2N3418U4 thru 2N3421U4 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The U4 package is hermetically sealed and provides a low profile for minimizing board height. These devices are also available in TO-5 and TO-39 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES U4 Package * JEDEC registered 2N3418U4 through 2N3421U4 series. * RoHS compliant versions available (commercial grade only). * Vce(sat) = 0.25 V @ Ic = 1 A * Rise time t r = 0.22 s max @ I C = 1.0 A, I B1 = 100 mA * Fall time t f = 0.20 s max @ I C = 1.0 A, I B2 = -100 mA Also available in: TO-5 package (leaded) 2N3418 - 2N3421 APPLICATIONS / BENEFITS TO-39 package * General purpose transistors for medium power applications requiring high frequency switching and low package profile. * Military and other high-reliability applications. (short leaded) 2N3418S - 2N3421S MAXIMUM RATINGS Symbol 2N3418U4 2N3420U4 2N3419U4 2N3421U4 Unit Collector-Emitter Voltage V CEO 60 80 V Collector-Base Voltage V CBO 85 125 V Emitter-Base Voltage V EBO 8 V IC 3 5 A PD 1 15 W TJ , Tstg -65 to +200 C Parameters / Test Conditions Collector Current Total Power Dissipation (1) @ TA = +25C (2) @ TC = +100C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly 5.72 mW/C for TA > +25 C. 2. Derate linearly 150 mW/C for TC > +100 C. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0192-2, Rev. 1 (111618) (c)2011 Microsemi Corporation Page 1 of 6 2N3418U4 thru 2N3421U4 MECHANICAL and PACKAGING * * * * * * * CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid. TERMINALS: Gold over nickel plated surface mount terminations MARKING: Part number, Date Code, Manufacturer's ID POLARITY: See package dimensions TAPE & REEL option: Standard per EIA-481D. WEIGHT: .125 grams (125 milligrams). See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3418 U4 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Package type U4 = surface mount JEDEC type number (see Electrical Characteristics table) Symbol SYMBOLS & DEFINITIONS Definition common-base open-circuit output capacitance C obo I CEO I CEX I EBO h FE collector cutoff current, base open collector cutoff current, circuit between base and emitter emitter cutoff current, collector open common-emitter static forward current transfer ratio TA V CEO V CBO V EBO ambient temperature, free-air temperature collector-emitter voltage, base open collector-emitter voltage, emitter open emitter-base voltage, collector open LDS-0192-2, Rev. 1 (111618) (c)2011 Microsemi Corporation Page 2 of 6 2N3418U4 thru 2N3421U4 ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Current I C = 50 mA, I B = 0 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 Collector-Emitter Cutoff Current V BE = -0.5 V, V CE = 80 V 2N3418U4, 2N3420U4 V BE = -0.5 V, V CE = 120 V 2N3419U4, 2N3421U4 Collector-Base Cutoff Current V CE = 45 V, I B = 0 V CE = 60 V, I B = 0 Emitter-Base Cutoff Current V EB = 6.0 V, I C = 0 V EB = 8.0 V, I C = 0 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 Symbol Min. V (BR)CEO 60 80 Max. Unit V I CEX 0.3 0.3 A I CEO 5.0 5.0 A I EBO 0.5 10 A Max. Unit ON CHARACTERISTICS (2) Parameters / Test Conditions Forward-Current Transfer Ratio I C = 100 mA, V CE = 2.0 V I C = 1.0 A, V CE = 2.0 V I C = 2.0 A, V CE = 2.0 V Symbol 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 Min. 20 40 h FE 20 40 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 15 30 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 Collector-Emitter Saturation Voltage I C = 1.0 A, I B = 0.1 A I C = 2.0 A, I B = 0.2 A Base-Emitter Saturation Voltage I C = 1.0 A, I B = 0.1 A I C = 2.0 A, I B = 0.2 A 10 15 I C = 5.0 A, V CE = 5.0 V DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio I C = 0.1 A, V CE = 10 V, f = 20 MHz Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1.0 MHz LDS-0192-2, Rev. 1 (111618) V CE(sat) 60 120 0.25 0.5 V V BE(sat) 0.6 0.7 1.2 1.4 V Symbol Min. Max. Unit |h fe | 1.3 0.8 C obo (c)2011 Microsemi Corporation 150 pF Page 3 of 6 2N3418U4 thru 2N3421U4 ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise noted) continued SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Delay Time V BE(off) = -3.7 V, Rise Time I C = 1.0 A, I B1 = 100 mA Storage Time V BE(off) = -3.7 V, Fall Time I C = 1.0 A, I B2 = -100 mA Turn-Off Time V BE(off) = -3.7 V, I C = 1.0 A, I B2 = -100 mA, RL = 20 SAFE OPERATING AREA DC Test T C = 100 C, 1 cycle, t = 1.0 s Test 1 V CE = 5.0 V, I C = 3.0 A Test 2 V CE = 37 V, I C = 0.4 A Test 3 V CE = 60 V, I C = 0.185 A V CE = 80 V, I C = 0.12 A Clamped Switching NOTES: Min. Max. td tr ts tf 0.08 0.22 1.10 0.20 t off 1.20 Unit s s s 2N3418U4, 2N3420U4 2N3419U4, 2N3421U4 T A = 25C, I B = 0.5 A, I C = 3.0 A (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% LDS-0192-2, Rev. 1 (111618) (c)2011 Microsemi Corporation Page 4 of 6 2N3418U4 thru 2N3421U4 DC Operation Maximum Rating (W) GRAPHS o TC ( C) (Case) FIGURE 1 Temperature-Power Derating Curve o THETA (oC/W) NOTES: Thermal Resistance Junction to Case = 4.5 C/W o Max Finish-Alloy Temp = 175 C TIME (s) FIGURE 2 Maximum Thermal Impedance NOTE: T C = +25 C, Thermal Resistance R JC = 4.5 C/W LDS-0192-2, Rev. 1 (111618) (c)2011 Microsemi Corporation Page 5 of 6 2N3418U4 thru 2N3421U4 PACKAGE DIMENSIONS NOTES: 1. 2. 3. Dimensions are in inches. Millimeter equivalents are given for general information only. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. LDS-0192-2, Rev. 1 (111618) Ltr Inches Dimensions Millimeters Min Max Min Max BL BW CH LH LW1 LW2 LL1 0.215 0.145 0.049 5.46 3.68 1.24 0.135 0.047 0.085 0.225 0.155 0.075 0.020 0.145 0.057 0.125 3.43 1.19 2.16 5.72 3.94 1.91 0.51 3.68 1.45 3.17 LL2 0.045 0.075 1.14 1.91 LS1 0.070 0.095 1.78 2.41 LS2 0.035 0.048 0.89 1.21 Q1 Q2 TERMINAL 0.030 0.020 0.070 0.035 0.76 0.51 1.78 0.89 1 2 COLLECTOR BASE 3 EMITTER (c)2011 Microsemi Corporation Page 6 of 6