DATA SH EET
Product specification
Supersedes data of 1999 May 11 2001 Oct 15
DISCRETE SEMICONDUCTORS
BAV99
High-speed double diode
b
ook, halfpage
M3D088
2001 Oct 15 2
Philips Semiconductors Product specification
High-speed double diode BAV99
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The BAV99 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
MARKING
Note
1. ∗= p: Made in Hong Kong.
∗= t: Made in Malaysia.
∗= W: Made in China.
PINNING
TYPE NUMBER MARKING
CODE(1)
BAV99 A7∗
PIN DESCRIPTION
1 anode
2 cathode
3 common connection
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM232
12
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current single diode loaded; see Fig.2;
note 1 −215 mA
double diode loaded; see Fig.2;
note 1 −125 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2001 Oct 15 3
Philips Semiconductors Product specification
High-speed double diode BAV99
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF= 1 mA 715 mV
IF= 10 mA 855 mV
IF=50mA 1 V
I
F= 150 mA 1.25 V
IRreverse current see Fig.5
VR=25V 30 nA
V
R=75V 1 µA
V
R= 25 V; Tj= 150 °C30 µA
V
R
= 75 V; Tj= 150 °C50 µA
C
ddiode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured
at IR= 1 mA; see Fig.7
4ns
V
fr forward recovery voltage when switched from IF= 10 mA;
tr= 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2001 Oct 15 4
Philips Semiconductors Product specification
High-speed double diode BAV99
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
2001 Oct 15 5
Philips Semiconductors Product specification
High-speed double diode BAV99
Fig.5 Reverse current as a function of junction
temperature.
105
104
10 200
0
MGA884
100 T ( C)
jo
IR
(nA)
103
102
75 V
25 V
typ
max
V = 75 V
R
typ
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
2001 Oct 15 6
Philips Semiconductors Product specification
High-speed double diode BAV99
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) IR= 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
2001 Oct 15 7
Philips Semiconductors Product specification
High-speed double diode BAV99
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2001 Oct 15 8
Philips Semiconductors Product specification
High-speed double diode BAV99
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 15 9
Philips Semiconductors Product specification
High-speed double diode BAV99
NOTES
2001 Oct 15 10
Philips Semiconductors Product specification
High-speed double diode BAV99
NOTES
2001 Oct 15 11
Philips Semiconductors Product specification
High-speed double diode BAV99
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/04/pp12 Date of release: 2001 Oct 15 Document order number: 9397 750 08767
