©2000 Fairchild Semiconductor International Rev. A, February 2000
BD239/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle≤2.0% Pulsed
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage: BD23 9
: BD239A
: BD239B
: BD239C
45
60
80
100
V
V
V
V
VCER Collector-Emitter Voltage: BD23 9
: BD239A
: BD239B
: BD239C
55
70
90
115
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 2 A
ICP *Collector Current (Pulse) 4 A
IB Base Current 0.6 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining V oltage
: BD239
: BD239A
: BD239B
: BD239C
IC = 30mA , IB = 0
45
60
80
100
V
V
V
V
ICEO Collector Cut-off Current: BD239/A
: BD239 B /C
VCE = 30V, IB = 0
VCE = 60V, IB = 0 0.3
0.3 mA
mA
ICES Collector Cut-off Current : BD239
: BD239A
: BD239B
: BD239C
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
0.2
0.2
0.2
0.2
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE *DC Current Gain VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A 40
15
VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.7 V
VBE(on) *Base-Emitter ON Voltage VCE = 4V, IC = 1A 1.3 V
BD239/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD240/A/B/C respectively
1.Base 2.Collector 3.Emitter
1TO-220
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD239/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Design This datasheet contains the design specifications for
product development. Specifications may change in
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