INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
VCES = 600V
IC = 60A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.6V
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
G
C
E
Gate Collector Emitter
TO-247AC
AUIRGP4063D
TO-247AD
AUIRGP4063D-E
GCE
C
GCE
C
AUTOMOTIVE GRADE AUIRGP4063D
AUIRGP4063D-E
1www.irf.com © 2013 International Rectifier July 12, 2013
Base part number
Package Type
Orderable Part Number
Form
Quantity
AUIRGP4063D
Tube
25
AUIRGP4063D
AUIRGP4063D-E
Tube
25
AUIRGP4063D-E
Standard Pack
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 100
I
C
@ T
C
= 100°C Continuous Collector Current 60
ICM Pulse Collector Current, VGE = 15V 144
ILM Clamped Inductive Load Current, VGE = 20V
c
192 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 82
I
F
@ T
C
= 100°C Diode Continous Forward Current 50
I
FM
Diode Maximum Forward Current
e
192
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 330 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 170
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
AUIRGP4063D/E
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2
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.92
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES
Col l ector -to- E mi tter B r eak down V ol tage
600——VV
GE = 0V, IC = 150μA
f
CT 6
V(BR)CES /
TJT emperature Coeff. of B reakdown Voltage —0.30—V/°CV
GE = 0V, IC = 1mA (25°C-175°C) CT 6
—1.61.9 I
C = 48A, VGE = 15V, TJ = 25°C 5,6 ,7
VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — V IC = 48A, VGE = 15V, TJ = 150°C 9,10,11
—2.0— I
C = 48A, VGE = 15V, TJ = 175°C
VGE (th ) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE , IC = 1.4mA 9, 10,
VGE ( t h ) /
TJ Threshold Voltage temp. coefficient — -21 —
mV/°C
VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12
gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs
ICES Collector-to-Emitter Leakage Current — 1.0 150 μAV
GE = 0V, VCE = 600V
— 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A 8
—1.45— I
F = 48A, TJ = 175°C
IGE S Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
QgTotal Gate Charge (turn-on) — 95 140 IC = 48A 24
Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT 1
Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V
Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT 4
Eoff Turn-Off Switching Loss — 1275 1481 μJR
G = 10, L = 200μH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 1900 2622 E nergy los s es include tai l & dio de revers e recovery
td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT 4
trRise time — 40 56 ns RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
td(off) Turn-Off delay time — 145 176
tfFall time — 35 46
Eon Turn-On Switching Loss — 1625 — IC = 48A, VCC = 400V, VGE =15V 13 , 15
Eoff Turn-Off Switching Loss — 1585 — μJR
G=10, L=200μH, LS=150nH, TJ = 175°C
f
CT 4
Etotal Total Switching Loss — 3210 — E nergy los s es include tai l & dio de rever s e recovery
WF1, WF2
td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14 , 16
trRise time — 45 — ns RG = 10, L = 200μH, LS = 150nH CT 4
td(off) Turn-Off delay time — 165 — TJ = 175°C WF1
tfFall time — 45 — WF2
Cies Input Capacitance — 3025 — pF VGE = 0V 23
Coes Output Capacitance — 245 — VCC = 30V
Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz
TJ = 175°C, IC = 192A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT 2
Rg = 10, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC = 400V, Vp =600V 22, CT 3
Rg = 10, VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 845 — μJT
J = 175°C 17 , 18 , 19
trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A 20, 21
Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10, L =200μH, Ls = 150nH WF 3
Conditions
AUIRGP4063D/E
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
1 10 100 1000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
25 50 75 100 125 150 175
TC (°C)
0
100
200
300
400
Ptot (W)
25 50 75 100 125 150 175
TC, Case Temperature (°C)
0
20
40
60
80
100
IC, Collector Current (A)
AUIRGP4063D/E
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4
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
0246810
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0
VF (V)
0
20
40
60
80
100
120
140
160
180
200
IF (A)
-40°c
25°C
175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 24A
ICE = 48A
ICE = 96A
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
TJ = 25°C
TJ = 175°C
AUIRGP4063D/E
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Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
020 40 60 80 100
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 25 50 75 100 125
Rg ()
1000
1500
2000
2500
3000
3500
4000
4500
5000
Energy (μJ)
EOFF
EON
025 50 75 100 125
RG ()
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
020 40 60 80 100
IF (A)
0
5
10
15
20
25
30
35
40
45
IRR (A)
RG = 10
RG = 22
RG = 47
RG = 100
025 50 75 100 125
RG (
10
15
20
25
30
35
40
45
IRR (A)
0 50 100 150
IC (A)
0
1000
2000
3000
4000
5000
6000
Energy (μJ)
EOFF
E
ON
AUIRGP4063D/E
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6
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600μH
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0200 400 600 800 1000
diF /dt (A/μs)
10
15
20
25
30
35
40
45
IRR (A)
020 40 60 80 100
IF (A)
0
100
200
300
400
500
600
700
800
900
Energy (μJ)
RG = 10
RG = 22
RG = 47
RG = 100
8 1012141618
VGE (V)
4
6
8
10
12
14
16
18
Time (μs)
50
100
150
200
250
300
350
400
Current (A)
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 255075100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
0 500 1000 1500
diF /dt (A/μs)
1000
1500
2000
2500
3000
3500
4000
QRR (μC)
10
22
100
47
48A
24A
96A
AUIRGP4063D/E
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Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.0872 0.000114
0.1599 0.001520
0.2020 0.020330
J
J
1
12
23
3
R1
R1R2
R2R3
R3
C
Ci iRi
Ci= iRi
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.2774 0.000908
0.3896 0.003869
0.2540 0.030195
J
J
1
12
23
3
R1
R1R2
R2R3
R3
C
Ci iRi
Ci= iRi
AUIRGP4063D/E
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8
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
DC
4x
DUT
360V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
C f orce
400μH
G f orce DUT
D1 10K
C sen se
0.0075μ
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
AUIRGP4063D/E
www.irf.com © 2013 International Rectifier July 12, 20139
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
700
-0.40 0.10 0.60 1.10
Time(μs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
E
OFF
Loss
5% V
CE
5% I
CE
90% I
CE
tf
-100
0
100
200
300
400
500
600
6.20 6.40 6.60 6.80 7.00
Time (μs)
V
CE
(V)
-20
0
20
40
60
80
100
120
E
ON
TEST
CURRE
90% test
10% test
5% V
CE
tr
-40
-30
-20
-10
0
10
20
30
40
50
60
-0.15 -0.05 0.05 0.15 0.25
time (μS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Peak
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (μS)
V
CE
(V)
-100
0
100
200
300
400
500
600
I
CE
(A)
V
CE
I
CE
AUIRGP4063D/E
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10
TO-247AC package is not recommended for Surface Mount Application.
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUGP4063D
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRGP4063D/E
www.irf.com © 2013 International Rectifier July 12, 201311
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AU4063D-E
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRGP4063D/E
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12
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Highest passing voltage.
Qualification Information†
Moisture Sensitivity Level TO-247AC N/A
TO-247AD N/A
RoHS Compliant Yes
ESD
Machine Model Class M4 (±425V)††
(per AEC-Q101-002)
Human Body Model Class H2 (±4000V)††
(per AEC-Q101-001)
Charged Device Model Class C5 (±1125V)††
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101)†
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
AUIRGP4063D/E
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IMPORTANT NOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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