB2 = 0.15 A,
DUTY CYCLE ≤ 1%
― 0.1 ―
µs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
20 µs INPUT IB2
IB1
OUTPUT
VCC = −30 V
IB1
10 Ω
IB2
A1244 Product No.
Lot No.
hFE Classification
2SA1244
2002-07-23
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector-emitter voltage VCE (V)
VCE – IC
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
VCE – IC
Collector current IC (A)
DC current gain hFE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
0
0
−1.0
−0.2
IB = −60 mA
−0.4
−0.6
−0.8
−1 −2 −3 −4 −5 −6
−30 −100
−350
−7
−400
−300
−10
−200
−150
−500
Common emitter
Tc = 25°C
Common emitter
Tc = 25°C
0
0
−8
−2
IB = −10 mA
−4
−6
−2 −4 −6 −8
−50
−20
−60
−70
−40
−30
−80
Common emitter
Tc = −55°C
0
0
−1.0
−0.2
IB = −60 mA
−0.4
−0.6
−0.8
−1 −2 −3 −4 −5 −6
−200
−80−40
−300
−7
−500
−100
−150 −20
−400
0
0
−1.0
−0.2
IB = −60 mA
−0.4
−0.6
−0.8
−1 −2 −3 −4 −5 −6
−350
−300
−100 −20
−400
−7
−500
−250
−200
−40 −150
Common emitter
Tc = 100°C
20
−0.03
1000
Common emitter
VCE = −1 V
500
300
100
50
−0.1 −0.3 −1 −3 −10
Tc = 100°C
−55
25
−2
−0.03
−0.03
Common emitter
IC/IB = 20
−0.1 −0.3 −1 −3 −10
−1
−0.5
−0.3
−0.1
−0.05
Tc = 100°C
−55
25
2SA1244
2002-07-23
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Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
−0.1
−0.03
Common emitter
IC/IB = 20
25
100
Tc = −55°C
−10
−0.1 −0.3 −1 −3 −10
−0.3
−0.5
−1
−3
−5
−5
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−1
−2
−3
−4
Common emitter
VCE = −1 V
25
−55
Tc = 100°C
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−10
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
DC operation Tc = 25°C
−30 −100−3 −10 −0.3 −1
−1
−0.03
−0.05
−0.1
−0.3
−0.5
−5
−3
28
0
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
20 40 60 80 100 120 160
4
8
12
16
20 (1)
(2)
(3)
24
140
2SA1244
2002-07-23
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000707EA
A
RESTRICTIONS O N PRODUCT USE
