PD - 97678A IRFHM8363PbF VDS max 20 V 20.4 Qg typ 6.7 S G S G D D nC D D D PQFN Dual 3.3X3.3 mm * A 6 i D * 10 (@Tc(Bottom) = 25C) m 6 ID ' (@VGS = 4.5V) ' 14.9 (@VGS = 10V) ' ' RDS(on) max V : ,( 9 3 72 Vgs 30 HEXFET(R) Power MOSFET Applications * Power Stage for high frequency buck converters * Battery Protection charge and discharge switches Features and Benefits Features Low Thermal Resistance to PCB (< 6.7C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFHM8363TRPBF IRFHM8363TR2PBF PQFN Dual 3.3mm x 3.3mm PQFN Dual 3.3mm x 3.3mm Benefits Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS 20 ID @ TA = 25C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25C Continuous Drain Current, VGS @ 10V 8.6 29 ID @ TC(Bottom) = 100C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 25C IDM Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TA = 25C Power Dissipation c PD @TC(Bottom) = 25C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 11 hi hi 10i A 116 2.7 g Units 19 0.02 -55 to + 150 W W/C C Notes through are on page 9 www.irf.com 1 06/29/11 IRFHM8363PbF Static @ TJ = 25C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 --- --- RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.022 12.2 --- 14.9 VGS(th) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient --- 1.35 --- 16.3 1.8 -6.3 20.4 2.35 --- IDSS Drain-to-Source Leakage Current --- --- --- --- 1.0 150 A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 20 --- --- --- 15 6.7 --- --- --- S nC VDS = 10V, ID = 10A VGS = 10V, VDS = 15V, ID = 10A Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge --- --- 2.1 1.0 --- --- Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- --- 2.0 1.6 3.0 --- --- --- Output Charge --- 7.6 --- nC Gate Resistance Turn-On Delay Time Rise Time --- --- --- 1.6 14 94 --- --- --- Turn-Off Delay Time Fall Time Input Capacitance --- --- --- 12 33 --- --- --- Output Capacitance Reverse Transfer Capacitance --- --- BVDSS VDSS/TJ Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss 1165 260 100 Max. Units --- --- Conditions VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1.0mA VGS = 10V, ID = 10A m VGS = 4.5V, ID = 8.0A V VDS = VGS, ID = 25A mV/C e e VDS = 15V VGS = 4.5V nC ID = 10A VDS = 24V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 10A ns RG=1.8 VGS = 0V pF VDS = 10V = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Max. 29 10 Typ. --- --- d Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr Min. --- c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ton Typ. --- Max. Units 10 i --- --- 116 --- --- --- 17 1.3 26 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25C, IS = 10A, VGS = 0V TJ = 25C, IF = 10A, VDD = 15V di/dt = 280A/s --- 24 36 nC Time is dominated by parasitic Inductance G S e e Thermal Resistance RJC (Top) f Junction-to-Case f RJA Junction-to-Ambient RJC (Bottom) RJA (<10s) 2 Junction-to-Case g Junction-to-Ambient g Parameter Typ. --- --- --- --- Max. Units 6.7 72 C/W 47 32 www.irf.com IRFHM8363PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 100 10 1 2.5V BOTTOM 10 2.5V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 0.1 0.1 1 10 0.1 100 1 Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 100 T J = 150C 10 T J = 25C VDS = 15V 60s PULSE WIDTH 1.0 1 2 3 4 5 6 ID = 10A VGS = 10V 1.4 1.2 1.0 0.8 0.6 7 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 10A C oss = C ds + C gd Ciss 1000 Coss Crss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 10 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFHM8363PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150C 10 T J = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 1msec 10msec 10 Limited by source bonding technology 1 DC Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.1 0.0 0.5 1.0 1.5 2.0 0 2.5 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 30 2.8 i VGS(th) , Gate threshold Voltage (V) Limited by source bonding technology 25 ID, Drain Current (A) i 20 15 10 5 0 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 ID = 25A ID = 250A ID = 1.0mA ID = 1.0A 1.0 0.8 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) C/W 10 D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 35 120 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFHM8363PbF ID = 10A 30 25 20 TJ = 125C 15 T J = 25C 10 ID 2.3A 4.7A BOTTOM 10A TOP 100 80 60 40 20 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width 1 s Duty Factor 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01 tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRFHM8363PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRFHM8363PbF PQFN Dual 3.3x3.3 Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN Dual 3.3x3.3 Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFHM8363PbF PQFN Dual 3.3x3.3 Tape and Reel 8 www.irf.com IRFHM8363PbF Qualification information Cons umer Qualification level Moisture Sensitivity Level (per JE DE C JE S D47F guidelines ) MS L1 PQFN Dual 3.3mm x 3.3mm RoHS compliant (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.58mH, RG = 50, IAS = 10A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 10A by source bonding technology. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/11 www.irf.com 9