MIL SPECS Ic Goooo1es OOL3bb6 4 i MIL-S-19500/436( USAF ) AMENDMENT 5 9 JANUARY 1984 SUPERSEDING AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C JAN, JANTX, AND JANTXY This amendment forms a part of Military Specification MIL-S-19500/436(USAF), dated 28 August 1970, and is approved for use by Rome Air Development Center, Department of the Air Force and is avaflable for use by all Departments and Agencies of the Department of Defense. PAGE 1 * TITLE: Delete and substitute as printed above. 1.3: C column, Capacitance ratio column, and Q column: Delete "(See table IV)" and substitute "(See tables IV and Vv)". PAGE 2 3.2: Delete "C, --- Case Capacitance" and "L, ---- Series inductance". PAGE 3 4.2, line 7, LTPD: Delete "5" and substitute "7". 4.3, line 4: Delete "subgroups 6 and 7" and substitute subgroups 5 and 6". Also line 5, delete "Subgroup 1" and substitute subgroups 1, 3 and 4". PAGE 4 4.4.2, equation: Delete "106" and substitute "102", PAGE 5 4.4.3 and 4.4.4: Delete in their entirety. 4.5.2, line 2: Delete "lease" and substitute "least". 4.5.3, line 5: Delete "in 15 minutes" and substitute "15 minutes minimum". PAGE 7 Figure 1, Title: Delete "Semiconductor Device, diode, silicon, voltage regulator press TX_and non-TX types (N55188 thru INSS46B" and substitute "Semiconductor evice, diode, silicon, voltage requlator types, TX and non-TX, INS5%01B thru 1N54/76B and IN546IC thru IN54/76C7,. PAGE 8 TABLE I, Group A inspection, Subgroup 3, "Case, capacitance" and "Series, inductance": Delete. PAGE 9 TABLE II, Group B inspection, Subgroup 2, Hermetic seal, Method 1071, Details column: Delete "Test cond. 'E' for gross leaks" and substitute Test cond. 'D' or E' for gross leaks." Following Hermetic seal, Method 1071, add "Moisture resistance, Method 1021". 1 of 3 FSC 5961MIL SPECS Ic Goooo1es QOOlI6b7 & i MIL-S-19500/436(USAF ) AMENDMENT 5 PAGE 10 TABLE II, Group B inspection - Continued, Subgroup 6, Steady-state operation life, Method 1027, Details column: Delete "Ta = +150C" and substitute "Ta = 150C". PAGE 11 TABLE III, Group C inspection: a. Subgroup 3, End points: Delete (Same as subgroup 3)" and replace with the following: "Reverse current, Method 4016, DC method; Vp = 25 V de Ip, 20 nA dc amd Capacitance, Method 4001, V = 4 V dc, f = 1 MHz, C, Col. 3, Tables IY and V, Col. 4, Tables IV and V, pF.". b. Subgroup 5, End points: Delete entries for Reverse current and Capacitance in their entirety and substitute "(Same as subgroup 3)". Capacitance, Method 4001, V = 4 V dc, f = 1 MHz, C, Col. 3, Table IV, Col. 4, Table IV, pF," and substitute "(Same as subgroup 3)". c. Subgroup 6, End points: Delete "(Same as subgroup 5)" and substitute "(Same as subgroup 3). PAGE 12 TABLE IV, device 1N5463B, Capacitance, Min. Limit, Col. 3: Delete "9.95" and substitute "9.5". Add the following new table: TABLE V T Col. 1 Cot. 2 Col. 3 Col. 4 Col. 5 Colt. 6 Col. / | | Type Capacitance Capacitance ratio Q) | | Vp = 4 V de From Vp = 2 V de Vp = 4 V de | l To VR = 30 VY dc f = 50 MHz | | I | Nom Min Max Min Max Min | I | F F F | } 1N5461C r8 oP ss 654 2.7 3.1 600 { } 1N5462C 8.2 8.04 8.36 2.8 3.1 600 | { 1N5463C 10.0 9.8 10.2 2.8 3.1 550 I | 1N5464C 12.0 11.76 12.24 2.8 3.1 550 | {| 1N5465C 15.0 14.7 15.3 2.8 3.1 550 i | 1N5466C 18.0 17.64 18.36 2.9 3.1 500 I ] 1N5467C 20.0 19.60 20.4 2.9 3.1 500 | | 1N5468C 22.0 21.56 22.44 2.9 3.2 500 | |] 1N5469C 27.0 26.46 27.54 2.9 3.2 500 | | 1N5470C 33.0 32.34 33.66 2.9 3.? 500 | | 1N5471C 39.0 38.22 39.78 2.9 3.2 450 I 1 1N5472C 47.0 46.06 47.94 2.9 3.2 400 | | 1N5473C 56.0 54.88 57.12 2.9 3.3 300 | | 1N5474C 68.0 66.64 69.36 2.9 3.3 250 | | 1N5475C 82.0 80.36 83.64 2.9 3.3 225 | | 1N5476C 100.0 98.0 102.00 2.9 3.3 200 | PAGE 13 TABLE Y, paragraphs 4.5.7, 4.5.7.2 and 4.5.7.3: Renumber TABLE V" to read TABLE VI" wherever it appears.MIL SPECS Ic Boooo1es OOL3bb4 & i MIL-S-19500/436(USAF) AMENDMENT 5 NOTE: The margins of this amendment are marked with an asterisk to indicate where changes from the previous amendment were Made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous amendment. Custodian: Preparing activity: Air Force - 17 . Air Force - 17 Review activities: (Project 5961-F877) Air Force - 11, 99 User activity: Air Force - 19 Agent: DLA - ES 3 & U.S. GOVERNMENT PRINTING OFFICE 1984705040/A1006MIL SPECS Ic Boooo1es 0013664 T a MIL-S-19500/436(USAF) 28 August 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND TX1N5461B THRU TX1N5476B 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a silicon, voltage-variable-capacitor diode for use in tuning and harmonic generator appli- cations. The prefix "TX" is used on devices submitted to and passing the special process-conditioning, testing, and screening specified in 4.5 through 4.5.7.3. 1.2 Physical dimensions. See figure 1 (DO-7). 1.3 Ratings and characteristics. Pr l/ vRM(wkg) BV Cc Q I, - 10u.Adc VR = 4 Vdc Capacitance VR = 4 Vde = 1 Miz ratio = 50 MHz mW V(pk) Vdc pf Min. | --- won 30 (See table (See table (See table IV) IV) IV) Max. | 400 30 ss: (See table --- o-- IV) 1/Derate linearly 2.67 mW/C above 25C. OPERATING AMBIENT TEMPERATURE: -65C to +175C. STORAGE TEMPERATURE: -65 to +200C, 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein: SPECIFICATION MILITARY MIL-$-19500 - Semiconductor Devices, General Specification for. FSC-5961MIL SPECS T ffogoo1es 0013670 & a MIL-S-19500/436 (USAF) STANDARD MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer.) 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500, and as follows: Q-------- Quality factor (ratio of reactance to effective resistance). Conccree- Case Capacitance TC, ercce- Temperature coefficient of capacitance. Ly weeeeee Series inductance. 3.3 Design, construction, and physical dimensions. Diodes shall be of the design, construction, and physical dimensions specified on figure 1. 3.3.1 Lead finish. Leads shall be tinned or gold plated and maybe speci- fied in the contract or order (see 6.2) without affecting the qualified product status of the device, or applicable JAN marking. 3.3.1.1 Lead material. If lead material need be specified, it shall be specified in the contract or order (see 6.2). 3.4 Performance characteristics. Performance characteristics shall be as specified in tables I, II, and III. 3.4.1 Process-conditioning, testing, and screening for 'TX!' types. Process- conditioning, testing, and screening for the "TX" types shall be as specified in 4.5. 3.5 Marking. The following marking specified in MIL-STD-19500 may be omitted at the option of the manufacturer: (a) Manufacturer's identification. (b) Country of origin.MIL SPECS Ic oooo1es OO135b71 & i MIL-S-19500/436 (USAF) 3.5.1 Type designation. It is permissible to have the type designation on more than one line; however, if this is done, the break in the type number shall be as follows: 3.5.2 "TX" marking. Devices in accordance with the "TX" requirements shall be marked with a "TX" immediately following the "JAN" or "J" prefix. 3.5.3 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. (No color coding shall be permitted.) 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accore dance with MIL-S-19500, and as specified herein. 4,2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables I, II, and III. Qualification for a particular group of capacitances requires the testing of the lowest- and highest-nominal-capacitance units in the group. The manufacturer has the option of submitting samples individually to subgroups 5 and 6 of group B and subgroups 5 and 6 of Group C inspection or of submitting to the tight- ened combination of these tests, using a sample size under the LTPD = 5 column and a test duration of 1,000 hours. The number of specimens to be inspected in the group, the determination of defectives, and the number of defectives shall be as specified in the qualifi- cation inspection procedure of MIL-S-19500 with the exception that the inspec- tion routine for structurally similar devices does not apply. Ten samples of all other types shall be subjected to subgroup 2 of group A inspection and subgroup 2 of group C inspection. 4.2.1 Qualification testing. The non-TX types shall be used for quali- fication testing. At the manufacturer's request to the qualifying activity, qualification will be extended to include the "TX" type of the device. 4,3 Quality conformance inspection. Quality conformance inspection shall consist of the examinations and tests specified in groups A, B, and C. Group A inspection and subgroup 2 of group C inspection shall be performed on a sub- lot basis. Group B inspection (with the exception of subgroups 6 and 7) and subgroup 1 of group C shall be performed on a lot basis in accordance with MIL-S-19500. Subgroups 5 and 6 of group B and subgroups 5 and 6 of group C inspection shall be performed on a lot basis with 50 percent of the sample being the highest capacitance type present in the lot and 50 percent of the sample being the highest-volume type present in the lot. Subsequent accept- ance of capacitance types which are higher capacitance than those previously subjected to 1,000-hours life testing within the current six-month period (see 4.3.4.) requires retesting of subgroups 5 and 6 of group C inspection for a lot which includes the higher capacitance type. (Provisions of MIL-S-19500 early-acceptance procedures do not apply to this specification.) 3MIL SPECS T Poooo12s 0023672 7 I MIL-S-19500/436 (USAF) 4.3.1 Inspection lot. Inspection lot shall be defined in MIL-S-19500 except that the lot accumulation period requirements shall be 6 months in lieu of 6 weeks. Manufacturers who employ two or more processes shall establish a new inspection lot for each process. 4.3.2 Group A inspection. Group A inspection shall consist of examinations and tests specified in table I. 4.3.3 Group B inspection. Group B inspection shall consist of the exami- nations and tests specified in table II. 4.3.4 Group C inspection. Group C inspection shall consist of the exami- nations and tests specified in table III. This inspection shall be conducted on the initial lot and thereafter every 6 months during production. 4.3.4.1 Group C life-test samples. Samples that have been subjected to subgroup 6, group B, 500-hour life test may be continued on test for 1,000- hours in order to satisfy group C life-test requirements, These samples shall be predesignated and shall remain subject to the group C 1,000-hour acceptance evaluation after they have passed the group B 500-hour accept- ance criteria. The cumulative total of failures found during the 500-hour test and during the subsequent interval up to 1,000-hours shall be computed for the 1,000-hour acceptance criteria. 4.4 Methods of examination and test. Methods of examination and test shall be as specified in tables I, II, and III, the referenced methods of MIL-STD-750 and the figures herein. Section 4 of MIL-STD-750 is applicable. 4.4.1 Terminal strength and salt atmosphere. Electrical rejects or structurally similar devices may be used for subgroup 4 of group B inspection and subgroup 1 of group C inspection. 4.4.2 Temperature coefficient of capacitance. Throughout the temperature range specified the capacitance shall not change by more than the amount speci- fied relative to the capacitance value measured at T, = 25C. The temperature coefficient of capacitance may be computed by the fotlowing formula: = 65? 6 TC, Cy (+85 C) C. (-65 C) x 10 85 + 65 C, (25C) (Accuracy is limited by the Cp measurement to + 0.1 pF.)MIL SPECS 1 Joooo1es 0013673 hl I MIL-S-19500/436 (USAF) 4.4.3 Case, Capacitance, C_, is measured on an open package at 1.0 MHz using a capacitance bridge, Bodnton Electronics Model 75A or equivalent. , 4.4.4 Series inductance, Ls is measured on a shorted package at 250 MHz using an impedance bridge, Boonton Radio Model 250A RX Meter or equivalent. 4.4.5 Resistance to.solvents. Diodes shall be subjected to tests in accordance with Method 215 of MIL-STD-202. The following details shall apply: (a) All areas of the diode body where marking has been applied shall be brushed, (b) After subjection to the tests, there shall be no evidence of mechanical damage to the device and markings shall have remained legible. 4.5 Process-conditioning, testing, and screening for "IX" types. The procedure for process-conditioning, testing, and screening the "TX" types shall be in accordance with 4.5.1 through 4.5.7.3 and figure 2. The process-conditioning shall be conducted on 100 percent of the lot, prior to submission of the lot to the tests specified in tables I, II, and III. (At the option of the manufacturer, the non "TX" types may be subjected to process-conditioning and testing.) 4.5.1 Quality assurance (lot verification). Quality assurance shall keep lot records, monitor for compliance to the prescribed procedures, and observe that satisfactory manufacturing conditions and records on lots are maintained for these dvices, The records shall be available for review by the customer at all times. The quality assurance monitoring shall include, but not be limited to: process-conditioning, testing, and screen- ing. (The conditioning and screening tests performed as standard production tests need not be repeated when these are acceptable to the Government beforehand as being equal to or more severe than specified herein and the relative process-conditioning sequence is maintained.) 4.5.2 High-temperature storage. All devices shall be stored for at lease 48 hours at a minimum temperature (T,) of 200C. 4.5.3 Thermal shock (temperature cycling). All devices shall be sub- jected to thermal shock (temperature cycling) and shall be performed in accordance with MIL-STD-750, method 1051, test condition C, except that 10 cycles shall be continuously performed and the time at the temperature extremes shall be in 15 minutes.MIL SPECS I Pooon1es Oo13b74 3 [ MIL-S-19500/436 (USAF) 4.5.4 Acceleration. All devices shall be subjected to acceleration test in accordance with MIL-STD-750, method 2006, with the following exceptions: The test shall be performed one time in the Y, orientation only, at a peak level of 20,000 G, minimum. The 1-minute hoid-time requirement shall not apply. 4.5.5 Hermetic seal (fine leak) test. All devices shall be fine-leak tested in accordance with MIL-STD-750, method 1071, test condition G or H. 4.5.6 Hermetic seal (gross-leak) test. All devices shall be tested for gross-leaks in accordance with MIL-STD-750, method 1071, test condition D or E.MIL SPECS Ic Booco1es O013b75 5 I b MIL-S-19500/436 (USAF) b L oe se whe 8 VARIATIONS N M 0 B INCHES MILLIMETERS re L | MIN MAX MIN max | @b| .018 022 46 56 @D} .078 .107 1.98 2.72 | 2 G | .195 300 4.95 7.62 | 2 ~t | 1.000 | 1.500 | 25.40 | 38.10 ly] --- 050 o-- 1.27 | 3 NOTES: 1. Refer to rules for dimensioning semiconductor product outlines included in Publication No e 76. 2. Package contour optional within @D and length G, if any, shall be included within this cylinder but shall not be subject to the minimum limit of @D. 3. Lead diameter not controlled in zones L, to allow for flash lead finish build-up and minor irregularities other than heat slugs. Heat slugs, Figure 1. Semiconductor Device, diode, silicon, voltage regulator types TX and non-TX types 1N5518B thru 1N5546B. (DO-7). 7MIL SPECS MIL-S-19600/436 (USAF) I Jooo0125 o013b7b 7 7 TABLE I. Group A inspection MIL-STD-750 LTPD Limits Examination or Test on Method Details Tx {2X (Symbol) Min Max Unit Subgroup 1 10; 5 Visual and mechanical] 2071 --- --+ --- w--- examination Subgroup 2 745 Breakdown voltage 4021 I, = 10 pAdc BY, 30 ooo Vde Reverse current 4016 {DC method; VR = 25 Vde IR oe 20 nAdc Reverse current 4016 |DC method; V, = 25 Vde I --- 20 pAdc o R R T = 150C A Subgroup 3 7/5 Capacitance 4001 Vaz4 Vdes f = 1 MHz c Col.3 | ol.4 pf table | table IV Iv | Capacitance ratio 4001 |From V, = 2 Vde to --- [Col.5 }] Col.6|] --- VR = 3B Vde; = 1 MHz table table IV IV Quality factor 4036 VR = 4 Vdc; Q Col.7 | --- __. = 50 MHz table IV Case, capacitance f = 1.0 MHz C. 0.1 0.35 pf Lead length 1/86 inch (See 4.4.3) Series, inductance f = 250 MHz Le 3.0 8.0 mH Lead length 1/16 inch (See 4.4.4)MIL SPECS Ic Boooo1es OO13b77 4 a MIL-S-19500/436 (USAF) TABLE II. Group B inspection MIL-STD-750 LTPD Limits Examination or Test on Method Details TX {TX jSymbol] Min Max Unit Subgroup 1 15115 Physical dimensions 2066 | (See figure 1) wee J eee -+- --- Subgroup 2 10 |10 Solderability 2026 --- wee 2+ --- Thermal shock 1051 | Test condition C; --- --- --- --- (temperature cycling) T (high) = 175C 10 cycles Thermal shock | 1056 |Test condition A --- --- --- --- (glass strain) Terminal strength 2036 | Test condition A; oe eee ore --- (tension) 4 lbs; t = 15 sec. Hermetic seal 1071 | Test cond. "G or H" eee fee --- -- for fine leaks; Test cond. "E' for gross leaks End points: Reverse current 4016 | DC method; V = 25 Vde IR woo 20 nAdc Capacitance 4001 VR = 4 Vde c Go1l.3 | Col.4} pf f= 1 MHz table table e IV IV Subgroup 3 10) 10 Shock (nonoperating) 2016 | 1500 G; 0.5 msec: --- o-- -e-- wee 5 blows in each orientation: Xi Y and Y 2 Vibration, variable 2056 | Nonoperating o-- w-- --- oe frequencyMIL SPECS MIL-S-19500/436(USAF) Ic ocoo1es 0013678 0 a TABLE II. Group B inspection - Continued MIL-STD-750 LTIPD Limits Examination or Test Non Method Details TX {TX |Symbol |Min Max Unit Subgroup 3 - Cont'd. Constant acceleration | 2006 {20,000 G, in Xp Yy> one --- --- --- and Yo orientations End points: (Same as subgroup 2) Subgroup 4 10 [10 Terminal strength 2036 |Test cond. E --- --- wee --- (lead fatigue) (See 4.4.1) Subgroup 5 10 |7 High-temperature life | 1032 T, = 200C; --- |--- --- --- (nonoperating) t= 500 hours End points: (Same as subgroup 2) Subgroup 6 10/7 Steady-state operation| 1027 VR = 25 Vde eee feo --- --- life T, = +150C t= 500 hours (See 4.3.4.1) End points: (Same as subgroup 2) 10MIL SP ECS Ic Gfccoo1es 0013679 2 | MIL-S-19500/436 (USAF) TABLE III. Group C inspection MIL-STD-750 LTPD Limits Examination or Test . Non! Method! Details TX ITX [Symbol | Min Max Unit Subgroup 1 10 flO Salt atmosphere 1041 }] (See 4.4.1) o-- --- --- --- Subgroup 2 10 #0 Temperature coeffi- --- |T = -65C to +85C TC, --- 0.04 | %/C cient of capaci- ve = 4 Vde tance (see 4,4,2) Subgroup 3 10 f10 Thermal shock 1051 [Test cond. C-1; --- vee --- ooo (temperature cycling) T(high) = 175 C time at temperature extremes=15 minutes min, total test time= 72 hours (maximum) End points: (Same as subgroup 3) Subgroup 4 10 }10 Resistance to solvents MIL-STD-202, Method --- one oo --- 215 (See 4.4.5) Subgroup 5 A= fhe 10} 7 High-temperature life | 1031 |T, = 200C --- [--- --- --- (nonoperat ing) End points: Reverse current 4016 | DC method; I, --- 20 nAdc V, = 25 Vde R Capacitance 4001 | V = 4 Vde; c Col.3] Col.4| pf = 1 MHz table | table IV IV Subgroup 6 AKL Az 10] 7 Steady-state opera- 1026 Vanzsvde --- [--- w= ane tion life T,=150C End points: (See 4.3.4.1) (Same as subgroup 5) LiMIL SPECS Ic Boooo1es OO13ba0 4 I MIL-S-19500/436(USAF) TABLE IV Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Capacitance Capacitance ratio Q Type Va = 4 Vde From Vp =2Vdc Vp = 4Vde To Vp, =30 Vde =50 MHz Nom. Min. Max. Min. Max. Min. pt pi pt INS461E 6.8 6.46 7034 2.7 3.1 660 1N54623 8.2 7.79 8.62 2.8 3.1 600 1N5463B 10.0 9.95 10.5 2.8 3.2 550 IN54643 12.0 11.4 12,6 2.8 3.1 550 1N5465B 5.0 14.35 15.75 2.8 3.2 550 1N5466B 18.0 17.1 18.9 2.9 3.1 500 1N5467B 20.9 19.0 21.0 2.9 361 500 1N5468B 22,0 20.9 23.1 f 29 3.2 500 1N5469B 27.0 25.65 28.35 2.9 3.2 500 1N5470B 33.0 31.35 34.65 2.9 3.2 500 1N5471B 39.0 37.05 40.95 2-9 3-4 450 1NS472B 47.0 44.65 49.35 2.9 3.2 400 1N5473B 56.0 53.2 58.8 2.9 3.3 300 1N5474B 68.0 64.6 72.4 2.9 3.3 250 1N5475B 82.0 77.9 86.1 2.9. 3.3 225 1N5476B 100.0 95.0 105.0 2.9 3.3 200 12MIL SPECS IC coco1es 0013681 0 i MIL-S-19500/436(USAF) 4.5.7 Preburn-in tests. The parameter I, of table V shall be measured and the data recorded for all devices in the lot. All devices shall be handled or identified such that the delta end points can be determined after the burn-in test. All devices which fail to meet these require- ments initially will be removed from the inspection lot and the quantity removed noted on the lot history. TABLE V. Burn-in test measurements I i MIL-STD~750 Limits | Examination or test Symbol Unit Method Details Min Max DC method; I ~-- | 20 | ndde | | Reverse current 4016 Vp 725 Vde R ~ t 4.5.7.1 Burn-in test. All devices shall be operated for 96 hours min- imum under the following conditions: + 150C 25 Vde Ts VR 4.5.7.2 Post burn-in tests. The parameter I, of table V shall be retested after burn-in and the data recorded for all devices in the lot. The parameter measured shall not have changed during the burn-in test from the initial value by more than the specified amount as follows: AI, = 100% or 10 nanoamperes, whichever is greater 4.5.7.3 Burn-in test failure (screening). All devices that exceed the delta (A) limit of 4.5.7.2 or the limit of table V after burn-in, shall be removed from the inspection lot and the quantity removed shall be noted on the lot history. Where the quantity removed after burn-in exceeds 10 percent of the total inspection lot on burn-in test, the entire lot shall be unacceptable as "TX" types. 13*padhy KLNVE puu (X.L-UON) NYE 40) Weide~p oanpacoad jo seprQ = Z BUNA I Jfooo0125 oo1anaa 2 Tt MIL SPECS MIL-S-19500/436 (USAF) 14 XINVE AIAG a0J NMOS SV GUWUOIESd Ad TIVHS SHOOT AHL NI SLSAL AL AQ USMUO voyjvailoig yaofas 20 yaoou yoy 10; td 3 pue *g y sdnory 4S9) U-Usng WoT ByI9far JO moyay WO PIgq t]419z]419 VOPIIIaA YoU. *y G89) [UIs DJaWAa)f .y T APaAfas AIYIO puc YIP oupusszayzap 07 uo}JZaapeIIy E 2 dnouy siajquLsed payyaods yo qoulssnsvay gq dnosp (Suyyaho oanjesadway) y dnoip uj-uAng YIoys [eusayy, Z GdL'l Gaszauvard payjyoeds Jo yuoUlaInsayy T 93r30)8 aanjqusadwa) YI oT Aj[AAA 07 6399 . uoy720dsuy eAUPVOT}TPUOD L9MOG JUIIIIG OO . sSJUJUCTIPUOD GSII0Ig JW9II0g OOT . nd ~ ; gaily, XLNVP 40} pesodosg syry : ypafaz 20 19 dn0ig - Suysgos0ad .NvE qdaaav a0j . a dnosy (X.L-v0N) (Aajyye-19) faoy~usg zs 1001[9G yw BIT O puv { vy dnoip _ aadAL uoyussdg Ajquuasey yeysayew wry *T 10] g vy sdnoag Cd. Ajjaaa 0} | : NV& 203 jeupZ 1ta7zye pourtog RIYVIEdAIG 30 mayAoy 87Sa, uoy)IadBu] pesadoig 90] 9jO'T uOs}IOdsuy bsa30I1g uayjanporgMIL SPECS Ic Boccoo1es QO13b6845 4 i MIL-S-19500/436( USAF) 5. PREPARATION FOR DELIVERY 5.1 Preparation for delivery. Preparation for delivery shall be in accordance with MIL-S-19500. 6. NOTES 6.1 The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Ordering data. Procurement documents should specify the following: (a) Lead finish if other than gold-plated (see 3.3.1). (b) Lead material (see 3.3.1.1). (c) Inspection data (see 4.3). Custodian: Preparing activity: Air Force - 17 Air Force - 17 Review activities: (project 5961-F306) Air Force - 11, 70, 80, User activities: Air Force - 19 xU.S. GOVERNMENT PRINTING OFFICE: 1970-433-691/ 8390 15