FQT3P20TF - Fairchild Semiconductor

May 2001

FQT3P20

QFETTM

FQT3P20

200V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

Features

• -0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V

• Low gate charge ( typical 6.0 nC)

• Low Crss ( typical 7.5 pF)

• Fast switching

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT3P20 Units

VDSS Drain-Source Voltage -200 V

IDDrain Current - Continuous (TC = 25°C) -0.67 A

- Continuous (TC = 70°C) -0.53 A

IDM Drain Current - Pulsed (Note 1) -2.7 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ

IAR Avalanche Current (Note 1) -0.67 A

EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns

PDPower Dissipation (TC = 25°C) 2.5 W

- Derate above 25°C 0.02 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

SOT-223

FQT Series

S●

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●

▲

▲▲

▲

▶

▶▶

▶

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▲

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Rev. A, May 2001

FQT3P20

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -2.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Unit s

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-200 -- -- V

∆BVDSS/

∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.18 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA

VDS = -160 V, TC = 125°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = -250 µA-3.0 -- -5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -0.335 A -- 2.06 2.7 Ω

gFS Forward Transconductance VDS = -40 V, ID = -0.335 A -- 0.7 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 190 250 pF

Coss Output Capacitance -- 45 60 pF

Crss Reverse Transfer Capacit ance -- 7.5 10 pF

Switching Characteristics

td(on) Turn-On Delay T ime VDD = -100 V, ID = -2.8 A,

RG = 25 Ω

-- 8.5 25 ns

trTurn-On Rise Time -- 35 80 ns

td(off) Turn-Off De l a y Time -- 12 35 ns

tfTurn-Off Fa ll Time -- 2 5 60 ns

QgTotal Gate Ch arge VDS = -160 V, ID = -2.8 A,

VGS = -10 V

-- 6.0 8.0 nC

Qgs Gate-Source Charge -- 1.7 -- nC

Qgd Gate-Drain Charge -- 2.9 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -0.67 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -2.7 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A -- -- -5.0 V

trr Reverse Recover y Time VGS = 0 V, IS = -2.8 A,

dIF / dt = 100 A/µs

-- 100 -- ns

Qrr Reverse Recovery Charge -- 0.34 -- µC

FQT3P20

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10-1

100

25℃

150℃

※

N o te s :

1 . V GS = 0V

2. 250μs Puls e Te st

-IDR , Reverse Drain Current [A]

-VSD , Source-Drain Voltage [V]

246810

10-1

100

※ No tes :

1. V DS = -40V

2. 250μs Pulse Test

-55℃

150℃

25℃

-ID , D rain C u rre n t [A ]

-VGS , Gate-Source Voltage [V]

01234567

VDS = -100V

VDS = -40V

VDS = -160V

※ Note : ID = -2.8 A

-VGS , Gate-Source Voltage [V]

QG, T o tal G a te Ch a rg e [nC]

10-1 100101

100

200

300

400

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※

N o te s :

1 . VGS = 0 V

2 . f = 1 MH z

Crss

Coss

Ciss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

02468

※ N o te : TJ = 25℃

VGS = - 20V

VGS = - 10V

RDS(on) [Ω],

Drain-Source O n-Resistance

-ID , Drain Cu r re n t [A]

10-1 100101

10-1

100

V GS

Top : -15.0 V

-1 0 .0 V

-8 .0 V

-7 .0 V

-6 .5 V

-6 .0 V

Bottom : -5.5 V

※ No te s :

1. 250μs Pulse Test

2. T C = 25℃

-ID, D r ain C u rr e nt [A]

-VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitanc e Ch aracterist i cs Figure 6. Ga te Ch arge Cha ra ct eri stics

Figu re 3. On-R esistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s

FQT3P20

10-5 10-4 10-3 10-2 10-1 100101102103

10-1

100

101※ Notes :

1. Z θJC(t) = 50 ℃/W M a x .

2 . Du ty F a c tor, D=t1/t2

3. T JM - TC = PDM * ZθJC(t)

s in g le p u ls e

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Therm al Response

t1, Square W ave Pulse Duration [sec]

25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

-ID, Drain C u rre n t [A]

TC, Case Temperature [℃

]

10-1 100101102

10-3

10-2

10-1

100

101

100 ms

10 ms

1 ms 100 µs

Operation in Th is Area

is Limited by R DS(on)

※ No te s :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

※ No te s :

1. VGS = -10 V

2. I D = -0.335 A

RDS(ON) , (Normalize d )

Drain-So urce O n-Res istance

TJ, Junction T em pe rature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※

N o te s :

1 . V GS = 0 V

2 . ID = -250 μA

-BV DSS , ( N o r ma lized )

D rain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdown Voltag e Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Res pons e Cur ve

PDM

FQT3P20

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

Charge

VGS

-10V Qg

Qgs Qgd

VDD

( 0.5 rated VDS )

-10V

VDS RL

DUT

VDD

( 0.5 rated VDS )

-10V

VDS RL

DUT

RGVin

VDS 90%

10%

td(on) tr

ton toff

td(off) tf

Vin

VDS 90%

10%

td(on) tr

ton toff

td(off) tf

VDD

VDS

-10V DUT

VDD

VDS

-10V DUT

EAS =L

L IAS2

----

1--------------------

BVDSS -- VDD

BVDSS

VDD

IAS

VDS (t)

ID (t)

t pTime

EAS =L

L IAS2

----

1--------------------

BVDSS -- VDD

BVDSS

EAS =L

L IAS2

----

EAS =L

L IAS2

----

1--------------------

BVDSS -- VDD

BVDSS

VDD

IAS

VDS (t)

ID (t)

t pTime

FQT3P20

Peak Diode Recovery dv/dt Test Circ ui t & Waveform s

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

Scontrol le d by pulse period

VDD

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

Scontrol le d by pulse period

VDD

10V

VGS

( Driver )

( DUT )

VDS

( DUT ) VDD

Body Diode

Forward Voltage Drop

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

-------------------------- 10V

VGS

( Driver )

( DUT )

VDS

( DUT ) VDD

Body Diode

Forward Voltage Drop

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQT3P20

Package Dimensions

3.00 ±0.10

7.00 ±0.30

0.65 ±0.20

0.08MAX

3.50 ±0.20

1.60 ±0.20

(0.46)

(0.89)

(0.60) (0.60)

1.75 ±0.20

0.70 ±0.10

4.60 ±0.25

6.50 ±0.20

(0.95) (0.95)

2.30 TYP

0.25

MAX1.80

0°~10°

+0.10

–0.05

0.06 +0.04

–0.02

SOT-223

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NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.

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CORPORATION.

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which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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