For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
v02.0610
General Description
Features
Functional Diagram
Low Noise Figure: 0.5 dB
High Gain: 24 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
Typical Applications
The HMC616LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• DAB Receivers
Electrical Specications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter Vdd = +3V Vdd = +5V Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 175 - 230 230 - 660 175 - 230 230 - 660 MHz
Gain 20 22.5 15 20 21 24 15 21 dB
Gain Variation Over Temperature 0.002 0.005 dB/ °C
Noise Figure 0.5 0.8 0.5 0.8 0.5 0.8 0.5 0.8 dB
Input Return Loss 10 16 12 14 dB
Output Return Loss 9 10 9 10 dB
Output Power for 1 dB
Compression (P1dB) 8 11 10 15 11 15 14 19 dBm
Saturated Output Power (Psat) 8.5 13 11 15.5 12.5 17.5 15.5 19.5 dBm
Output Third Order Intercept (IP3) 20 30 32 37 dBm
Supply Current (Idd) 30 45 30 45 90 115 90 115 mA
* Rbias resistor sets current, see application circuit herein
The HMC616LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 175 and 660 MHz. The amplier
has been optimized to provide 0.5 dB noise gure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC616LP3(E) shares
the same package and pinout with the HMC617-
LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows
the designer to tailor the linearity performance of the
LNA for each application. The HMC616LP3(E) offers
improved noise gure versus the previously released
HMC356LP3(E).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
[1] Vdd = 5V [2] Vdd = 3V
Gain vs. Temperature [2]
Gain vs. Temperature [1]
Reverse Isolation vs. Temperature [1]
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25C
+85C
- 40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.2 0.4 0.6 0.8 1 1.2 1.4
Vdd= 5V
Vdd= 3V
RESPONSE (dB)
FREQUENCY (GHz)
S21
S22
S11
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
P1dB vs. Temperature
Psat vs. Temperature
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
[1] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
24
28
32
36
40
0.2 0.3 0.4 0.5 0.6 0.7
+25 C
+85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
10
12
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
10
12
14
16
18
20
22
24
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
Vdd=5V
Vdd=3V
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85C
+25 C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Power Compression @ 500 MHz [1]
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Power Compression @ 500 MHz [2]
Power Compression @ 400 MHz [1] Power Compression @ 400 MHz [2]
[1] Vdd = 5V [2] Vdd = 3V
Gain, Power & Noise Figure
vs. Supply Voltage @ 400 MHz
Gain, Power & Noise Figure
vs. Supply Voltage @ 500 MHz
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2 0
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
-18 -16 -14 -12 -10 -8 -6 -4 -2 0 2
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Gain Low Frequency Tune [1] Input Return Loss Low Frequency Tune [1]
Output Return Loss Low Frequency Tune [1]
Output IP3 Low Frequency Tune [1]
P1dB Low Frequency Tune [1]
Noise Figure Low Frequency Tune [1] [2]
14
16
18
20
22
24
26
0.15 0.175 0.2 0.225 0.25
Vdd=3V
Vdd=5V
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.15 0.175 0.2 0.225 0.25
Vdd=5V
Vdd=3V
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.15 0.175 0.2 0.225 0.25
Vdd=5V
Vdd=3V
RETURN LOSS (dB)
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
0.15 0.175 0.2 0.225 0.25
Vdd=5V
vdd=3V
P1dB (dBm)
FREQUENCY (GHz)
16
20
24
28
32
36
40
0.15 0.175 0.2 0.225 0.25
Vdd=5V
Vdd=3V
IP3 (dBm)
FREQUENCY (GHz)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.15 0.175 0.2 0.225 0.25
Vdd=5V
Vdd=3V
NOISE FIGURE (dB)
FREQUENCY (GHz)
[1] Rbias = 2k, L1 = 82 nH, L2 = 82 nH [2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Output IP3 vs. Rbias @ 500 MHz Gain, Noise Figure & Rbias @ 500 MHz
Output IP3 vs. Rbias @ 400 MHz Gain, Noise Figure & Rbias @ 400 MHz
16
17
18
19
20
21
0.2
0.3
0.4
0.5
0.6
0.7
1000 10000
Vdd=3V
Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias(Ohms)
500
22
24
26
28
30
32
34
36
38
40
1000 10000
Vdd= 3V
Vdd= 5V
IP3 (dBm)
Rbias (Ohms)
500
16
17
18
19
20
21
22
23
24
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1000 10000
Vdd=3V
Vdd=5V
GAIN (dB)
NOISE FIGURE (dB)
Rbias(Ohms)
500
22
24
26
28
30
32
34
36
38
40
1000 10000
Vdd= 3V
Vdd= 5V
IP3 (dBm)
Rbias (Ohms)
500
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6 V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 8.93 mW/°C above 85 °C) 0.58 W
Thermal Resistance
(channel to ground paddle) 112 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
2.7 20
3.0 30
3.3 40
4.5 80
5.0 90
5.5 100
Note: Amplier will operate over full voltage range shown above.
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Vdd (V) Rbias (Ω) Idd (mA)
Min Max Recommended
3V 1k [1] Open Circuit
2.7k 27
3.92k 31
4.7k 33
10k 39
5V 0 Open Circuit
820 73
2k 84
3.92k 91
10k 95
[1] With Vdd = 3V, Rbias < 1k Ohm is not recommended and may result in the LNA becoming conditionally stable.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC616LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 616
XXXX
HMC616LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 616
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 9
Pin Number Function Description Interface Schematic
1, 3 - 5, 7, 9,
10, 12 - 14, 16 N/C No connection required. These pins may be connected
to RF/DC ground without affecting performance.
2 RFIN This pin is DC coupled. DC blocking capacitor
required. See application circuit.
6 GND This pin and ground paddle must
be connected to RF/DC ground.
11 RFOUT This pin is matched to 50 Ohms.
8 RES This pin is used to set the DC current of the amplier by
selection of external bias resistor. See application circuit.
15 Vdd Power Supply Voltage. Choke inductor and bypass capacitors
are required. See application circuit.
Pin Descriptions
Application Circuit
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Components for Selected Frequencies
Tuned Frequency 175 - 230 MHz 230 - 660 MHz
Rbias 2.0k Ohms 3.92k Ohms
L1 82 nH 47 nH
L2 82 nH 51 nH
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 10
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA RF Connector
J3, J4 DC Pin
C1 10nF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 0.47 µF Capacitor, 0603 Pkg.
C4 100 pF Capacitor, 0402 Pkg.
L1 47 nH Inductor, 0603 Pkg.
L2 51 nH Inductor, 0402 Pkg.
R1 (Rbias) 3.92 k Resistor, 0402 Pkg.
U1 HMC616LP3(E) Amplier
PCB [2] 120616 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
List of Materials for Evaluation PCB 120728 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz