BSP75G 60V N-channel self-protected enhancement mode IntelliFETTM MOSFET Summary Continuous drain source voltage On-state resistance Nominal load current Clamping energy S VDS=60V 550m 1.6A 550mJ D D IN SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch. Features High continuous current rating Note: Drain tab may be electrically isolated provided electrical connection is made to the drain pin, and thermal connection to the drain tab is maintained to ensure thermal performance. Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Over load protection Short circuit protection with auto restart Over voltage protection (active clamp) Load dump protection (actively protects load) Applications Especially suited for loads with a high inrush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications C compatible power switch for 12V and 24V DC applications and for 42V powernet Automotive rated Replaces electromechanical relays and discrete circuits Functional block diagram D Over voltage protection dV/dt limitation IN Human body ESD protection Over current protection Logic Over temperature protection S Issue 2 - April 2005 (c) Zetex Semiconductors plc 2005 1 www.zetex.com BSP75G Absolute maximum ratings Parameter Symbol Limit Unit VDS 60 V VDS(SC) 36 V Continuous input voltage VIN -0.2 ... +10 V Peak input voltage VIN -0.2 ... +20 V Operating temperature range T j, -40 to +150 C Storage temperature range Tstg -55 to +150 C Power dissipation at TA =25 C* PD 2.5 W Continuous drain current @ VIN=10V; TA=25 C* ID 1.6 A Continuous drain current @ VIN=5V; TA=25 C* ID 1.4 A IDM 5 A Continuous source current (body diode)* IS 3 A Pulsed source current (body diode) IS 5 A EAS 550 mJ VLoadDump 80 V VESD 4000 V Continuous drain-source voltage Drain-source voltage for short circuit protection Pulsed drain current @ VIN=10V Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Value Unit Junction to Ambient* RJA 50 C/W Junction to Ambient RJA 34 C/W NOTES: * For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. For a device surface mounted on FR4 board and measured at t<=10s. Issue 2 - April 2005 (c) Zetex Semiconductors plc 2005 2 www.zetex.com BSP75G 1 Max Power Dissipation (W) ID Drain Current (A) Characteristics 2.00 RDS(on) Limited 1.75 1.50 DC 100m Single Pulse Tamb=25C 1.25 1.00 1s 0.75 100ms 10ms 0.50 0.25 Limit of DC Self Protection 10m 1 10 100 VDS Drain-Source Voltage (V) 0.00 0 20 Maximum Power (W) Thermal Resistance (C/W) Tamb=25C 40 D=0.5 30 Single Pulse D=0.2 D=0.05 10 0 100 1m D=0.1 10m 100m 1 10 100 100 10 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance (c) Zetex Semiconductors plc 2005 Single Pulse Tamb=25C 1 100 1m 1k Pulse Width (s) Issue 2 - April 2005 80 100 120 140 160 Derating Curve 50 20 60 Temperature (C) Safe Operating Area 60 40 Pulse Power Dissipation 3 www.zetex.com BSP75G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Symbol Min Typ Max Unit Conditions VDS(AZ) 60 70 75 V ID=10mA Static Characteristics Drain-source clamp voltage Off state drain current IDSS 0.1 3 A VDS=12V, VIN=0V Off state drain current IDSS 3 15 A VDS=32V, VIN=0V V VDS=VGS, ID=1mA Input threshold voltage* VIN(th) 1 2.1 Input current IIN 0.7 1.2 mA VIN=+5V Input current IIN 1.5 2.7 mA VIN=+7V Input current IIN 4 7 mA VIN=+10V Static drain-source on-state resistance RDS(on) 520 675 m VIN=5V, ID=0.7A Static drain-source on-state resistance RDS(on) 385 550 m VIN=10V, ID=0.7A Current limit ID(LIM) 0.7 1.1 1.75 A VIN=5V, VDS>5V Current limit ID(LIM) 2 3 4 A VIN=10V, VDS>5V Dynamic characteristics Turn-on time (VIN to 90% ID) ton 2.2 10 s RL=22, VIN=0 to 10V, VDD=12V Turn-off time (VIN to 90% ID) toff 13 20 s RL=22, VIN=10V to 0V, VDD=12V Slew rate on (70 to 50% VDD) -dVDS/dton 10 20 V/s RL=22, VIN=0 to 10V, VDD=12V Slew rate off (50 to 70% VDD) dVDS/dton 3.2 10 V/s RL=22, VIN=10V to 0V, VDD=12V Issue 2 - April 2005 (c) Zetex Semiconductors plc 2005 4 www.zetex.com BSP75G Electrical characteristics (at Tamb = 25C unless otherwise stated) (Continued) Parameter Symbol Min VPROT 4.5 TJT 150 Typ Max Unit Conditions Protection Functions Required input voltage for over temperature protection Thermal Overload trip temperature Thermal hysteresis V 175 C 10 C Unclamped single pulse inductive energy Tj=25 C EAS 550 mJ ID(ISO)=0.7A, VDD=32V Unclamped single pulse inductive energy Tj=150 C EAS 200 mJ ID(ISO)=0.7A, VDD=32V Inverse Diode Source drain voltage VSD 1 VIN=0V, -ID=1.4A NOTES: * Protection features may operate outside spec for VIN<4.5V. The drain current is limited to a reduced value when Vds exceeds a safe level. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Issue 2 - April 2005 (c) Zetex Semiconductors plc 2005 5 www.zetex.com BSP75G T = 25C 5 VIN 4 10V 9V 8V 7V 6V 5V 4V 3 2 1 0 0 2 VDS 4 6 8 10 12 RDS(on)On-Resistance () ID Drain Current (A) Typical characteristics 1000 800 600 400 0 -50 -25 Drain-Source Voltage (V) 800 600 400 VIN = 5V ID = 0.7A 200 0 25 50 75 100 125 150 Tj Junction Temperature (C) 2.0 75 100 125 150 1.0 VGS(th) VGS = VDS ID = 1mA 0.5 0.0 -50 0 50 100 150 Tj Junction Temperature (C) Typical Input Threshold Voltage 4 2000 T = 25C ID = 0.7A 1500 ID Drain Current (A) RDS(on)On-Resistance () 50 RDS(ON) VIN = 10V ID = 0.7A 1.5 Typical On-state Resistance 1000 500 0 0 25 Typical On-state Resistance Normalised R DS(on) and VGS(th) RDS(on)On-Resistance () 1000 0 Tj Junction Temperature (C) Typical Output Characteristic 0 -50 -25 VIN = 10V ID = 0.7A 200 2 4 6 8 VIN Input Voltage (V) (c) Zetex Semiconductors plc 2005 2 1 0 0 10 2 4 6 8 10 VIN Input Voltage (V) Typical On-state Resistance Issue 2 - April 2005 3 T = 25C VDS=10V Source-Drain Diode Forward Voltage 6 www.zetex.com BSP75G Intentionally left blank Issue 2 - April 2005 (c) Zetex Semiconductors plc 2005 7 www.zetex.com BSP75G Packaging details Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - April 2005 (c) Zetex Semiconductors plc 2005 8 www.zetex.com