PD-90413A IRFF9024 60V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET (R) TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) ID IRFF9024 -60V 0.28 -6.4A TO-39 Description Features The HEXFET (R) technology is the key to International Rectifier's HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high trans conductance. Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol ID1 @ VGS = -10V, TC = 25C Parameter Value Continuous Drain Current -6.4 ID2 @ VGS = -10V, TC = 100C Continuous Drain Current -4.1 Units A IDM @ TC = 25C Pulsed Drain Current -26 PD @TC = 25C Maximum Power Dissipation 20 W Linear Derating Factor 0.16 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 120 mJ IAR Avalanche Current -6.4 A EAR Repetitive Avalanche Energy 2.0 mJ dv/dt Peak Diode Recovery dv/dt -4.5 V/ns TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight -55 to + 150 C 300 (0.063 in. /1.6 mm from case for 10s) 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-11-13 IRFF9024 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Symbol Parameter BVDSS BVDSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gfs IDSS Gate Threshold Voltage Forward Transconductance IGSS Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time QG QGS QGD td(on) tr td(off) tf Min. Typ. Max. Units -60 --- --- --- -0.068 --- --- --- 0.28 --- --- 0.29 -2.0 --- -4.0 1.3 --- --- --- --- -25 --- --- -250 --- --- -100 --- --- 100 8.4 --- 19 2.0 --- 5.4 6.0 --- 11 --- --- 20 --- --- 100 --- --- 23 --- --- 44 Ls +LD Total Inductance --- 7.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 570 360 65 --- --- --- Test Conditions V V/C VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID2 = -4.1A VGS = -10V, ID1 = -6.4A V VDS = VGS, ID = -250A S VDS = -15V, ID2 = -4.1A VDS = -48V, VGS = 0V A VDS = -48V,VGS = 0V,TJ =125C VGS = -20V nA VGS = 20V ID1 = -6.4A nC VDS = -30V VGS = -10V VDD = -30V ID1 = -6.4A ns RG = 7.5 Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire internally bonded from Source pin to Drain pin nH VGS = 0V VDS = -25V = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -6.4 ISM Pulsed Source Current (Body Diode) --- --- -26 VSD Diode Forward Voltage --- --- -6.3 V TJ = 25C,IS = -6.4A, VGS = 0V trr Reverse Recovery Time --- --- 200 ns TJ = 25C, IF = -6.4A, VDD -50V Qrr Reverse Recovery Charge --- --- 2.2 C di/dt = -100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Min. Typ. Max. RJC Symbol Junction-to-Case Parameter --- --- 6.25 RJA Junction-to-Ambient (Typical socket mount) --- --- 175 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, Peak IL = -6.4A ISD -6.4A, di/dt -200A/s, VDD -60V, TJ 150C, Suggested RG = 7.5 Pulse width 300 s; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc. 2018-11-13 IRFF9024 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 3 International Rectifier 2018-11-13 IRFF9024 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 9. Maximum Drain Current Vs. Case Temperature Fig 8. Maximum Safe Operating Area Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 International Rectifier HiRel Products, Inc. 2018-11-13 IRFF9024 Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2018-11-13 IRFF9024 Case Outline and Dimensions - TO-205AF (TO-39) www.infineon.com/irhirel 101 N. Sepulveda Boulevard, El Segundo, California 90245, USA Tel: +1 (310) 252-7105 2520 Junction Avenue, San Jose, California 95134, USA Tel: +1 (408) 434-5000 205 Crawford Street, Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc. 2018-11-13 IRFF9024 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. 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For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 7 International Rectifier HiRel Products, Inc. 2018-11-13