APTGT150SK120D1G
APTGT150SK120D1G – Rev 2 December, 2009
www.microsemi.com 1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 220
IC Continuous Collector Current TC = 80°C 150
ICM Pulsed Collector Current TC = 25°C 300
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 690 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 300A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
1
5
Q1 3
4
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M5 power connectors
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Buck chopper
Trench + Field Stop IGBT
Power Module
APTGT150SK120D1G
APTGT150SK120D1G – Rev 2 December, 2009
www.microsemi.com 2-4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA
Tj = 25°C 1.7 2.1
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 150A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 6 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 10.8
Coes Output Capacitance 0.56
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.5
nF
QG Gate charge VGE=±15V, IC=150A
VCE=600V 1.4 µC
Td(on) Turn-on Delay Time 250
Tr Rise Time 90
Td(off) Turn-off Delay Time 550
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω 130
ns
Td(on) Turn-on Delay Time 300
Tr Rise Time 100
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω 180
ns
Eon Turn on Energy Tj = 125°C 11
Eoff Turn off Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω Tj = 125°C 26
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C 600 A
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA
IF DC Forward current Tc = 80°C 150 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 150A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 250
trr Reverse Recovery Time Tj = 125°C 350 ns
Tj = 25°C 15
Qrr Reverse Recovery Charge Tj = 125°C 29 µC
Tj = 25°C 7
Err Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =3000A/µs
Tj = 125°C 12 mJ
APTGT150SK120D1G
APTGT150SK120D1G – Rev 2 December, 2009
www.microsemi.com 3-4
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.18
RthJC Junction to Case Thermal Resistance Diode 0.34 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
For terminals M5 2 3.5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 180 g
D1 Package outline (dimensions in mm)
Typical Performance Curve
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
10 50 90 130 170 210
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
Operating Frequen cy vs Collector Curren
t
Maximum Effective Transien t Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APTGT150SK120D1G
APTGT150SK120D1G – Rev 2 December, 2009
www.microsemi.com 4-4
Output Characteristics (V
GE
=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
01234
V
CE
(V)
I
C
(A)
Output Char acteristics
VGE=15V
VGE=13V
VGE=17V
VGE=9V
0
50
100
150
200
250
300
01234
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
56789101112
V
GE
(V)
I
C
(A)
Energy losses vs Collector Current
Eon
Eon
Eoff
Err
0
10
20
30
40
50
60
0 50 100 150 200 250 300
I
C
(A)
E (mJ)
V
CE
= 600V
V
GE
= 15V
R
G
= 4.7 Ω
T
J
= 125°C
Eon
Eon
Eoff
Err
0
10
20
30
40
50
4 8 12 16 20 24 28 32
Gate Resistance (ohms)
E (mJ)
V
CE
= 600V
V
GE
=15V
I
C
= 150A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
50
100
150
200
250
300
350
0 400 800 1200 1600
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=4.7 Ω
Maxi mum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duratio n
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
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