RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 400 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
TVS
P4FMAJ
SERIES
DO-214AC
400 WATT PEAK POWER 1.0 WATT STEADY STATE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
DEVICES FOR BIPOLAR APPLICA TIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400
Electrical characteristics apply in both direction
2002-12
Ratings at 25 oC ambient temperature unless otherwise specified.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V
F
= 3.0V max. for devices of V(
BR
) < 200V and V
F
= 5.0V max. for devices of V(
BR
) > 200V.
RATINGS
Steady State Power Dissipation at T
L
= 75
o
C ( Note 2 )
Peak Pulse Current with a 10/1000uS waveform
( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 25A for
SYMBOL
I
FSM
V
F
T
J
, T
STG
Volts
-55 to + 150
0
C
UNITS
unidirectional only ( Note 4 )
Amps
Peak Power Dissipation at T
A
= 25
oC
, T
P
= 1mS ( Note 1 ) Minimum 400
40
3.5/6.5
VALUE
Operating and Storage Temperature Range
P
PPM
Watts
I
PPM
AmpsSEE TABLE 1
Peak Forward Surge Current, 8.3mS single half sine wave-
superimposed on rated load ( JEDEC METHOD ) ( Note 3 )
P
M
(
AV
) 1.0 Watts
NOTES :
2. Mounted on 0.2 X 0.2” (5.0 X 5.0mm) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)