2N7002DW OptiMOSTM Small-Signal-Transistor Product Summary Features 60 V V GS=10 V 3 V GS=4.5 V 4 V DS * Dual N-channel R DS(on),max * Enhancement mode * Logic level * Avalanche rated 0.3 ID A * Fast switching * Qualified according to AEC Q101 PG-SOT363 * 100% lead-free; RoHS compliant 6 5 4 * Halogen-free according to IEC61249-2-21 1 Type Package Tape and Reel Information 2N7002DW PG-SOT363 H6327: 3000 pcs/reel Parameter 1) Symbol Conditions Continuous drain current ID HalogenFree Packing X8s Yes Non Dry Value T A=25 C 0.30 T A=70 C 0.24 I D,pulse T A=25 C 1.2 Avalanche energy, single pulse E AS I D=0.3 A, R GS=25 1.3 Reverse diode dv /dt dv /dt I D=0.3 A, V DS=48 V, di /dt =200 A/s, T j,max=150 C 6 Gate source voltage V GS 20 JESD22-A114 (HBM) Power dissipation P tot Operating and storage temperature T j, T stg T A=25 C IEC climatic category; DIN IEC 68-1 1) Rev.2.2 3 Marking Pulsed drain current ESD class 2 Unit A mJ kV/s V class 0 (<250V) 0.5 W -55 ... 150 C 55/150/56 Remark: one of both transistors in operation. page 1 2011-06-16 2N7002DW Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - minimal footprint 2) R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 A 60 - - Gate threshold voltage V GS(th) V DS=VGS, I D=250 A 1.5 2.1 2.5 Drain-source leakage current I D (off) V DS=60 V, V GS=-10 V, T j=25 C - - 0.1 V DS=60 V, V GS=0 V, T j=150 C - - 5 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.25 A - 2.0 4 V GS=10 V, I D=0.5 A - 1.6 3 |V DS|>2|I D|R DS(on)max, I D=0.24 A 0.2 0.36 - Transconductance g fs S 2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70m thick and 20mm long. Rev.2.2 page 2 2011-06-16 2N7002DW Parameter Values Symbol Conditions Unit min. typ. max. - 13 20 - 4.1 6 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.0 3 Turn-on delay time t d(on) - 3.0 4.5 Rise time tr - 3.3 5 Turn-off delay time t d(off) - 5.5 9 Fall time tf - 3.1 5 Gate to source charge Q gs - 0.05 0.1 Gate to drain charge Q gd - 0.2 0.4 Gate charge total Qg - 0.4 0.6 Gate plateau voltage V plateau - 4.0 - V - - 0.3 A - - 1.2 - 0.96 1.2 V - 8.5 13 ns - 2.4 4 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.5 A, R G=6 pF ns Gate Charge Characteristics V DD=48 V, I D=0.5 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev.2.2 T A=25 C V GS=0 V, I F=0.5 A, T j=25 C V R=30 V, I F=0.5 A, di F/dt =100 A/s page 3 2011-06-16 2N7002DW 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS10 V 0.35 0.5 0.3 0.25 0.2 0.3 I D [A] P tot [W] 0.4 0.15 0.2 0.1 0.1 0.05 0 0 0 40 80 120 0 160 40 80 T A [C] 120 160 T A [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 1 s 100 0.5 10 s 102 Z thJA [K/W] I D [A] 100 s 1 ms 10-1 10 ms 0.2 0.1 0.05 0.02 single pulse 0.01 101 DC 10-2 100 10-3 1 10 100 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] V DS [V] Rev.2.2 10-5 page 4 2011-06-16 2N7002DW 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 6 0.6 5V 7V 10 V 0.5 5 4.5 V 2.9 V 4V 3.5 V 4V 4 R DS(on) [] 0.4 I D [A] 3.2 V 0.3 3.5 V 3 4.5 V 5V 2 0.2 7V 10 V 3.2 V 1 0.1 2.9 V 0 0 0 1 2 3 4 0 5 0.1 V DS [V] 0.2 0.3 0.4 0.5 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 0.6 0.5 0.45 0.5 0.4 0.35 0.4 g fs [S] I D [A] 0.3 0.3 0.25 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0 1 2 3 4 5 Rev.2.2 0.00 0.10 0.20 0.30 0.40 I D [A] V GS [V] page 5 2011-06-16 2N7002DW 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.3 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=250 A parameter: I D 6.0 3.2 2.8 5.0 98 % 2.4 4.0 V GS(th) [V] R DS(on) [] 2 98 % 3.0 typ 1.6 2% 1.2 2.0 typ 0.8 1.0 0.4 0.0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 102 150 C, 98% 100 150 C Ciss I F [A] C [pF] 25 C 101 Coss 25 C, 98% 10-1 10-2 Crss 100 10-3 0 10 20 30 V DS [V] Rev.2.2 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2011-06-16 2N7002DW 13Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 V GS=f(Q gate); I D=0.5 A pulsed parameter: TJ(start) parameter: V DD 100 10 9 8 30 V 25 C 10 7 100 C -1 12 V 125 C 48 V I AV [A] V GS [V] 6 5 4 10-2 3 2 1 10-3 0 100 101 102 103 0 0.1 0.2 0.3 0.4 0.5 Q gate [nC] t AV [s] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 70 V BR(DSS) [V] 65 60 55 50 -40 0 40 80 120 160 T j [C] Rev.2.2 page 7 2011-06-16 2N7002DW SOT363 Package Outline: Footprint: Rev.2.2 Packing: page 8 2011-06-16 2N7002DW Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 page 9 2011-06-16