K4E171611C, K4E151611C CMOS DRAMK4E171612C, K4E151612C
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter Symbol Min Max Units
Input capacitance [A0 ~ A11] CIN1 -5pF
Input capacitance [RAS, UCAS, LCAS, W, OE]CIN2 -7pF
Output capacitance [DQ0 - DQ15] CDQ -7pF
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Parameter Symbol -45 -50-60Units Notes
Min Max Min Max Min Max
Random read or write cycle time tRC 79 84 104 ns
Read-modify-write cycle time tRWC 105 115 140 ns
Access time from RAS tRAC 45 50 60 ns 3,4,10
Access time from CAS tCAC 14 15 17 ns 3,4,5
Access time from column address tAA 23/*20 25 30 ns 3,10
CAS to output in Low-Z tCLZ 3 3 3 ns 3
Output buffer turn-off delay from CAS tCEZ 3 13 3 13 3 15 ns 6,19
OE to output in Low-Z tOLZ 3 3 3 ns 3
Transition time (rise and fall) tT2 50 2 50 2 50 ns 2
RAS precharge time tRP 30 30 40 ns
RAS pulse width tRAS 45 10K 50 10K 60 10K ns
RAS hold time tRSH 13 13 17 ns
CAS hold time tCSH 36 40 50 ns
CAS pulse width tCAS 7 / *6.5 10K 810K 10 10K ns 18
RAS to CAS delay time tRCD 19 31 20 35 20 43 ns 4
RAS to column address delay time tRAD 14 22 15 25 15 30 ns 10
CAS to RAS precharge time tCRP 5 5 5 ns
Row address set-up time tASR 0 0 0 ns
Row address hold time tRAH 9 10 10 ns
Column address set-up time tASC 0 0 0 ns 11
Column address hold time tCAH 7 8 10 ns 11
Column address to RAS lead time tRAL 23 25 30 ns
Read command set-up time tRCS 0 0 0 ns
Read command hold time referenced to CAS tRCH 0 0 0 ns 8
Read command hold time referenced to RAS tRRH 0 0 0 ns 8
Write command hold time tWCH 8 10 10 ns
Write command pulse width tWP 8 10 10 ns
Write command to RAS lead time tRWL 10 13 15 ns
Write command to CAS lead time tCWL 7 8 10 ns 14
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
* KM416C1204CT-45 (5V, 1K Refresh) only