Issue 2 - April 2005 1 www.zetex.com
© Zetex Semiconductors plc 2005
Over voltage
protection
Over current
protection
Human
body ESD
protection Logic
IN
D
S
dV/dt
limitation
Over temperature
protection
BSP75G
60V N-channel self-protected enhancement mode
IntelliFETTM MOSFET
Summary
Continuous drain source voltage VDS=60V
On-state resistance 550mΩ
Nominal load current 1.6A
Clamping energy 550mJ
Description
Self-protect ed low si de MOSFET. Monolithic over t emperat ure, over curr ent, o ver vol tage (acti ve
clamp) and ESD protected logic level power MOSFET intende d as a general purpose switch.
Features
■High continuous current rating
■Logic Level Input
■Input protection (ESD)
■Thermal shutdown with auto restart
■Over load protection
■Short circuit protection with auto restart
■Over voltage protection (active clamp)
■Load dump protection (actively prot ects load)
Applications
■Especially suited for loads with a high inrush current such as lamps and motors
■All types of resistive, inductive and capacitive loads in switching applications
■μC compatible power switch for 12V and 24V DC applications and for 42V powernet
■Automotive rated
■Replaces electromechanical relays and discrete circuits
Functional block diagram
Note:
Drain tab may be electrically isolated
provided electrical connection is made to
the drain pin, and thermal connection to
the drain tab is maintained to ensure
thermal performance.
D
S
D
IN
SOT223
BSP75G
Issue 2 - April 2005 2 www.zetex.com
© Zetex Semiconductors plc 2005
Absolute maximum ratings
Thermal resistance
Parameter Symbol Limit Unit
Continuous drain-source voltage VDS 60 V
Drain-source voltage for short circuit protection VDS(SC) 36 V
Continuous input voltage VIN -0.2 ... +10 V
Peak input voltage VIN -0.2 ... +20 V
Operating temperature range Tj, -40 to +150 °C
Storage temperature range Tstg -55 to +150 °C
Power dissipation at TA =25°C*PD2.5 W
Continuous drain current @ VIN=10V; TA=25°C*ID1.6 A
Continuous drain current @ VIN=5V; TA=25°C*ID1.4 A
Pulsed drain current @ VIN=10V IDM 5A
Continuous source current (body diode)*IS3A
Pulsed source current (body diode) IS5A
Unclamped single pulse inductive energy EAS 550 mJ
Load dump protection VLoadDump 80 V
Electrostatic discharge (human body model) VESD 4000 V
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
Parameter Symbol Value Unit
Junction to Ambient*
NOTES:
* For a device surface mounted on 37mm x 37mm x 1.6mm F R4 bo ard with a h igh coverag e of s ing le sided 2o z weig ht
copper.
RJA 50 °C/W
Junction to Ambient†
† For a device surface mounted on FR4 board and measured at t<=10s.
RJA 34 °C/W
BSP75G
Issue 2 - April 2005 3 www.zetex.com
© Zetex Semiconductors plc 2005
Characteristics
1 10 100
10m
100m
1
Single Pulse
Tamb
=25°C
RDS(on)
Limited
10ms
100ms
1s
Safe Operating Area
ID Drain Current (A)
VDS
Drain-Source Voltage (V)
DC
Limit of DC Self Protection
0 20 40 60 80 100 120 140 160
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
Tamb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
BSP75G
Issue 2 - April 2005 4 www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min Typ Max Unit Conditions
Static Characteristics
Drain-source clamp voltage VDS(AZ) 60 70 75 V ID=10mA
Off state drain current IDSS 0.1 3 μAVDS=12V,
VIN=0V
Off state drain current IDSS 315μAVDS=32V,
VIN=0V
Input threshold voltage*VIN(th) 12.1 VV
DS=VGS,
ID=1mA
Input current IIN 0.7 1.2 mA VIN=+5V
Input current IIN 1.5 2.7 mA VIN=+7V
Input current IIN 47mAV
IN=+10V
Static drain-source on-state
resistance RDS(on) 520 675 mΩVIN=5V,
ID=0.7A
Static drain-source on-state
resistance RDS(on) 385 550 mΩVIN=10V,
ID=0.7A
Current limit†ID(LIM) 0.7 1.1 1.75 A VIN=5V,
VDS>5V
Current limit†ID(LIM) 234AV
IN=10V,
VDS>5V
Dynamic characteristics
Turn-on time (VIN to 90% ID)t
on 2.2 10 μsRL=22Ω,
VIN=0 to 10V,
VDD=12V
Turn-off time (VIN to 90% ID)t
off 13 20 μsRL=22Ω,
VIN=10V to
0V, VDD=12V
Slew rate on (70 to 50% VDD)-dVDS/dton 10 20 V/μsRL=22Ω,
VIN=0 to 10V,
VDD=12V
Slew rate off (50 t o 70% VDD)dV
DS/dton 3.2 10 V/μsRL=22Ω,
VIN=10V to 0V,
VDD=12V
BSP75G
Issue 2 - April 2005 5 www.zetex.com
© Zetex Semiconductors plc 2005
Parameter Symbol Min Typ Max Unit Conditions
Protection Functions‡
Required input voltage for
over temperature prot ection VPROT 4.5 V
Thermal Overload trip
temperature TJT 150 175 °C
Thermal hysteresis 10 °C
Unclamped single pulse
inductive energy
Tj=25°C
EAS 550 mJ ID(ISO)=0.7A,
VDD=32V
Unclamped single pulse
inductive energy
Tj=150°C
EAS 200 mJ ID(ISO)=0.7A,
VDD=32V
Inverse Diode
Source drain voltage VSD 1V
IN=0V,
-ID=1.4A
NOTES:
* Protection features may operate outside spec for VIN<4.5V.
† The drain current is limited to a redu ced value when Vds exceeds a safe level.
‡ Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Electrical characteristics (at Tamb = 25°C unless otherwise stated) (Continued)
BSP75G
Issue 2 - April 2005 6 www.zetex.com
© Zetex Semiconductors plc 2005
Typical characteristics
024681012
0
1
2
3
4
5
-50 -25 0 25 50 75 100 125 150
0
200
400
600
800
1000
-50 -25 0 25 50 75 100 125 150
0
200
400
600
800
1000
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
0246810
0
500
1000
1500
2000
0246810
0
1
2
3
4
6V
5V
4V
8V
10V
7V
Typical Output Characteristic
T = 25°C
9V
VIN
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
VIN = 10V
ID = 0.7A
Typical On-state Resistance
R
DS(on)
On-Resistance (Ω)
Tj Junction Temperature (°C)
VIN = 5V
ID = 0.7A
Typical On-state Resistance
R
DS(on)
On-Resistance (Ω)
Tj Junction Temperature (°C)
RDS(ON)
VIN = 10V
ID = 0.7A
Typical Input Threshold Voltage
VGS(th)
VGS
= V
DS
ID = 1mA
Normalised R
DS(on)
and V
GS(th)
Tj Junction Temperature (°C)
Typical On-state Resistance
T = 25°C
ID = 0.7A
R
DS(on)
On-Resistance (Ω)
V
IN
Input Voltage (V)
T = 25°C
VDS
=10V
Source-Drain Diode Forward Voltage
V
IN
Input Voltage (V)
I
D
Drain Current (A)
BSP75G
Issue 2 - April 2005 7 www.zetex.com
© Zetex Semiconductors plc 2005
Intentionally left blank
BSP75G
Issue 2 - April 2005 8 www.zetex.com
© Zetex Semiconductors plc 2005
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